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12 条记录 (耗时 0.025 秒)

    Capacitive accelerometer sensor and method for its manufacture
    3.
    发明授权
    Capacitive accelerometer sensor and method for its manufacture 失效
    电容式加速度传感器及其制造方法

    公开(公告)号：US5569852A

    公开(公告)日：1996-10-29

    申请号：US355760

    申请日：1994-12-14

    申请人： Jiri Marek ,  Frank Bantien ,  Horst Muenzel ,  Michael Offenberg

    发明人： Jiri Marek ,  Frank Bantien ,  Horst Muenzel ,  Michael Offenberg

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A contacting of a capacitive accelerometer sensor of monocrystalline material is achieved by a capacitive accelerometer sensor having a structure etched out of a monocrystalline layer arranged on a substrate, including a seismic mass that is only joined to the substrate by suspension segments and executing a movement in its longitudinal direction in response to the occurrence of an acceleration of parallel, plate-like first fingers extending out from this mass at right angles to their longitudinal direction and of plate-like second fingers running parallel to the first fingers and anchored to the substrate. The first and second fingers form a capacitor arrangement. The suspension segments, which are anchored with their end region that is distant from the seismic mass to the substrate, and second fingers are electrically isolated, by an isolation strip, from the other remaining layer of monocrystalline material. A passivation layer extends over the isolation strip, and at least partially over the remaining layer. Conductors arranged on the passivation layer and serving as connecting leads for the capacitor arrangement extend across the isolation strip up to the connections of the capacitor arrangement, and are contacted there.

    摘要翻译： 单晶材料的电容式加速度计传感器的接触是通过电容式加速度计传感器实现的，该传感器具有从布置在基底上的单晶层中蚀刻出的结构，包括仅通过悬挂段连接到基底的地震质量块， 其纵向方向响应于从该质量块与其纵向方向成直角地延伸的平行的板状第一指状物的加速度以及平行于第一指状物并且锚固到基底的板状第二指状物的加速度。 第一和第二指形成电容器布置。 将其远离地震质体的端部区域锚定到基底的悬挂段和第二指状物通过隔离带与另一个剩余的单晶材料层电隔离。 钝化层在隔离带上延伸，并且至少部分地覆盖剩余层。 布置在钝化层上并且用作电容器布置的连接引线的导体跨过隔离带延伸直到电容器装置的连接，并且在那里接触。

    Acceleration and vibration sensor and method of making the same
    6.
    发明授权
    Acceleration and vibration sensor and method of making the same 失效
    加速和振动传感器及其制作方法

    公开(公告)号：US5151763A

    公开(公告)日：1992-09-29

    申请号：US631623

    申请日：1990-12-21

    申请人： Jiri Marek ,  Frank Bantien ,  Dietmar Haack ,  Martin Warth

    发明人： Jiri Marek ,  Frank Bantien ,  Dietmar Haack ,  Martin Warth

    IPC分类号： G01H11/06 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L27/04 ,  H01L29/84 ,  H04R19/00

    CPC分类号： G01P15/125 ,  G01H11/06 ,  G01P15/0802 ,  G01P2015/0814 ,  H04R19/005

    摘要： A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.

    摘要翻译： 具有与形成有外延层的基板的导电类型相反的外延层的半导体板具有包括一个或多个细长沟道的凹陷部。 将凹陷蚀刻到完全穿过外延层的深度中，以将至少一个从舌基座延伸的舌片隔离成蚀刻的凹陷部，并且具有垂直于半导体板的主平面的平行的主边。 舌头被低蚀刻，使得它可以通过平行于板的主平面的方向的运动而自由振动。 至少在一个实施例中，舌片的主要侧面之一跨越间隙固定电极，并且电极和舌片彼此绝缘，因为蚀刻的凹陷一直延伸穿过外延层的事实 深度。 舌头的偏转或振动会改变电极和舌头之间的电容，并提供触点用于测量电容。 示出了利用多个舌片和一个或多个电极的各种实施例。

    Silicon chip for use in a force-detection sensor
    7.
    发明授权
    Silicon chip for use in a force-detection sensor 失效
    用于力检测传感器的硅芯片

    公开(公告)号：US5600074A

    公开(公告)日：1997-02-04

    申请号：US240740

    申请日：1994-05-10

    申请人： Jiri Marek ,  Frank Bantien ,  Steffen Schmidt ,  Kurt Weiblen ,  Matthias Kuesell ,  Werner Herden

