利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

207 条记录 (耗时 0.03 秒)

    Nitride-based semiconductor element
    2.
    发明授权
    Nitride-based semiconductor element 失效
    氮化物半导体元件

    公开(公告)号：US06734503B2

    公开(公告)日：2004-05-11

    申请号：US10211340

    申请日：2002-08-05

    申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

    发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

    IPC分类号： H01L2701

    CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

    摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

    摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。

    Semiconductor Device
    8.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20090174035A1

    公开(公告)日：2009-07-09

    申请号：US12402196

    申请日：2009-03-11

    申请人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01L27/14 ,  H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

    摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

    摘要翻译： 半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层 活动层 氮化物半导体层由半导体衬底的相同构成元件形成。 氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

    Nitride-based semiconductor light-emitting device
    9.
    发明授权
    Nitride-based semiconductor light-emitting device 有权
    氮化物系半导体发光元件

    公开(公告)号：US07485902B2

    公开(公告)日：2009-02-03

    申请号：US10663714

    申请日：2003-09-17

    申请人： Daijiro Inoue ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takashi Kano ,  Tsutomu Yamaguchi

    发明人： Daijiro Inoue ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takashi Kano ,  Tsutomu Yamaguchi

    IPC分类号： H01L27/15

    CPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/38

    摘要： A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.

    摘要翻译： 提供了能够通过降低接触层中的光吸收损失而提高发光效率的氮化物系半导体发光元件。 这种氮化物基半导体发光器件包括形成在衬底上的第一导电型第一氮化物基半导体层，形成在第一氮化物基半导体层上的有源层，由氮化物基半导体层，第二 形成在有源层上的导电型第二氮化物基半导体层，形成在第二氮化物基半导体层上的未掺杂的接触层和形成在未掺杂的接触层上的电极。

    Semiconductor device
    10.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070057337A1

    公开(公告)日：2007-03-15

    申请号：US11518235

    申请日：2006-09-11

    申请人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01L27/14

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

    摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

    摘要翻译： 半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层 活动层 氮化物半导体层由半导体衬底的相同构成元件形成。 氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。