公开(公告)号：US06277765B1

公开(公告)日：2001-08-21

申请号：US09376510

申请日：1999-08-17

Applicant: Peng Cheng ,  Brian S. Doyle ,  Chien Chiang ,  Mark Thiec-Hien Tran

Inventor： Peng Cheng ,  Brian S. Doyle ,  Chien Chiang ,  Mark Thiec-Hien Tran

IPC: H01L2131

CPC classification number: H01L21/02164 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

Abstract: A low dielectric constant material, suitable for use as an interlayer dielectric in microelectronic structures includes a porous silicon oxide layer. In a further aspect of the present invention, a porous oxide of silicon is formed by the room temperature oxidation of porous silicon. The room temperature oxidation is achieved by exposing a porous silicon layer to a solution of hydrochloric acid, hydrogen peroxide, and water, in the presence of a metal catalyst.

Abstract translation: 适用于微电子结构中的层间电介质的低介电常数材料包括多孔氧化硅层。 在本发明的另一方面，通过多孔硅的室温氧化形成硅的多孔氧化物。 通过在金属催化剂的存在下将多孔硅层暴露于盐酸，过氧化氢和水的溶液来实现室温氧化。

公开(公告)号：US06187694B1

公开(公告)日：2001-02-13

申请号：US08969008

申请日：1997-11-10

Applicant: Peng Cheng ,  Brian S. Doyle

Inventor： Peng Cheng ,  Brian S. Doyle

IPC: H01L21265

CPC classification number: H01L21/28132 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  Y10S438/947

Abstract: A method of fabricating a feature on a substrate is disclosed. In a described embodiment the feature is the gate electrode of an MOS transistor. In this embodiment a polysilicon layer is formed on the substrate. Next, an edge definition layer of silicon nitride is formed on the feature layer. Then, a patterned edge definition layer of silicon dioxide is formed on the first edge definition layer. Then, a silicon nitride spacer is formed adjacent to an edge of the patterned second edge definition layer. Finally, the polysilicon layer is etched, forming the transistor gate electrode from the polysilicon that remains under the spacer.

公开(公告)号：US6162696A

公开(公告)日：2000-12-19

申请号：US160012

申请日：1998-09-24

Applicant: Peng Cheng ,  Brian S. Doyle

Inventor： Peng Cheng ,  Brian S. Doyle

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/331

CPC classification number: H01L21/28132 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of fabricating a feature on a substrate is described. In one embodiment, the fabricated feature is the gate electrode of an MOS transistor. A feature layer is formed on the substrate with a patterned edge definition layer then formed on the feature layer. Next, a spacer layer is formed adjacent to an edge of the patterned edge definition layer. Finally, the feature layer is etched, forming the transistor gate electrode from the feature layer that remains under the spacer.

Abstract translation: 描述了在衬底上制造特征的方法。 在一个实施例中，所制造的特征是MOS晶体管的栅电极。 特征层形成在衬底上，然后形成在特征层上的图案化边缘限定层。 接下来，与图案化边缘限定层的边缘相邻地形成间隔层。 最后，蚀刻特征层，从保留在间隔物下方的特征层形成晶体管栅电极。

公开(公告)号：US11910255B2

公开(公告)日：2024-02-20

申请号：US17273334

申请日：2019-09-27

Applicant: Qualcomm Incorporated ,  Peng Cheng ,  Huichun Liu

Inventor： Peng Cheng ,  Huichun Liu

IPC: H04W72/04 ,  H04W36/00 ,  H04W24/10

CPC classification number: H04W36/0085 ,  H04W24/10 ,  H04W36/0058

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) measure and report cell measurements for neighboring cells to assist the wireless network with handover decisions. In some cases, the UE may be configured to report beam-level measurements for just a subset of neighboring cells instead of each neighboring cell. For example, the UE may measure, or report beam measurements for a subset of the neighboring cells which meet configured criteria or are included in a subset of cells configured by the serving cell. Techniques for configuring and maintaining the subset of cells are described herein. For example, the cells in the subset may be configured by the UE or the serving cell of UE. A cell may also be removed from the subset if the cell does not continue to meet criteria for being included in the subset.