    发明人： Jiri Marek ,  Frank Bantien ,  Steffen Schmidt ,  Kurt Weiblen ,  Matthias Kuesell ,  Werner Herden

    IPC分类号： G01L9/06 ,  G01L1/18 ,  G01L9/00 ,  G01L23/10 ,  G01L23/18 ,  G01L1/10

    CPC分类号： G01L1/18 ,  G01L23/18 ,  G01L9/0054 ,  Y10S73/04

    摘要： A force sensor employing a silicon chip having a force application area on a top surface and attached to a support at a bottom surface. Piezoresistive elements are arranged on the silicon chip in areas of high mechanical tension and produce signals. Circuits, which receive the signals produced by the piezoresistive elements, are arranged on the silicon chip in areas of low mechanical tension. The areas of mechanical tension may be influenced by providing grooves and/or recesses in the bottom surface of the silicon chip and by providing grooves in the top surface of the silicon chip.

    摘要翻译： PCT No.PCT / DE92 / 00870 Sec。 371日期1994年5月10日 102（e）日期1994年5月10日PCT提交1992年10月16日PCT公布。 出版物WO93 / 10430 日期：1993年5月27日一种力传感器，其采用具有在上表面上的施力区域的硅芯片并且附接到底表面上的支撑件。 压敏元件在高度机械张力的区域被布置在硅芯片上并产生信号。 接收由压阻元件产生的信号的电路在低机械张力的区域中布置在硅芯片上。 可能通过在硅芯片的底表面中提供槽和/或凹槽并且通过在硅芯片的顶表面中提供凹槽来影响机械张力的区域。

    Micromechanical tilt sensor
    9.
    发明授权
    Micromechanical tilt sensor 失效
    微电子倾斜传感器

    公开(公告)号：US5148604A

    公开(公告)日：1992-09-22

    申请号：US701781

    申请日：1991-05-17

    申请人： Frank Bantien

    发明人： Frank Bantien

    IPC分类号： G01C9/06 ,  G01P15/08 ,  G01P15/125

    CPC分类号： G01C9/06 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0834 ,  G01P2015/086

    摘要： A sensor for measurement of tilt or inclination angle features a sensor element made from a monocrystalline silicon wafer, from which is etched at least one movable silicon mass. The silicon mass is freed from the surrounding wafer by an etch groove which completely penetrates the silicon wafer, and is connected to the silicon wafer by two bars lying in a common axis, so that, upon flexing or torsioning of the bars, the silicon mass is movable or rotatable about the axis of the bars. The sensor element is connected with an upper and/or a lower cover. On at least one of the covers, adjacent the silicon mass, at least two electrodes are placed. The silicon mass and the two electrodes form a pair of capacitances, and the movement or excursion of the silicon mass is detected by evaluation of the difference between the capacitances.

    摘要翻译： 用于测量倾斜或倾斜角度的传感器具有由单晶硅晶片制成的传感器元件，从该晶片上蚀刻至少一个可移动硅质量块。 硅质量块通过完全穿透硅晶片的蚀刻槽与周围的晶片脱离，并且通过位于公共轴线上的两个棒连接到硅晶片，使得在棒的弯曲或扭转时，硅质量块 可以围绕杆的轴线移动或旋转。 传感器元件与上盖和/或下盖连接。 在与硅质块相邻的盖中的至少一个上放置至少两个电极。 硅质量和两个电极形成一对电容，并且通过评估电容之间的差异来检测硅质量的移动或偏移。

    Temperature sensor
    10.
    发明授权
    Temperature sensor 失效
    温度感应器

    公开(公告)号：US5446437A

    公开(公告)日：1995-08-29

    申请号：US998516

    申请日：1992-12-30

    申请人： Frank Bantien ,  Eckart Reihlen

    发明人： Frank Bantien ,  Eckart Reihlen

    IPC分类号： G01F1/684 ,  G01F1/688 ,  G01F1/69 ,  G01K7/02 ,  G01K7/22 ,  H01C3/04

    CPC分类号： G01F1/6888 ,  G01F1/6845 ,  G01K7/02 ,  G01K7/22 ,  Y10S438/977

    摘要： An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.

    摘要翻译： 改进的温度传感器设计用于灵敏检测温度变化。 温度传感器包括单晶硅的框架9和在其上延伸的电介质隔膜13。 单晶硅结构35设置在用于测量温度的介质隔膜上或下。 在此过程中，塞贝克效应以及电阻的温度依赖性可用于检测任何温度变化。