Abstract:
In accordance with an embodiment of the invention, an IC device is disclosed. In the embodiment, the IC device includes an array of bit cells of static random-access memory (SRAM), a multi-level digitization module configured to generate a value in a range of values from a bit cell in the array of bit cells, the range of values including more than two discrete values, an output buffer configured to store the generated values, and an error correction code (ECC) decoder configured to output error corrected values based on the stored values.
Abstract:
As may be consistent with one or more embodiments, an apparatus and or method involves a switching power supply circuit and a control circuit therefor. The switching power supply circuit operates in high and low-power modes. In the high power mode, high and low power rails of a first circuit and of a second circuit are coupled to a power source circuit (e.g. a battery). In the low-power mode, the first circuit is operated in a high power domain and the second circuit is operated in a low power domain using recycled charge from the high power domain. The control circuit operates the switching circuit in the high-power mode and low-power mode (for power conservation) in response to a control signal.
Abstract:
One example discloses an apparatus for power management, including: a circuit having a first power-domain and a second power-domain; wherein the first and second power-domains include a set of operating parameter values; a circuit controller configured to incrementally sweep at least one of the operating parameter values of the first power-domain; a circuit profiler configured to derive a total power consumption profile of the circuit based on the circuit's response to the swept operating parameter value; wherein the circuit controller sets the operating parameter values for the first and second power-domains based on the total power consumption profile of the circuit.
Abstract:
An integrated circuit (IC) device including an SRAM module coupled to wrapper logic is disclosed. The wrapper logic includes an error correction code (ECC) encoder configured to encode input data in accordance with an ECC encoding scheme and output the encoded input data to the SRAM module, an ECC decoder configured to decode output data received from the SRAM module, output the decoded output data, and write decoding information back to the SRAM module, an error controller coupled to the ECC decoder that is configured to control the ECC decoder in accordance with the ECC encoding scheme, and a central controller coupled to the components of the wrapper logic and the SRAM module in order to control operations between the components of the wrapper logic and the SRAM module.
Abstract:
Embodiments of a latch circuit and a method of operating a latch circuit are described. In one embodiment, a latch circuit includes an input terminal configured to receive an input data signal, a switching unit configured to control application of the input data signal, a first inverter circuit connected to the switching unit, where the first inverter circuit includes a first cross-coupled pair of inverters, and a second inverter circuit connected to the first inverter circuit through the switching unit. The second inverter circuit includes a second cross-coupled pair of inverters and two transistor devices. Each inverter of the second cross-coupled pair of inverters is connected to a voltage rail through a corresponding transistor device. Each of the two transistor devices is connected to a node that is between the switching unit and the first inverter circuit or the second inverter circuit. Other embodiments are also described.
Abstract:
Aspects of the present disclosure are directed to operating time-based circuitry. As may be implemented in connection with one or more embodiments, an apparatus and or method involved detecting timing characteristics of circuitry operating in respective clock domains, each having a semiconductor body region via which a clock signal path traverses. The respective semiconductor body regions are biased at respective bias levels that are based on the detected timing characteristics of the clock signal path that traverses the semiconductor body region being biased.
Abstract:
A system including: a voltage converter configured to convert a voltage from a power source to a different voltage; a memory coupled to the voltage converter; a digital logic circuit; and a level shifter coupled between the memory and digital logic circuit; wherein leakage current from the memory is stored in a capacitance in the digital logic circuit, wherein the voltage converter is further coupled to a node between the memory and digital logic circuit, and wherein the voltage converter is configured to: monitor a voltage at the node wherein the node has a desired operating voltage value; and adjust the voltage at the node when the voltage at the node varies from the desired operating voltage value.
Abstract:
Embodiments of a latch circuit and a method of operating a latch circuit are described. In one embodiment, a latch circuit includes an input terminal configured to receive an input data signal, a switching unit configured to control application of the input data signal, a first inverter circuit connected to the switching unit, where the first inverter circuit includes a first cross-coupled pair of inverters, and a second inverter circuit connected to the first inverter circuit through the switching unit. The second inverter circuit includes a second cross-coupled pair of inverters and two transistor devices. Each inverter of the second cross-coupled pair of inverters is connected to a voltage rail through a corresponding transistor device. Each of the two transistor devices is connected to a node that is between the switching unit and the first inverter circuit or the second inverter circuit. Other embodiments are also described.