Apparatus and method for characterizing semiconductor wafers during
processing

    公开(公告)号:US5996415A

    公开(公告)日:1999-12-07

    申请号:US847144

    申请日:1997-04-30

    摘要: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

    Method and apparatus for inspecting well bore casing
    32.
    发明授权
    Method and apparatus for inspecting well bore casing 失效
    井筒套检查方法和装置

    公开(公告)号:US5717169A

    公开(公告)日:1998-02-10

    申请号:US703305

    申请日:1996-08-26

    摘要: An improved technique for determining the thickness of a member, especially pipe such as fluid-filled casing in an earth borehole, includes the following steps: directing a pulse of ultra-sonic energy toward the inner surface of the pipe and receiving/storing, as a function of time, signals representative of ultra-sonic energy reflected from the inner surface of the pipe; determining, from the stored signals, the arrival or the initial echo from the inner surface; determining from the stored signals, the arrival and the amplitude of a first candidate initial echo from the outer surface of the pipe; performing a reverse search on the stored signals to determine, from stored signals at times earlier than the arrival time of the first candidate the arrival and the amplitude of a second candidate initial echo from the outer surface; comparing amplitudes of the first and second candidates and selecting, based on the comparison, one of the first and second candidates as the actual outer surface echo; and determining the thickness of the pipe from the arrival time of the actual outer surface echo and the arrival time of the inner surface echo. Using this technique, the earlier arriving candidate can be properly identified as the actual outer surface echo, even when the later arriving candidate has a greater amplitude.

    摘要翻译: 一种用于确定构件厚度的改进技术,特别是诸如地球钻孔中的流体填充壳体的管道,包括以下步骤:将超声能量的脉冲引导到管的内表面并接收/存储,如 时间的函数,表示从管内表面反射的超声能的信号; 从存储的信号确定来自内表面的到达或初始回波; 从存储的信号确定来自管道的外表面的第一候选初始回波的到达和振幅; 对所存储的信号执行反向搜索,以从存储的信号确定来自第一候选者的到达时间的时间来自外表面的第二候选初始回波的到达和振幅; 比较第一和第二候选的振幅,并且基于比较选择第一和第二候选中的一个作为实际外表面回波; 并根据实际外表面回波的到达时间和内表面回波的到达时间来确定管道的厚度。 使用这种技术,即使当后来的候选者具有更大的振幅时,早期到达的候选者也可被适当地识别为实际的外表面回波。

    Accurate small-spot spectrometry systems and methods
    33.
    发明授权
    Accurate small-spot spectrometry systems and methods 有权
    精确的小光谱分析系统和方法

    公开(公告)号:US06870617B2

    公开(公告)日:2005-03-22

    申请号:US10796322

    申请日:2004-03-09

    IPC分类号: G01J3/08 G01J3/42 G01N21/55

    摘要: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.

    摘要翻译: 本发明是用于确定样品特性的方法和装置。 该系统和方法提供用于检测从反射镜反射的监视光束,其中监视光束对应于入射在样本上的光的强度。 该系统和方法还提供了用于检测测量光束,其中测量光束已经从被表征的样品反射出来。 监测光束和测量光束都通过相同的传输路径传输,并由相同的检测器检测。 因此,监测光束和测量光束之间不是由于样品特性引起的变化的潜在来源被最小化。 可以通过将与测量光束相对应的数据相对于监视光束对应的数据进行比较来确定样本的反射率信息。

    Overlay alignment metrology using diffraction gratings
    34.
    发明授权
    Overlay alignment metrology using diffraction gratings 有权
    使用衍射光栅覆盖对准测量

    公开(公告)号:US06819426B2

    公开(公告)日:2004-11-16

    申请号:US10074561

    申请日:2002-02-12

    IPC分类号: G01B1100

    摘要: Alignment accuracy between two or more patterned layers is measured using a metrology target comprising substantially overlapping diffraction gratings formed in a test area of the layers being tested. An optical instrument illuminates all or part of the target area and measures the optical response. The instrument can measure transmission, reflectance, and/or ellipsometric parameters as a function of wavelength, polar angle of incidence, azimuthal angle of incidence, and/or polarization of the illumination and detected light. Overlay error or offset between those layers containing the test gratings is determined by a processor programmed to calculate an optical response for a set of parameters that include overlay error, using a model that accounts for diffraction by the gratings and interaction of the gratings with each others' diffracted field. The model parameters might also take account of manufactured asymmetries. The calculation may involve interpolation of pre-computed entries from a database accessible to the processor. The calculated and measured responses are iteratively compared and the model parameters changed to minimize the difference.

