公开(公告)号：US06720196B2

公开(公告)日：2004-04-13

申请号：US10138420

申请日：2002-05-06

申请人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

发明人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

IPC分类号： H01L2100

CPC分类号： H01L21/02458 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The number of dislocations is reduced by a single lateral growth and is further reduced due to a dislocation loop effect by the quantum dots, without repeating lateral growth.

摘要翻译： 通过在下层的上表面上横向生长氮化物基半导体层并在横向生长的氮化物基半导体层上形成量子点，形成具有低位错密度的薄氮化物基半导体层。 位错的数量由于单个横向生长而减少，并且由于量子点的位错环效应而进一步减小，而不会重复横向生长。

公开(公告)号：US06821807B2

公开(公告)日：2004-11-23

申请号：US09941982

申请日：2001-08-30

申请人： Takashi Kano ,  Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Takashi Kano ,  Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L2120

CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0213 ,  H01S2304/04

摘要： In the manufacture of a semiconductor laser device, a low temperature buffer layer is grown on a sapphire substrate at a growth rate of 25 to 30 Å/sec. On the low temperature buffer layer, an n-GaN layer, a anti-crack layer, an n-cladding layer, an n-guide layer, an MQW active layer, a p-carrier blocking layer, a p-guide layer, a p-cladding layer and a p-contact layer are grown in this order. The growth of the low temperature buffer layer at the high growth rate allows a good low temperature buffer layer to be stably provided with good reproducibility. Thus, good crystallinity and electrical characteristics can stably be provided in the above layers.

摘要翻译： 在半导体激光器件的制造中，在蓝宝石衬底上以25〜30 /秒的生长速度生长低温缓冲层。 在低温缓冲层上，n-GaN层，抗裂纹层，n包层，n引导层，MQW有源层，p载流子阻挡层，p引导层， p覆层和p-接触层按此顺序生长。 低温缓冲层在高生长速率下的生长允许良好的低温缓冲层稳定地提供良好的再现性。 因此，在上述层中可以稳定地提供良好的结晶度和电特性。

公开(公告)号：US07977701B2

公开(公告)日：2011-07-12

申请号：US12818694

申请日：2010-06-18

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L33/32

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US06319742B1

公开(公告)日：2001-11-20

申请号：US09361246

申请日：1999-07-27

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20100300168A1

公开(公告)日：2010-12-02

申请号：US12745156

申请日：2008-11-21

申请人： Ryohei Ishikura ,  Takashi Kano ,  Makio Kato ,  Yuji Kobayashi ,  Satoru Ujihashi ,  Kiyoshi Okumura

发明人： Ryohei Ishikura ,  Takashi Kano ,  Makio Kato ,  Yuji Kobayashi ,  Satoru Ujihashi ,  Kiyoshi Okumura

IPC分类号： C21D7/06 ,  B24C1/10

CPC分类号： B24C1/10 ,  B24C1/086 ,  C21D1/26 ,  C21D7/06 ,  C21D2211/001 ,  C21D2211/008 ,  Y10T29/479

摘要： The object of the present invention is to provide a method for shot peening by which a compressive residual stress that is higher than any achieved by the conventional method can be achieved while the thickness of the processed material that is scraped is suppressed. The method is characterized in that the shot materials are shot against the processed material that has the hardness of 750 HV or more that is calculated from equations (1) to (3) below. The shot materials have Vickers hardness that is higher than the hardness of the processed material by 50 HV to 250 HV. The thickness of the processed material that is to be scraped is suppressed to 5 μm or less. HV(m)={f(C)−f(T,t)}(1−γR/100)+400×γR/100  Equation (1) f(C)=−660C2+1373C+278  Equation (2) f(T,t)=0.05T(log t+17)−318  Equation (3) where C denotes the C (carbon) content in the surface layer that is achieved by carburizing (mass %), T denotes the tempering temperature (K), t denotes the tempering time (hr), and γR denotes the amount of residual austenite (vol. %).

