公开(公告)号：US20220139982A1

公开(公告)日：2022-05-05

申请号：US17576268

申请日：2022-01-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20180083058A1

公开(公告)日：2018-03-22

申请号：US15268183

申请日：2016-09-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L27/146 ,  H01L25/065 ,  H01L25/00

Abstract: Various embodiments of the present technology may comprise a method and apparatus for an image sensor with a thermal equalizer for distributing heat. The method and apparatus may comprise a thermal equalizer disposed between a sensor die and a circuit die to prevent uneven heating of the pixels in the sensor die. The method and apparatus may comprise a thermal equalizer integrated within the circuit die.

公开(公告)号：US20240167873A1

公开(公告)日：2024-05-23

申请号：US18056524

申请日：2022-11-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Brian Anthony VAARTSTRA ,  Larry Duane KINSMAN

IPC: G01J3/28 ,  G01D5/24

CPC classification number: G01J3/2803 ,  G01D5/24

Abstract: A package includes an optical sensor die, a support grid structure disposed on the optical sensor die, and an optically transparent cover attached to the support grid structure. A surface of the optical sensor die includes an optically active surface area (OASA) and an edge surface portion lying outside a perimeter of the OASA. The support grid structure disposed on the surface of the optical sensor die includes at least one pillar disposed within the OASA and an edge block disposed on the edge surface portion lying outside the perimeter of the OASA. The optically transparent cover is supported by the support grid structure at a height above the optical sensor die while maintaining an air gap between the optically transparent cover and the OASA.

公开(公告)号：US20180097028A1

公开(公告)日：2018-04-05

申请号：US15285197

申请日：2016-10-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20240145515A1

公开(公告)日：2024-05-02

申请号：US18558593

申请日：2022-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Mario M. PELELLA ,  Chandrasekharan KOTHANDARAMAN ,  Marc Allen SULFRIDGE ,  Yusheng LIN ,  Larry Duane KINSMAN

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L27/14636 ,  H01L24/13 ,  H01L24/32 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/13025 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/05442

Abstract: An integrated circuit package (34, 34′, 34″) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

公开(公告)号：US20230064356A1

公开(公告)日：2023-03-02

申请号：US17822403

申请日：2022-08-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yusheng LIN ,  Swarnal BORTHAKUR ,  Larry Duane KINSMAN

IPC: H01L27/146

Abstract: A package includes an interposer substrate having at least one through-substrate via (TSV) electrically connecting a top surface of the interposer substrate to a bottom surface of the interposer substrate. The package further includes at least one semiconductor die having a top side, a bottom side, and a sidewall. The at least one semiconductor die is disposed on the interposer substrate with the bottom side electrically coupled to the top surface of the interposer substrate. A molding material is disposed on at least on a portion of the at least one semiconductor die, and an array of conductive material is disposed on the bottom surface of the interposer substrate. The array of conductive material forms the external contacts of the package.

公开(公告)号：US20220223641A1

公开(公告)日：2022-07-14

申请号：US17248209

申请日：2021-01-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Yu-Te HSIEH

IPC: H01L27/146 ,  H01L31/18

Abstract: According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, at least one conductor connected to the image sensor die and the substrate, and a light-transmitting member including a substrate member, a first leg member extending from a first edge portion of the substrate member, and a second leg member extending from a second edge portion of the substrate member, the first leg member being coupled to the substrate, the second leg member being coupled to the substrate.

公开(公告)号：US20190189663A1

公开(公告)日：2019-06-20

申请号：US16282547

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20190189662A1

公开(公告)日：2019-06-20

申请号：US16282495

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20180090532A1

公开(公告)日：2018-03-29

申请号：US15276504

申请日：2016-09-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Larry Duane KINSMAN

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/1469

Abstract: An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes. The infrared radiation-blocking layer may be formed between a backside redistribution layer and an epitaxial silicon layer in which pixel structures such as photodiodes and transistors are formed. The infrared radiation-blocking layer may be formed from a pre-existing metal layer between the backside redistribution layer and the epitaxial silicon layer. The infrared radiation-blocking layer may prevent the image sensor from generating inadvertent photocurrents in response to reflected infrared light.