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    Micromechanical sensor including a single-crystal silicon support
    31.
    发明授权
    Micromechanical sensor including a single-crystal silicon support 失效
    微机械传感器包括单晶硅支架

    公开(公告)号：US06076404A

    公开(公告)日：2000-06-20

    申请号：US791106

    申请日：1997-01-29

    Applicant: Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    Inventor： Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    IPC: G01H11/06 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125

    CPC classification number: G01H11/06 ,  G01L9/0042 ,  G01L9/0054 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817 ,  G01P2015/0828

    Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

    Abstract translation: 微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。 通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。 裸露的偏转部分由多晶硅制成，该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。 在支撑区域和/或与硅衬底的连接处，暴露的偏转部分进入单晶硅。 通过大层厚度，传感器的大工作容量是可能的。 该传感器结构提供增强的机械稳定性，可加工性和成形的可能性，并且其可以特别集成在双极工艺或混合工艺（双极CMOS，双极型CMOS-DMOS）中。

    Process for producing surface micromechanical structures
    34.
    发明授权
    Process for producing surface micromechanical structures 失效
    生产表面微机械结构的方法

    公开(公告)号：US5683591A

    公开(公告)日：1997-11-04

    申请号：US553571

    申请日：1995-11-27

    Applicant: Michael Offenberg

    Inventor： Michael Offenberg

    IPC: C23F1/00 ,  B81B3/00 ,  C23F1/12 ,  C23F1/24 ,  C23F4/00 ,  G01P15/08 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22 ,  H01L21/00

    CPC classification number: B81C1/0092 ,  B81C1/00936 ,  G01P15/0802 ,  B81C2201/0132

    Abstract: A method for fabricating surface-micromechanical structures wherein a sacrificial layer, in particular of silicon oxide, is deposited on a silicon substrate represented by a silicon wafer, the sacrificial layer being patterned. Onto the sacrificial layer, a second layer, in particular of polysilicon, is deposited and is likewise patterned. The sacrificial layer is removed in an etching operation by means of an etching medium which attacks the sacrificial layer but not the second layer, structures being formed as a result of which are free-standing above the silicon substrate at a distance equal to the thickness of the removed sacrificial layer and are anchored at certain sites on the silicon substrate. According to the invention, for the purpose of etching and exposing, the micromechanical structures are exposed to the vapor phase of a mixture of anhydrous hydrofluoric acid and water in a vapor-phase etching process. This makes it possible to dispense with laborious rinsing operations and sublimation operations.

    Abstract translation: PCT No.PCT / DE94 / 00538 Sec。 371日期：1995年11月27日 102（e）日期1995年11月27日PCT提交1994年5月11日PCT公布。 公开号WO94 / 28426 日期1994年12月8日一种用于制造表面微机械结构的方法，其中牺牲层，特别是氧化硅，沉积在由硅晶片表示的硅衬底上，牺牲层被图案化。 在牺牲层上，沉积第二层，特别是多晶硅层，同样构图。 牺牲层在蚀刻操作中通过蚀刻介质去除，该蚀刻介质攻击牺牲层而不是第二层，结构被形成，其结构是以等于硅衬底厚度的方式自由地在硅衬底上方 去除的牺牲层并锚定在硅衬底上的某些位置。 根据本发明，为了蚀刻和曝光的目的，在气相蚀刻工艺中，微机械结构暴露于无水氢氟酸和水的混合物的气相。 这使得可以省去费力的冲洗操作和升华操作。

    Suspension for micromechanical structure and micromechanical acceleration sensor
    35.
    发明授权
    Suspension for micromechanical structure and micromechanical acceleration sensor 失效
    用于微机械结构和微机械加速度传感器的悬架

    公开(公告)号：US5646347A

    公开(公告)日：1997-07-08

    申请号：US521942

    申请日：1995-08-31

    Applicant: Kurt Weiblen ,  Michael Offenberg ,  Bernhard Elsner

    Inventor： Kurt Weiblen ,  Michael Offenberg ,  Bernhard Elsner

    IPC: B81B3/00 ,  B81C1/00 ,  G01P1/00 ,  G01P15/125 ,  H01L49/00

    CPC classification number: G01P1/006 ,  G01P15/125 ,  G01P2015/0814

    Abstract: A suspension or an acceleration sensor having a suspension is proposed, by means of which a micromechanical structure or the acceleration sensor is anchored on a substrate. The suspension takes place by means of lever elements on which an equalizing beam acts. The lever elements are deformed by the stresses in the equalizing beam with respect to the substrate in such a way that the stresses in the microstructure with respect to the substrate are either compensated for or, alternatively, are converted from compressive stresses to tensile stresses or from tensile stresses to compressive stresses.

    Abstract translation: 提出了具有悬架的悬架或加速度传感器，通过该悬架或加速度传感器将微机械结构或加速度传感器锚定在基板上。 悬挂通过杠杆元件进行，平衡梁作用在杠杆元件上。 杠杆元件通过相等于基板的均衡梁中的应力变形，使得相对于基板的微结构中的应力被补偿或者替代地从压缩应力转变为拉伸应力或从 对应力的拉伸应力。

    Method of fabricating a micromechanical sensor
    37.
    发明授权
    Method of fabricating a micromechanical sensor 失效
    制造微机械传感器的方法

    公开(公告)号：US5616514A

    公开(公告)日：1997-04-01

    申请号：US470373

    申请日：1995-06-06

    Applicant: Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    Inventor： Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    IPC: G01H11/06 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  H01L21/20

    CPC classification number: G01H11/06 ,  G01L9/0042 ,  G01L9/0054 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817 ,  G01P2015/0828

    Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

    Abstract translation: 微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。 通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。 裸露的偏转部分由多晶硅制成，该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。 在支撑区域和/或与硅衬底的连接处，暴露的偏转部分进入单晶硅。 通过大层厚度，传感器的大工作容量是可能的。 该传感器结构提供增强的机械稳定性，可加工性和成形的可能性，并且其可以特别集成在双极工艺或混合工艺（双极CMOS，双极CMOS-DMOS）中。

    Acceleration sensor
    38.
    发明授权
    Acceleration sensor 失效
    加速度传感器

    公开(公告)号：US5574222A

    公开(公告)日：1996-11-12

    申请号：US511184

    申请日：1995-08-04

    Applicant: Michael Offenberg

    Inventor： Michael Offenberg

    IPC: G01P15/125 ,  H01L29/84

    CPC classification number: G01P15/125

    Abstract: In an acceleration sensor having a multiplicity of movable electrodes, a first group of fixed electrodes is arranged on one side of the movable electrodes and a second group of fixed electrodes is arranged on the other side of the movable electrodes. The fixed electrodes of the first group are suspended from a connecting beam and are connected in parallel electrically by the latter. The fixed electrodes of the second group are anchored individually on the substrate and are connected in parallel electrically by means of a connecting conductor track.

    Abstract translation: 在具有多个可动电极的加速度传感器中，在可动电极的一侧配置第一组固定电极，在可动电极的另一侧设置第二组固定电极。 第一组的固定电极从连接梁悬挂，并由电极并联连接。 第二组的固定电极单独地锚定在基板上，并通过连接导体轨迹电连接。

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