摘要翻译： 本发明的目的是提供一种用于喷丸硬化的方法，通过该方法可以获得高于通过常规方法实现的压缩残余应力，同时抑制被刮除的被处理材料的厚度。 该方法的特征在于，针对由下述等式（1）至（3）计算的具有750HV或更高的硬度的处理材料进行喷丸处理。 喷丸材料的维氏硬度比加工材料的硬度高50HV至250HV。 要被刮削的被处理材料的厚度被抑制在5μm以下。 HV（m）= {f（C）-f（T，t）}（1-γR/ 100）+ 400×γR/ 100等式（1）f（C）= - 660C2 + 1373C + f（T，t）= 0.05T（log t + 17）-318等式（3）其中C表示通过渗碳实现的表面层中的C（碳）含量（质量％），T表示回火温度 K），t表示回火时间（hr），γR表示残留奥氏体量（体积％）。

公开(公告)号：US20100139451A1

公开(公告)日：2010-06-10

申请号：US12630536

申请日：2009-12-03

申请人： Isamu SAITO ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

发明人： Isamu SAITO ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

IPC分类号： F16C3/06 ,  B21K1/08

CPC分类号： F16C3/06 ,  B21K1/08 ,  C23C8/32 ,  Y10T29/49286 ,  Y10T74/2173

摘要： The invention relates to a crankshaft member having high fatigue strength and good bending correctability, and its method of manufacture. The steel made crankshaft member mainly consists of a two-phase structure of ferrite and perlite. The steel includes C, Ni, Mn, and Cr as required elements and Si, Cu, Mo, Ti, V, Nb, Ca, and S as optional elements that may be included, in the amounts of C within the range of 0.20 to 0.50 wt %, Si within the range of 0 to 0.6 wt %, Mn within the range of 0.5 to 1.5 wt %, Cu within the range of 0 to 0.7 wt %, Ni within the range of 0.05 to 1.5 wt %, Cr within the range of 0.05 to 0.45 wt %, and Mo within the range of 0 to 0.5 wt % to satisfy the condition 115≧70 C+8 Si+23 Mn+11 Cu+128 Cr+83 Mo≧50. A portion of the member surface is provided at least with a hard nitride layer having an average hardness within the range of 300 to 450 HV. Lamellar spacing of the perlite is 0.3 μm or less.

摘要翻译： 本发明涉及具有高疲劳强度和良好的弯曲矫正性的曲轴件及其制造方法。 钢制曲轴构件主要由铁素体和珍珠岩的两相结构组成。 所述钢包含C，Ni，Mn和Cr作为要素，Si，Cu，Mo，Ti，V，Nb，Ca和S作为可以包含的任意元素，C的量在0.20〜 0.50重量％，Si在0〜0.6重量％的范围内，Mn在0.5〜1.5重量％的范围内，Cu在0〜0.7重量％的范围内，Ni在0.05〜1.5重量％的范围内，Cr在 0.05〜0.45重量％的范围，Mo在0〜0.5重量％的范围内，满足条件115≥70℃+ 8Si + 23 Mn + 11 Cu + 128 Cr + 83Mo≥50。 构件表面的一部分至少设置有平均硬度在300至450HV范围内的硬质氮化物层。 珍珠岩的层状间隔为0.3μm以下。

公开(公告)号：US20070001269A1

公开(公告)日：2007-01-04

申请号：US11475955

申请日：2006-06-28

申请人： Takashi Kano ,  Kiyoshi Oota

发明人： Takashi Kano ,  Kiyoshi Oota

IPC分类号： H01L23/58

CPC分类号： H01L29/7371 ,  B82Y20/00 ,  H01L29/20 ,  H01L29/452 ,  H01L29/66318 ,  H01L33/02 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/34333

摘要： A nitride semiconductor device includes a nitride semiconductor layer having a main surface, and an ohmic electrode formed on the main surface of the nitride semiconductor layer The ohmic electrode includes a silicon layer formed to contact with the main surface of the nitride semiconductor layer, and a first metal layer formed on the silicon layer.

