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    Method for fabricating a micromechanical component
    2.
    发明授权
    Method for fabricating a micromechanical component 有权
    微机械部件的制造方法

    公开(公告)号：US06268232B1

    公开(公告)日：2001-07-31

    申请号：US09302224

    申请日：1999-04-29

    Applicant: Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

    Inventor： Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

    IPC: H01L2100

    CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81C1/00571 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/056 ,  B81C2203/0109 ,  G01P1/023

    Abstract: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

    Abstract translation: 用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。 包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分 绝缘层从导电层下面。 通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。 在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

    Angular velocity sensor with built-in limit stops
    3.
    发明授权
    Angular velocity sensor with built-in limit stops 失效
    角速度传感器，内置限位件

    公开(公告)号：US5721377A

    公开(公告)日：1998-02-24

    申请号：US681243

    申请日：1996-07-22

    Applicant: Juergen Kurle ,  Kurt Weiblen ,  Horst Muenzel ,  Helmut Baumann ,  Klaus Heyers ,  Markus Lutz

    Inventor： Juergen Kurle ,  Kurt Weiblen ,  Horst Muenzel ,  Helmut Baumann ,  Klaus Heyers ,  Markus Lutz

    IPC: G01C19/56 ,  G01P9/04

    CPC classification number: G01C19/5712 ,  G01P2015/0814

    Abstract: In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.

    Abstract translation: 在角速度传感器中，加速度传感器布置在由多层基板形成并且附接到谐振杆的谐振器上。 多层基板包括顶部硅层，布置在顶部硅层下方的绝缘牺牲层和布置在绝缘牺牲层下方的底部硅层。 激励器使谐振器振动，而由多层基板构成的极限停止限制了谐振器的移动。

    Mass flow sensor
    4.
    发明授权
    Mass flow sensor 失效
    质量流量传感器

    公开(公告)号：US5705745A

    公开(公告)日：1998-01-06

    申请号：US700745

    申请日：1996-07-29

    Applicant: Christoph Treutler ,  Detlef Gruen ,  Horst Muenzel ,  Helmut Baumann ,  Steffen Schmidt ,  Andreas Lock

    Inventor： Christoph Treutler ,  Detlef Gruen ,  Horst Muenzel ,  Helmut Baumann ,  Steffen Schmidt ,  Andreas Lock

    IPC: G01F1/68 ,  G01F1/684 ,  G01F1/692

    CPC classification number: G01F1/6845

    Abstract: In a mass flow sensor having a frame of monocrystalline silicon and a membrane fixed therein, a heating element and, if indicated, temperature-measuring elements are provided on the membrane. A heat-conducting element, which extends from the membrane across the frame, is provided in the edge area of the membrane. The heating element, the heat-conducting element and, if indicated, temperature-measuring elements are patterned out of a single metal layer.

    Abstract translation: 在具有单晶硅框架和固定在其中的膜的质量流量传感器中，加热元件，如果指示，则在膜上提供温度测量元件。 在膜的边缘区域设置从膜穿过框架延伸的导热元件。 如图所示，加热元件，导热元件和温度测量元件由单个金属层图案化。

    Micromechanical sensor and method for the manufacture thereof
    8.
    发明授权
    Micromechanical sensor and method for the manufacture thereof 有权
    微机械传感器及其制造方法

    公开(公告)号：US06318175B1

    公开(公告)日：2001-11-20

    申请号：US09585141

    申请日：2000-06-01

    Applicant: Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    Inventor： Joerg Muchow ,  Horst Muenzel ,  Michael Offenberg ,  Winfried Waldvogel

    IPC: G01P1500

    CPC classification number: G01H11/06 ,  G01L9/0042 ,  G01L9/0054 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817 ,  G01P2015/0828

    Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

    Abstract translation: 微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。 通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。 裸露的偏转部分由多晶硅制成，该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。 在支撑区域和/或与硅衬底的连接处，暴露的偏转部分进入单晶硅。 通过大层厚度，传感器的大工作容量是可能的。 该传感器结构提供增强的机械稳定性，可加工性和成形的可能性，并且其可以特别集成在双极工艺或混合工艺（双极CMOS，双极CMOS-DMOS）中。

    Acceleration sensor
    9.
    发明授权
    Acceleration sensor 有权
    加速度传感器

    公开(公告)号：US06055858A

    公开(公告)日：2000-05-02

    申请号：US362936

    申请日：1999-07-28

    Applicant: Horst Muenzel ,  Dietrich Schubert ,  Alexandra Boehringer ,  Michael Offenberg ,  Klaus Heyers ,  Markus Lutz

    Inventor： Horst Muenzel ,  Dietrich Schubert ,  Alexandra Boehringer ,  Michael Offenberg ,  Klaus Heyers ,  Markus Lutz

    IPC: G01P15/02 ,  G01P3/48 ,  G01P9/04 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P3/00

    CPC classification number: G01P3/48 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/135 ,  Y10S148/159

    Abstract: An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.

    Abstract translation: 加速度传感器由三层系统组成。 将加速度传感器和导体轨迹从第三层图案化。 导体轨道通过凹部与第三层的其它区域电绝缘，并且通过第二电绝缘层与第一层电绝缘。 以这种方式，实现了由三层系统构成的简单的电接触。 加速度传感器的一个示例性应用包括将加速度传感器安装在rpm（转速传感器）的振动系统上。 这简化了rpm传感器的制造，因为振动系统和加速度传感器是由三层系统构成的，其中导体轨道运行到其中悬挂振动系统的转速传感器的框架中，以便 允许游览。

    Semiconductor sensor having a protective layer
    10.
    发明授权
    Semiconductor sensor having a protective layer 失效
    具有保护层的半导体传感器

    公开(公告)号：US5629538A

    公开(公告)日：1997-05-13

    申请号：US433576

    申请日：1995-05-03

    Applicant: Uwe Lipphardt ,  Guenther Findler ,  Horst Muenzel ,  Helmut Baumann

    Inventor： Uwe Lipphardt ,  Guenther Findler ,  Horst Muenzel ,  Helmut Baumann

    IPC: G01L9/04 ,  G01L9/00 ,  G01L19/06 ,  H01L29/84 ,  H01L29/82

    CPC classification number: G01L19/147 ,  G01L19/0627 ,  G01L9/0042

    Abstract: A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.

    Abstract translation: 优选地设计为压力传感器的半导体芯片在其后侧具有一个或多个凹陷，其中通过相应设计的隔膜耦合压敏电阻来测量压力。 凹部的表面和可选地，半导体芯片的后侧涂覆有保护层，其保护半导体免受侵蚀性介质的侵害。 因此，保护​​层使得可以将传感器普遍用于酸，碱液或热气体中。

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