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40 条记录 (耗时 0.031 秒)

    Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer
    31.
    发明授权
    Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer 有权
    制造具有较长长度的栅极结构，以形成矩形形状的间隔件

    公开(公告)号：US06306710B1

    公开(公告)日：2001-10-23

    申请号：US09498231

    申请日：2000-02-03

    申请人： Wei Long ,  Olov Karlsson ,  Bill Liu ,  Scott Bell

    发明人： Wei Long ,  Olov Karlsson ,  Bill Liu ,  Scott Bell

    IPC分类号： H01L21336

    CPC分类号： H01L29/665 ,  H01L21/28035 ,  H01L21/28114 ,  H01L29/4925

    摘要： The gate structure of the MOSFET of the present invention is formed to have a longer length toward the top of the gate structure such that a spacer having a substantially rectangular shaped is formed at the sidewalls of the gate structure. For fabricating a gate structure of a field effect transistor on a semiconductor substrate, a layer of gate structure material is deposited on the semiconductor substrate. The composition of the layer of gate structure material is adjusted along a depth of the layer of gate structure material for a slower etch rate toward a top of the layer of gate structure material that is further from the semiconductor substrate. The gate structure is then formed by patterning and etching the layer of gate structure material. The slower etch rate toward the top of the layer of gate structure material results in a longer length toward a top of the gate structure that is further from the semiconductor substrate. Spacer dielectric is deposited conformally on exposed surfaces of the gate structure. The spacer dielectric is anisotropically etched such that the spacer dielectric remains on sidewalls of the gate structure. The longer length toward the top of the gate structure results in a substantially rectangular shaped spacer dielectric remaining on the sidewalls of the gate structure. The present invention may be used to particular advantage when the gate structure and the spacer having the rectangular shape are formed as part of a field effect transistor such as a MOSFET.

    摘要翻译： 本发明的MOSFET的栅极结构形成为具有朝向栅极结构的顶部的较长的长度，使得在栅极结构的侧壁处形成具有大致矩形形状的间隔物。 为了在半导体衬底上制造场效应晶体管的栅极结构，在半导体衬底上沉积一层栅极结构材料。 沿着栅极结构材料层的深度调整栅极结构材料层的组成，以便较慢的蚀刻速率朝向离开半导体衬底的栅极结构材料层的顶部。 然后通过对栅极结构材料层进行图案化和蚀刻来形成栅极结构。 朝向栅极结构材料层的顶部的较慢的蚀刻速率导致朝向离开半导体衬底的栅极结构的顶部更长的长度。 间隔电介质保形地沉积在栅极结构的暴露表面上。 间隔电介质被各向异性地蚀刻，使得间隔电介质保留在栅极结构的侧壁上。 朝向栅极结构的顶部的较长的长度导致保留在栅极结构的侧壁上的大致矩形的间隔绝缘体。 当栅极结构和具有矩形形状的间隔物形成为诸如MOSFET的场效应晶体管的一部分时，本发明可以被用于特别的优点。

    VARIABLE-SIZE BED
    36.
    发明申请
    VARIABLE-SIZE BED 有权
    可变尺寸床

    公开(公告)号：US20100325810A1

    公开(公告)日：2010-12-30

    申请号：US12734324

    申请日：2008-10-23

    申请人： Johan Dahlin ,  Claes Lindh ,  Olov Karlsson ,  Håkan Karlsson

    发明人： Johan Dahlin ,  Claes Lindh ,  Olov Karlsson ,  Håkan Karlsson

    IPC分类号： A47C17/80 ,  A47C19/04

    CPC分类号： B62D33/0612 ,  B60N2/24 ,  B60N2/34 ,  B60P3/39

    摘要： The present invention relates to a variable-size bed (10) comprising a mattress core (16) and a base (14), which base is adapted to support at least a portion of the mattress core, wherein the mattress core and base have adjustable widths or lengths and each of the mattress core and base is changeable between an expanded state and a contracted state corresponding to an expanded state and a contracted state of the bed, respectively, and wherein the bed further comprises a cover means adapted to provide covering over the mattress core in both the expanded state and the contracted state of the bed. The present invention also relates to a vehicle comprising such a variable-size bed.

    摘要翻译： 本发明涉及一种包括床垫芯（16）和基座（14）的可变尺寸床（10），该基座适于支撑床垫芯的至少一部分，其中床垫芯和底座具有可调节 宽度或长度，并且床垫芯和基座中的每一个分别在对应于床的膨胀状态和收缩状态的膨胀状态和收缩状态之间是可变的，并且其中床还包括适于提供覆盖物的覆盖装置 床垫核心在扩张状态和床的合同状态。 本发明还涉及一种包括这种可变尺寸床的车辆。

    Lignocellulose product
    37.
    发明授权
    Lignocellulose product 失效
    木质纤维素产品

    公开(公告)号：US07326317B2

    公开(公告)日：2008-02-05

    申请号：US10494469

    申请日：2002-10-31

    申请人： Ulla Westermark ,  Olov Karlsson

    发明人： Ulla Westermark ,  Olov Karlsson

    IPC分类号： D21C9/00 ,  D21J3/00

    CPC分类号： D21J3/00 ,  D21C9/004

    摘要： The invention concerns a process for the production of activated fibres or particles having self-binding properties comprising the steps of treating fibers or particles of lignocellulose containing material by contacting them with an oxidant during a time sufficient for the formation of water soluble reaction products with binding properties and retaining at least a significant part of said water soluble reaction products with the treated fibers or particles. The invention further concerns activated fibers or particles obtainable by the process, a press molded product and a process for the production thereof from activated fibers or particles.

    摘要翻译： 本发明涉及一种生产活性纤维或具有自结合性质的颗粒的方法，其包括以下步骤：通过在足以形成具有结合性的水溶性反应产物的时间内与氧化剂接触来处理含木素纤维素材料的纤维或颗粒 所述水溶性反应产物与所处理的纤维或颗粒保留至少大部分所述水溶性反应产物。 本发明还涉及通过该方法获得的活化纤维或颗粒，压制成型产品以及由活化的纤维或颗粒制备的方法。

    Semiconductor device with silicide source/drain and high-K dielectric
    38.
    发明授权
    Semiconductor device with silicide source/drain and high-K dielectric 有权
    具有硅化物源/漏极和高K电介质的半导体器件

    公开(公告)号：US06894355B1

    公开(公告)日：2005-05-17

    申请号：US10044493

    申请日：2002-01-11

    申请人： Bin Yu ,  Olov Karlsson

    发明人： Bin Yu ,  Olov Karlsson

    IPC分类号： H01L21/28 ,  H01L27/01

    CPC分类号： H01L21/28291

    摘要： A semiconductor device and method of manufacture. The semiconductor device having a silicide source and a silicide drain; a semiconductor body disposed between the source and the drain; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.

    摘要翻译： 半导体器件及其制造方法。 具有硅化物源和硅化物漏极的半导体器件; 设置在源极和漏极之间的半导体本体; 栅电极，其设置在所述主体上并且限定插入在所述源极和所述漏极之间的沟道; 以及由高K材料制成并分离栅电极和主体的栅极电介质。