    摘要翻译: 使用包括在被测试层的测试区域中形成的基本上重叠的衍射光栅的测量目标来测量两个或更多个图案化层之间的对准精度。 光学仪器照亮目标区域的全部或部分,并测量光学响应。 仪器可以测量作为波长,极角入射角,入射方位角和/或照明和检测光的偏振的函数的透射率,反射率和/或椭偏参数。 包含测试光栅的那些层之间的叠加误差或偏移量被编程为使用考虑光栅衍射的模型和光栅与彼此的相互作用计算包括重叠误差的一组参数的光学响应的​​处理器来确定 '衍射场 模型参数也可能考虑到制造的不对称性。 该计算可以包括从处理器可访问的数据库插入预先计算的条目。 迭代比较计算和测量的响应,改变模型参数以最小化差异。

    Method of measuring meso-scale structures on wafers
    35.
    发明授权
    Method of measuring meso-scale structures on wafers 有权
    测量晶圆上的中尺度结构的方法

    公开(公告)号:US06806105B2

    公开(公告)日:2004-10-19

    申请号:US10621218

    申请日:2003-07-16

    IPC分类号: H01L2166

    摘要: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.

    Method of measuring meso-scale structures on wafers

    公开(公告)号:US06340602B1

    公开(公告)日:2002-01-22

    申请号:US09735286

    申请日:2001-02-12

    IPC分类号: H01L2100

    摘要: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.

    Apparatus and method for characterizing semiconductor wafers during
processing
    37.
    发明授权
    Apparatus and method for characterizing semiconductor wafers during processing 有权
    用于在加工期间表征半导体晶片的装置和方法

    公开(公告)号:US6112595A

    公开(公告)日:2000-09-05

    申请号:US420217

    申请日:1999-10-18

    摘要: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

    摘要翻译: 公开了用于表征可支持声波的半导体晶片或其它测试对象的装置和方法。 源和接收换能器被配置成各种布置以分别激发和检测要表征的晶片中的声波(例如,兰姆波)。 表示检测到的波的信号被数字处理并用于计算与晶片中的波速相关的测量集。 提供了表征灵敏度,其描述不同的感兴趣的晶片特性随着声波传播的变化而变化。 使用在所有晶片特性已知的建立时间计算的表征灵敏度和测量集,以及当至少一个特性未知时的一个或多个处理时间,可以确定设置和处理时间之间的晶片特性的扰动。 通过晶片校准程序改进表征精度,其中针对每个被表征的晶片确定对已知条件的测量偏移。 公开了一种用于校正由于相对于晶片的优选结晶轴的波传播方向引起的声波速度的各向异性的装置和技术。 还描述了一种用于使用单个换能器来测量晶片温度的装置和技术,其温度与晶片的温度和可选的谐振器结构相关。 对于在夹持晶片时发生的表征步骤,描述了一种卡盘结构,其减小卡盘干扰晶片中的波的可能性。

    Method of analyzing waveforms
    38.
    发明授权
    Method of analyzing waveforms 失效
    波形分析方法

    公开(公告)号:US5859811A

    公开(公告)日:1999-01-12

    申请号:US609114

    申请日:1996-02-29

    IPC分类号: G01V1/48 G01V1/40

    CPC分类号: G01V1/48

    摘要: A method of analyzing a spatial series of waveforms, each waveform of which contains components arising from at least two substantially uncorrelated features, includes the steps of sorting the waveforms into groups or bins according to values of one or more of the features, determining a mean waveform for each group or bin, subtracting the mean waveform from each waveform in the group or bin, returning the waveforms to the original order of the series and determining a remaining feature. Binning, the process of sorting waveforms into groups based on values of features, can be performed for one feature determined from the waveform or for several features. All that is required is that the binning criteria are substantially uncorrelated with the feature of interest. An example of a binning criterion can be frequency or period of a component of the waveform. Also a value of a physical parameter calculated from the waveform can be used as a binning criterion.

    摘要翻译: 一种分析波形的空间系列的方法,其波形的每个波形包含由至少两个基本上不相关的特征产生的分量,包括根据一个或多个特征的值将波形分组成组或分组的步骤,确定平均值 波形,从组或箱中的每个波形中减去平均波形,将波形返回到该系列的原始顺序并确定剩余的特征。 对于从波形或几个特征确定的一个特征,可以对分组进行基于特征值的波形分组的处理。 所需要的是,合并标准与感兴趣的特征基本上不相关。 分档标准的示例可以是波形的分量的频率或周期。 也可以使用从波形计算的物理参数的值作为合并标准。