摘要:
A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.
摘要:
An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.
摘要:
A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.
摘要:
A universally articulable supporting sheath comprises an interconnected series of links, each having a convex spherical surface at one end, and a concave spherical surface at its opposite end. The concave and convex surfaces mate with one another to form the sheath. Special links having branch openings may be provided. Various forms of waterproofing seals are provided, including O-rings, axially compressed rings, flexible belts, and ridges on the spherical surfaces. The links can be fitted together by thermal expansion. However, an axially split link is also described, which comprises two parts which snap together. The split parts may be molded as a unit with an integral thin wall hinge. The bending characteristics and bending radius of a sheath can be modified by insertion of spacers between the links at selected locations, or by the insertion of pins into radial holes provided in the links. Spacers with tongues may be used to prevent rotation of the links about the sheath axis, while allowing unidirectional articulation. Projections on one of a pair of mating spherical surfaces can be engaged with holes, slots or recesses of rectangular or other shapes to produce various limits on articulation and rotation. A single link may be provided with several alternatively usable holes, recesses and the like. The outer surface of a link can be provided with an axial extension engageable with a surface of an adjoining link to prevent back bending, or to prevent bending altogether.
摘要:
A paste type lead storage battery having a grid constituted by a grid base formed of a lead-calcium alloy and a layer of lead-antimony-stannum alloy roll-bonded integrally to the grid base on at least one side thereof. Preferably, the grid is formed by expanding a sheet of base material to which the alloy layer is integrally roll-bonded. Portions of the base and the alloy layer that serve as a active material support are both in contact with a paste-like active material, and antimony and stannum coexist in the alloy layer. The charge restoration after standing in a discharged state and the lifetime during cycles of charge and discharge including heavy discharge are thereby improved.
摘要:
A method for projecting a photelectron image includes providing a mask substrate, and selectively contacting a layer which lowers the work function of the mask substrate thereto. Photoelectrons are emitted from the contacted portion.
摘要:
A method incorporated in a high throughput EB lithography suitable to the fabrication of VLSI semiconductor circuit. The method comprises a step of providing patterns which are delineated to join together with an overlap determined in accordance with the time interval between the respective delineations thereof by using an electron beam having a high current density and/or high energy. When a first and a second patterns having respective edge portions contacting with each other are delineated in the order of the first pattern and the second pattern by respective exposures thereof to corresponding at least single shots of an electron beam, at least one of the first and second patterns is extended in the direction perpendicular to the edge portions so that the patterns are provided with an overlap with the amount determined in accordance with the time interval between the respective shots of the electron beam to said edge portions.
摘要:
A copier includes one motor for driving a photoconductive element unit, a developing unit, a fixing unit and other units, and another motor for driving an optical system. A clutch is interposed between the various units and the motor adapted to drive them. A device is provided for uncoupling the clutch for a predetermined period of time to interrupt the transmission of a drive force to the various units. The motor assigned to the units, clutch and drive force interrupting device are controlled such that the drive force interrupting device maintains the clutch uncoupled until the motor reaches a predetermined synchronous rotation speed after the start of rotation so as to interrupt the transmission of the drive force to the load, the clutch being coupled upon the lapse of the predetermined period of time to drive the load.
摘要:
A transistor circuit with hysteresis operation, which is formed with a detector part and selector part. The detector part detects a change in the level of an input signal according to one of first and second threshold levels, and generates an output signal having a level corresponding to the input signal. The level of the input signal is changed between a first level and a second level which is lower than the first level. The first and second threshold levels fall within a range defined between the first and second levels. The selector part selects one of the first and second threshold levels in accordance with the level of the output signal, and applies the selected one threshold level to the detector part.
摘要:
An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.