公开(公告)号：US10309847B2

公开(公告)日：2019-06-04

申请号：US15741248

申请日：2016-07-13

Applicant: Peng Cheng ,  Bengt Oelmann ,  Muhammad Nazar Ul Islam

Inventor： Peng Cheng ,  Bengt Oelmann ,  Muhammad Nazar Ul Islam

IPC: G01L3/00 ,  G01L3/04 ,  G01L25/00

Abstract: The torque sensor has a body. A first gastight chamber is defined at least partly by the body. A pressure sensor is connected with the gastight chamber for measuring the pressure in the gastight chamber. A pressure to torque converter is connected to the pressure sensor. The gastight chamber is arranged to change its volume by deformation of the body when the body is subjected to a torque wherein the volume change causes a change of pressure of the enclosed gas in the gastight chamber.

公开(公告)号：US10101059B2

公开(公告)日：2018-10-16

申请号：US12745168

申请日：2008-11-26

Applicant: Hongbin Ma ,  Joseph A. Boswell ,  Peng Cheng

Inventor： Hongbin Ma ,  Joseph A. Boswell ,  Peng Cheng

IPC: F25B33/00 ,  F25B1/08 ,  F25B15/02

Abstract: A thermally driven heat pump includes a low temperature evaporator for evaporating cooling fluid to remove heat A first heat exchanger located at an outlet of a converging/diverging chamber of a first ejector receives a flow of primary fluid vapor and cooling fluid vapor ejected from the first ejector for condensing a portion of the cooling fluid vapor An absorber located in the first heat exchanger absorbs cooling fluid vapor into an absorbing fluid to reduce the pressure in the first heat exchanger A second heat exchanger located at an outlet of a converging/diverging chamber of a second ejector receives primary fluid vapor and cooling fluid vapor ejected from the second ejector for condensing the cooling fluid vapor and the primary fluid vapor A separator in communication with the second ejector, the low temperature evaporator and the primary fluid evaporator separates the primary fluid from the cooling fluid.

公开(公告)号：US20160205579A1

公开(公告)日：2016-07-14

申请号：US14913889

申请日：2014-09-22

Applicant: Peng CHENG ,  Neng WANG ,  Chao WEI ,  Jilei HOU ,  QUALCOMM Incorporated

Inventor： Peng Cheng ,  Neng Wang ,  Chao Wei ,  Wanshi Chen ,  Peter Gaal ,  Hao Xu ,  Jilei Hou

IPC: H04W24/10 ,  H04W76/04 ,  H04W72/04 ,  H04L29/08 ,  H04L5/14 ,  H04L5/00

CPC classification number: H04W24/10 ,  H04L1/0026 ,  H04L5/0007 ,  H04L5/0057 ,  H04L5/14 ,  H04L5/1469 ,  H04L29/08018 ,  H04W72/0413 ,  H04W72/042 ,  H04W72/0446 ,  H04W76/27 ,  H04W88/02 ,  H04W88/08

Abstract: Methods, systems, and devices are described for providing periodic CSI reports and/or aperiodic CSI reports to provide CSI for both anchor and non-anchor TDD subframes in eIMTA. Periodic CSI reports may be provided based on a reference configuration, and aperiodic CSI reports may be provided based on a time of reception of a CSI request and a reference configuration. A UE may determine to report anchor or non-anchor CSI through explicit or implicit signaling. Aperiodic CSI may be used for transmission of anchor subframe CSI reports and periodic CSI may be used for transmission of non-anchor subframe CSI reports, or aperiodic CSI may be used for transmission of non-anchor subframe CSI reports and periodic CSI may be used for transmission of anchor subframe CSI reports. A determination of the reference subframe for aperiodic CSI estimation may be based on a time of receipt of an aperiodic CSI request.

Abstract translation: 描述了用于提供周期性CSI报告和/或非周期性CSI报告以在eIMTA中为锚和非锚定TDD子帧提供CSI的方法，系统和设备。 可以基于参考配置提供周期性CSI报告，并且可以基于接收到CSI请求和参考配置的时间来提供非周期性CSI报告。 UE可以通过显式或隐式信令来确定报告锚或非锚定CSI。 非周期性CSI可以用于发送锚定子帧CSI报告，并且周期性CSI可以用于非锚定子帧CSI报告的传输，或非周期性CSI可以用于非锚定子帧CSI报告的传输，并且周期性CSI可以用于 主播子帧CSI报告的传输。 用于非周期性CSI估计的参考子帧的确定可以基于接收到非周期性CSI请求的时间。

公开(公告)号：US08603883B2

公开(公告)日：2013-12-10

申请号：US13297464

申请日：2011-11-16

Applicant: Kevin K. Chan ,  Peng Cheng ,  Qizhi Liu ,  Ljubo Radic

Inventor： Kevin K. Chan ,  Peng Cheng ,  Qizhi Liu ,  Ljubo Radic

IPC: H01L21/331

CPC classification number: H01L29/73 ,  G06F17/5045 ,  H01L29/1004 ,  H01L29/66272 ,  H01L29/7371

Abstract: Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer.