摘要翻译： 氮化物半导体器件包括具有主表面的氮化物半导体层和形成在氮化物半导体层的主表面上的欧姆电极。欧姆电极包括形成为与氮化物半导体层的主表面接触的硅层，以及 第一金属层形成在硅层上。

公开(公告)号：US08911566B2

公开(公告)日：2014-12-16

申请号：US12958855

申请日：2010-12-02

申请人： Isamu Saito ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

发明人： Isamu Saito ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

IPC分类号： F16C3/06 ,  B21K1/08

CPC分类号： F16C3/06 ,  B21K1/08 ,  C23C8/32 ,  Y10T29/49286 ,  Y10T74/2173

摘要： A nitrocarburized crankshaft member made of a steel that includes C in an amount by weight of 0.25 to 0.32% as a required element and an optional element that may be included, and Fe and inevitable impurities in a remaining portion. The steel-made crankshaft member mainly includes ferrite and perlite, wherein at least a portion of the steel surface thereof having a ferrite surface area of 50% or greater is imparted with a nitrocarburized hard layer. The nitrocarburized hard layer includes a surface compound layer suppressed to a thickness of 10 to 35 μm, and a nitrogen diffusion zone below the surface compound layer having a diffusion depth of 700 μm or greater. The steel includes C, Si, Mn, Cu, Ni, and Cr as the required elements and Mo, N, s-Al, and Ti as the optional elements.

摘要翻译： 由钢制成的氮碳共渗曲轴构件，其包含作为所需元素的重量为0.25〜0.32％的C和可以包含的任选元素，剩余部分中的Fe和不可避免的杂质。 钢制曲轴构件主要包括铁素体和珍珠岩，其中具有铁素体表面积为50％以上的钢表面的至少一部分被赋予了氮碳共渗硬化层。 氮碳共渗硬化层包括被抑制为10〜35μm厚度的表面化合物层和扩散深度为700μm以上的表面化合物层下方的氮扩散区。 钢包含C，Si，Mn，Cu，Ni和Cr作为所需元素，Mo，N，s-Al和Ti作为任选元素。

公开(公告)号：US07751931B2

公开(公告)日：2010-07-06

申请号：US11740396

申请日：2007-04-26

申请人： Takashi Kano

发明人： Takashi Kano

IPC分类号： G06F19/00

CPC分类号： G06F17/5009 ,  G06F2217/42

摘要： A design support apparatus that can easily verify the conveyance design for a flexible medium based on input design information. A transit time is calculated when a flexible medium passes a characteristic point on a conveying path based a conveying conditions that are set.

摘要翻译： 一种设计支持装置，可以根据输入设计信息轻松地验证柔性介质的输送设计。 当柔性介质基于设定的传送条件通过传送路径上的特征点时，计算传播时间。

公开(公告)号：US07338630B2

公开(公告)日：2008-03-04

申请号：US10963492

申请日：2004-10-11

申请人： Takashi Kano ,  Yasuhiro Hazama ,  Junya Asaoka ,  Masaki Shimizu ,  Katsumi Mori ,  Hisashi Endo

发明人： Takashi Kano ,  Yasuhiro Hazama ,  Junya Asaoka ,  Masaki Shimizu ,  Katsumi Mori ,  Hisashi Endo

IPC分类号： C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/14

CPC分类号： C22C38/22 ,  C22C38/02 ,  C22C38/04 ,  F02M55/025 ,  F02M61/168 ,  F02M2200/8069

摘要： The present invention is to provide a free-cutting steel capable of suppressing production of coarse inclusions, and having a high fatigue strength and a desirable machinability. The free-cutting steel aimed at solving the foregoing problems consists essentially of, in % by mass, C: 0.1-0.5%, Si: 0.05-2.5%, Mn: 0.1-3.5%, S: 0.0005-0.004%, Al: 0.01-0.06%, Ti: 0.003-0.01%, O: up to 0.0015%, N: 0.003-0.01%, Bi: 0.015-0.025%, and the balance of Fe and inevitable impurities, wherein the formula (1) below is satisfied: −4.8≦log(([N]−0.0015)×[Ti]0.98)≦−4.3.   formula (1)

摘要翻译： 本发明提供一种能够抑制粗大夹杂物的生产，并且具有高疲劳强度和期望的切削性能的自由切削钢。 旨在解决上述问题的自由切削钢基本上以质量％计含有C：0.1-0.5％，Si：0.05〜2.5％，Mn：0.1-3.5％，S：0.0005〜0.004％，Al： 0.01-0.06％，Ti：0.003-0.01％，O：至多0.0015％，N：0.003-0.01％，Bi：0.015-0.025％，余量为Fe和不可避免的杂质，其中下式（1） 满足：<？in-line-formula description =“In-line formula”end =“lead”？> - 4.8 <= LOG（（[N] -0.0015）x [Ti] <0.98 <= - 4.3。 公式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>