公开(公告)号：US20230230987A1

公开(公告)日：2023-07-20

申请号：US18065992

申请日：2022-12-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Byounghee LEE ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L27/146 ,  H04N25/131

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H04N25/131

Abstract: Imaging systems, and image pixels and related methods. At least one example is an image sensor comprising a plurality of image pixels. Each image pixel may comprise: a color router defining a router collection area on an upper surface; a first photosensitive region beneath the color router; a second photosensitive region beneath the color router; and a third photosensitive region beneath the color router. The color router may be configured to route photons of a first wavelength received at the router collection area to the first photosensitive region, route photons of a second wavelength received at the router collection area to the second photosensitive region, and route photons of a third wavelength received at the router collection area to the third photosensitive region.

公开(公告)号：US20220139982A1

公开(公告)日：2022-05-05

申请号：US17576268

申请日：2022-01-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20210175272A1

公开(公告)日：2021-06-10

申请号：US16948105

申请日：2020-09-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  G02B3/06

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

公开(公告)号：US20190376899A1

公开(公告)日：2019-12-12

申请号：US16005027

申请日：2018-06-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

IPC: G01N21/64

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a biosensor. The biosensor comprises a vertical flow channel that extends through a photodiode, and wherein the photodiode is lateral to the channel's vertical sidewall.

公开(公告)号：US20190214424A1

公开(公告)日：2019-07-11

申请号：US16354862

申请日：2019-03-15

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc SULFRIDGE ,  Vladimir KOROBOV

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469

Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

公开(公告)号：US20190051688A1

公开(公告)日：2019-02-14

申请号：US15676664

申请日：2017-08-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Swarnal BORTHAKUR

IPC: H01L27/146

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

公开(公告)号：US20180204861A1

公开(公告)日：2018-07-19

申请号：US15408839

申请日：2017-01-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: Various embodiments of the present technology may comprise a method and apparatus for an image sensor. The image sensor may comprise a color filter with a convex surface and a corresponding underlying dielectric element. The convex surface of the color filter is parallel to a convex surface of the dielectric element, wherein the convex shape of the color filter is substantially equal to the convex shape of the dielectric element.

公开(公告)号：US20170352698A1

公开(公告)日：2017-12-07

申请号：US15621041

申请日：2017-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR

IPC: H01L27/146 ,  H01L23/31 ,  H01L23/00 ,  H01L21/66

CPC classification number: H01L27/14685 ,  H01L22/32 ,  H01L23/3171 ,  H01L24/04 ,  H01L27/14634 ,  H01L27/14689

Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

公开(公告)号：US20160358966A1

公开(公告)日：2016-12-08

申请号：US14728111

申请日：2015-06-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc SULFRIDGE ,  Vladimir KOROBOV

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469

Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

Abstract translation: 图像传感器。 实现可以包括：包括多个像素的第一裸片; 包括多个晶体管，电容器或两个晶体管和电容器的第二裸片; 包括模拟电路，逻辑电路或模拟和逻辑电路的第三裸片。 第一模具可以混合地结合到第二模具，并且第二模具可以熔合到第三模具。 第二管芯的多个晶体管，电容器或晶体管和电容器可以适于使得能够对第一管芯的多个像素进行操作。 模拟电路，逻辑电路以及模拟电路和逻辑电路可以适于执行信号路由。

公开(公告)号：US20160351609A1

公开(公告)日：2016-12-01

申请号：US14725121

申请日：2015-05-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR

IPC: H01L27/146 ,  H01L31/0232 ,  H04N5/378

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14663 ,  H04N2209/045

Abstract: An imaging system may include an image sensor having an array of image pixels with a photosensitive region that generates image signals in response to light. The array may include photoluminescent material that absorbs light of a first range of wavelengths and emits light of a second range of wavelengths onto the photosensitive region. The first range of wavelengths may correspond to ultraviolet light, and the second range of wavelengths may correspond to visible light. The photoluminescent material may be formed over some or all of the image pixels. The array may include color filter elements that transmit light of a given color to the photosensitive region. The photoluminescent material may be adjusted to have a peak emission intensity at a color of light that corresponds to the given color of light transmitted by a given color filter element.

Abstract translation: 成像系统可以包括具有具有响应于光产生图像信号的光敏区域的图像像素阵列的图像传感器。 该阵列可以包括吸收第一波长范围的光并将第二波长范围的光发射到感光区上的光致发光材料。 第一波长范围可以对应于紫外光，而第二波长范围可对应于可见光。 可以在一些或全部图像像素上形成光致发光材料。 阵列可以包括将给定颜色的光透射到光敏区域的滤色器元件。 可以将光致发光材料调整为具有对应于由给定滤色器元件透射的光的给定颜色的光的颜色的峰值发射强度。