Abstract translation: 制造双极结型晶体管，双极结型晶体管以及双极结型晶体管的设计结构的方法。 本征基底层的第一部分被掩蔽，同时蚀刻本征基底层的第二部分。 作为掩蔽的结果，本征基底层的第二部分比本征基底层的第一部分薄。 在与本征基层的第一和第二部分分别的接触关系中形成发射极和非本征基层。

公开(公告)号：US08227495B2

公开(公告)日：2012-07-24

申请号：US12541865

申请日：2009-08-14

Applicant: Xin Chen ,  Peng Cheng ,  L. Edward Clemens ,  Jeffrey D. Johnson ,  Jingyuan Ma ,  Alison Murphy ,  Imad Nashashibi ,  Christopher J. Rabbat ,  Jiangao Song ,  Maria E. Wilson ,  Yan Zhu ,  Zuchun Zhao

Inventor： Xin Chen ,  Peng Cheng ,  L. Edward Clemens ,  Jeffrey D. Johnson ,  Jingyuan Ma ,  Alison Murphy ,  Imad Nashashibi ,  Christopher J. Rabbat ,  Jiangao Song ,  Maria E. Wilson ,  Yan Zhu ,  Zuchun Zhao

IPC: A61K31/425

CPC classification number: A61K31/506 ,  A61K31/454 ,  C07D277/42 ,  C07D401/04 ,  C07D401/14 ,  C07D413/04 ,  C07D413/14 ,  C07D417/04 ,  C07D417/14

Abstract: The present disclosure provides 2,4-disubstituted thiazoles of the general structure shown below that are agonists of G-protein coupled receptor (IC-GPCR2). Also, provided are compositions comprising these compounds as well as methods for using these compounds in a variety of applications including diabetes and metabolic disorders.

Abstract translation: 本公开提供了下列通式结构的2,4-二取代噻唑，它是G-蛋白偶联受体（IC-GPCR2）的激动剂。 此外，提供了包含这些化合物的组合物以及在各种应用中使用这些化合物的方法，包括糖尿病和代谢紊乱。

公开(公告)号：US20100087468A1

公开(公告)日：2010-04-08

申请号：US12574861

申请日：2009-10-07

Applicant: Yan ZHU ,  Jingyuan Ma ,  Peng Cheng ,  Zuchun Zhao ,  Francine M. Gregoire ,  Vera A. Rakhmanova

Inventor： Yan ZHU ,  Jingyuan Ma ,  Peng Cheng ,  Zuchun Zhao ,  Francine M. Gregoire ,  Vera A. Rakhmanova

IPC: A61K31/4192 ,  A61K31/426 ,  A61K31/4402 ,  A61P3/00

CPC classification number: C07D263/57 ,  C07D249/06 ,  C07D249/20 ,  C07D403/12 ,  C07D409/10

Abstract: The present invention is directed to certain novel compounds represented by Formula (I) and pharmaceutically acceptable salts, solvates, hydrates and prodrugs thereof. The present invention is also directed to methods of making and using such compounds and pharmaceutical compositions containing such compounds to treat or control a number of diseases mediated by PPAR such as glucose metabolism, lipid metabolism and insulin secretion, specifically Type 2 diabetes, hyperinsulinemia, hyperlipidemia, hyperuricemia, hypercholesteremia, atherosclerosis, one or more risk factors for cardiovascular disease, Syndrome X, hypertriglyceridemia, hyperglycemia, obesity and eating disorders.

Abstract translation: 本发明涉及由式（I）表示的某些新型化合物及其药学上可接受的盐，溶剂合物，水合物和前药。 本发明还涉及制备和使用这些化合物和含有这些化合物的药物组合物的方法，以治疗或控制由PPAR介导的许多疾病，例如葡萄糖代谢，脂质代谢和胰岛素分泌，特别是2型糖尿病，高胰岛素血症，高脂血症 高尿酸血症，高胆固醇血症，动脉粥样硬化，心血管疾病的一个或多个危险因素，X综合征，高甘油三酯血症，高血糖症，肥胖症和进食障碍。