摘要:
The present disclosure generally pertains to systems and methods for cancelling crosstalk. A multiple input, multiple output (MIMO) system in accordance with one exemplary embodiment of the present disclosure has a plurality of receivers, which are capable of exchanging information with one another. Each receiver is coupled to a respective subscriber line and receives signals from a remote transmitter. In each path of the MIMO system, in domain crosstalk and possibly some combination of noise, alien crosstalk, and/or other interference such as RF interference, is canceled from the signal being processed. In some cases, a cancellation signal for cancelling crosstalk is based on an output of a symbol decision element, such as a slicer or decoder, thereby improving the accuracy of the cancellation signal.
摘要:
The invention provides compositions for blow molding applications and other applications, where such compositions comprise a high molecular weight ethylene interpolymer and a low molecular weight ethylene polymer, and where the high molecular weight ethylene interpolymer has a density from 0.920 g/cm3 to 0.950 g/cm3, and an I21 from 0.05 to 1 dg/min, and where the low molecular weight ethylene polymer has density from 0.965 g/cm3 to 0.985 g/cm3, and an I2 from 600 to 2000 dg/min. The composition has a density from 0.950 g/cm3 to 0.970 g/cm3, and comprises greater from 45 to 80 weight percent of the high molecular component, and from 20 to 55 weight percent of the low molecular weight component, based on the sum weight of the high molecular weight component and the low molecular weight component. The invention also provides for methods of preparing said compositions and for articles prepared from the same.
摘要翻译:本发明提供用于吹塑应用和其它应用的组合物,其中这种组合物包含高分子量乙烯互聚物和低分子量乙烯聚合物,并且其中高分子量乙烯互聚物的密度为0.920g / cm 3至0.950g / cm3,I21为0.05〜1dg / min,低分子量乙烯聚合物的密度为0.965g / cm 3〜0.985g / cm 3,I2为600〜2000dg / min。 该组合物的密度为0.950g / cm 3至0.970g / cm 3,并且包含较高分子组分的45至80重量%和低分子量组分的20至55重量%,基于总重量 的高分子量组分和低分子量组分。 本发明还提供了制备所述组合物和由其制备的制品的方法。
摘要:
Various degradation features are disclosed for a remotely controlled vehicle. Translatable body components are disclosed for simulating damage to a vehicle. Impact sensors may be provided for detecting an impact to the vehicle and modifying operation of the vehicle in response to an impact. A timer may be provided for hampering operations of the vehicle as a function of time for simulating real life conditions. Controls, and methods associated with these features are disclosed as well as games for utilizing the degradation features.
摘要:
A method for making a semiconductor structure (10) includes providing a wafer with a structure (16) having a sidewall, forming a sidewall spacer (22) adjacent to the sidewall, and forming a layer of material (28) over the wafer including over the sidewall spacer and over the structure having the sidewall. The method further includes etching the layer, wherein the etching (i) leaves at least portions of the sidewall spacer exposed and (ii) leaves a portion of the layer located over the structure having a sidewall. The portion of the layer located over the structure having a sidewall is reduced in thickness by the etching. Subsequent to etching the layer, the method includes removing the sidewall spacer.
摘要:
Various degradation features are disclosed for a remotely controlled vehicle. Translatable body components are disclosed for simulating damage to a vehicle. Impact sensors may be provided for detecting an impact to the vehicle and modifying operation of the vehicle in response to an impact. A timer may be provided for hampering operations of the vehicle as a function of time for simulating real life conditions. Controls, and methods associated with these features are disclosed as well as games for utilizing the degradation features.
摘要:
A process of forming an electronic device can include patterning a semiconductor layer to define an opening extending to an insulating layer, wherein the insulating layer lies between a substrate and the semiconductor layer. After patterning a semiconductor layer, the semiconductor layer can have a sidewall and a surface, the surface can be spaced apart from the insulating layer, and the sidewall can extend from the surface towards the insulating layer. The process can also include chemical vapor depositing a first layer adjacent to the sidewall, wherein the first layer lies within the opening and adjacent to the sidewall, and is spaced apart from the surface. Chemical vapor depositing the first layer can be performed using an inductively coupled plasma.
摘要:
A system for adaptively updating precoder taps comprises a first signal path, a second signal path, a delay mechanism, and logic. The first signal path is configured to receive encoded signals. The first signal path has a decoder that is configured to decode the encoded signals thereby recovering data originally transmitted from a remote transmitter. The delay mechanism is configured to receive and delay the encoded signals. The second signal path is connected in parallel with the first signal path and is configured to receive the encoded signals delayed by the delay mechanism. The second signal path has an adaptive filter configured to filter the encoded signals received by the second signal path based on a set of coefficients of the adaptive filter. The adaptive filter is configured to adaptively update the coefficients based on the data recovered by the first signal path. The logic is configured to adaptively generate new precoder taps based on the coefficients and to transmit the new precoder taps to a precoder.
摘要:
A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.
摘要:
A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.
摘要:
A pitch gain of the adaptive codebook portion of a vocoder's encoder is monitored to determine when an instability condition is about to occur by examining a pitch gain value and an averaged pitch gain value. When an instability is likely, the output of a gain control unit is set to an adaptive gain control value. When an instability is unlikely, the gain control unit passes the pitch gain to its output unmodified.