公开(公告)号：US09147776B2

公开(公告)日：2015-09-29

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20150271377A1

公开(公告)日：2015-09-24

申请号：US14222901

申请日：2014-03-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai

IPC: H04N5/232 ,  H04N5/372

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649

Abstract: An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.

Abstract translation: 图像传感器包括具有布置在半导体层中的多个像素的像素阵列。 包括多个滤光器组的滤色器阵列设置在像素阵列上。 每个滤光器光耦合到多个像素中的对应的一个。 多个分组滤波器中的每一个分别包括具有第一，第二，第二和第三颜色的第一，第二，第三和第四滤波器。 金属层设置在像素阵列上方并且被图案化以包括具有尺寸和间距的网孔的金属网，以阻挡具有第四颜色的入射光到达相应的像素。 金属层被图案化以包括没有金属网的开口，以允许入射光到达其它像素。

公开(公告)号：US20150270302A1

公开(公告)日：2015-09-24

申请号：US14222833

申请日：2014-03-24

Applicant: Omnivision Technologies, Inc.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai ,  Dajiang Yang

IPC: H01L27/146 ,  G02B13/00

CPC classification number: H01L27/14627 ,  G02B13/0015 ,  H01L27/14643

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。

公开(公告)号：US20150163418A1

公开(公告)日：2015-06-11

申请号：US14097843

申请日：2013-12-05

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchih Tai

IPC: H04N5/33 ,  H04N9/04

CPC classification number: H04N5/332 ,  H04N5/23245 ,  H04N9/045

Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.

Abstract translation: 用于捕获可见光图像和红外光图像的图像传感器包括具有长度，宽度和高度的半导体衬底，设置在半导体衬底中的多个可见光光电检测器和设置在半导体衬底中的多个组合光电检测器。 多个可见光光电检测器中的每一个在高度方向具有相应的深度，并且多个组合光检测器中的每一个在高度方向上具有大于多个可见光检测器中的每一个的相应深度的相应深度 。

公开(公告)号：US20150097213A1

公开(公告)日：2015-04-09

申请号：US14046645

申请日：2013-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14685

Abstract: Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array.

Abstract translation: 一种装置的实施例，包括像素阵列，该像素阵列包括形成在具有前表面和后表面的衬底中的多个像素，每个像素包括形成在前表面处或附近的感光区域，并从前面延伸到选定的深度 表面。 滤波器阵列耦合到像素阵列，滤光器阵列包括多个单独的滤光器，每个滤光器光学耦合到相应的感光区域，垂直溢流漏极（VOD）位于基板的背面和感光区域之间 阵列中至少有一个像素。

公开(公告)号：US08969775B2

公开(公告)日：2015-03-03

申请号：US13781388

申请日：2013-02-28

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/00 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140299956A1

公开(公告)日：2014-10-09

申请号：US13856993

申请日：2013-04-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20140239351A1

公开(公告)日：2014-08-28

申请号：US13777197

申请日：2013-02-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁上，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

公开(公告)号：US20140239154A1

公开(公告)日：2014-08-28

申请号：US13781388

申请日：2013-02-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140103410A1

公开(公告)日：2014-04-17

申请号：US13649842

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Zhenhong Fu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14609 ,  H01L27/14616

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散（“FD”）区域和传送装置。 感光元件设置在基板层中，用于响应于光积累图像电荷。 FD区域设置在基板层中以从感光元件接收图像电荷。 转印装置设置在感光元件和FD区之间以选择性地将图像电荷从感光元件转移到FD区域。 转移装置包括栅极，掩埋沟道掺杂区域和表面沟道区域。 栅极设置在感光元件和FD区域之间。 掩埋沟道掺杂区域与FD区域相邻并且位于栅极下方。 表面沟道区域设置在掩埋沟道掺杂区域和感光元件之间并且设置在栅极下方。