Abstract:
A micromechanical component includes: a substrate; a micromechanical functional plane provided on the substrate; a covering plane provided on the micromechanical functional plane; and a printed circuit trace plane provided on the covering plane. The covering plane includes a monocrystalline region which is epitaxially grown on an underlying monocrystalline region, and the covering plane includes a polycrystalline region which is epitaxially grown on an underlying polycrystalline starting layer at the same time.
Abstract:
A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.
Abstract:
A manufacturing method for a micromechanical component, and in particular for a micromechanical rotation rate sensor, which has a supporting first layer, an insulating second layer that is arranged on the first layer, and a conductive third layer that is arranged on the second layer. The method includes the following steps: provide the second layer, in the form of patterned first and second insulation regions, on the first layer; provide a first protective layer on an edge region of the first insulation regions and on a corresponding boundary region of the first layer; provide the third layer on the structure resulting from the previous steps; pattern out a structure of conductor paths running on the first insulation regions, and a functional structure of the micromechanical component above the second insulation regions, from the third layer; and remove the second layer in the second insulation regions, the second layer being protected in the first insulation regions by the first protective layer in such a way that it is essentially not removed there.
Abstract:
A sensor in which the structure of a movable element is produced from an upper silicon layer of a laminated substrate. Individual regions of the upper layer are insulated from one another by insulation trenches which are bridged by conductor tracks coupled to at least one electrode on the movable element and at least one stationary electrode on the upper layer proximate to the at least one electrode on the movable element.
Abstract:
A mass flow sensor includes a measuring element arranged on a membrane that is clamped in a frame. The sensor is formed by introducing a recess into a silicon wafer. Through the application of a recess having perpendicular walls, the thickness of the frame can be reduced, thus allowing the required surface area of the wafer to also be reduced.
Abstract:
A method for producing capacitive sensors which is used in particular for the parallel production of capacitive sensors with exactly defined stray capacitance. For this purpose, troughs (15, 16, 17) are cut along or parallel to the splitting lines (6), so that adjustment errors in the position of the cut, during separation of the sensors, and variations in the cut width have no effect on the stray capacitance.
Abstract:
A micromechanical sensor element includes: a substrate; a first seismic mass suspended from the substrate, which is deflectable from a first rest position by an acceleration acting perpendicularly to a main plane of extension; and a second seismic mass, which is deflectable from a second rest position by the acceleration. At least a partial overlap is provided between the first seismic mass and the second seismic mass perpendicular to the main plane of extension.
Abstract:
The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).
Abstract:
A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.
Abstract:
In an accelerometer sensor of crystalline material, whose components are composed partly of monocrystalline and partly of polycrystalline material, a band-shaped seismic mass preferably is composed of polycrystalline material, whose suspension by means of suspension segments of monocrystalline material at the end regions permits a movement in the longitudinal direction upon the occurrence of an acceleration. Parallel plates extend from this mass at right angles to their longitudinal direction and, together with additional plates, which run parallel to said plates and are anchored at a base, form a capacitor arrangement and are composed, in particular, of monocrystalline material. At least the monocrystalline material is doped to attain an electric conductivity. When lightly doped, the long and thin plates and suspension segments have a high conductivity, given a very small mechanical prestressing, and can easily be isotropically undercut. The polycrystalline formation of the seismic mass can be designed to be very wide and large by etching away an underlying sacrificial oxide.