公开(公告)号：US12100747B2

公开(公告)日：2024-09-24

申请号：US17286530

申请日：2019-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yukinori Shima ,  Masataka Nakada ,  Takumi Shigenobu

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  G02F1/1368 ,  H01L29/786 ,  H10K59/12

CPC classification number: H01L29/4908 ,  H01L29/42384 ,  H01L29/66969 ,  G02F1/13685 ,  H01L2029/42388 ,  H01L29/7869 ,  H10K59/12

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device capable of high-voltage driving is provided. A semiconductor device in which a large amount of current can flow is provided. The semiconductor device has a structure including a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The metal oxide layer is positioned between the first insulating layer and the conductive layer. The insulating region is adjacent to the metal oxide layer and is positioned between the first insulating layer and the conductive layer. The semiconductor layer includes a first region in contact with the first insulating layer and overlapping with the metal oxide layer and the conductive layer with the first insulating layer therebetween, a second region in contact with the first insulating layer and overlapping with the insulating region and the conductive layer with the first insulating layer therebetween, a third region in contact with the first insulating layer, and a fourth region in contact with the second insulating layer. The insulating region shows a different permittivity from the first insulating layer.

公开(公告)号：US11968863B2

公开(公告)日：2024-04-23

申请号：US17269042

申请日：2019-08-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao Ikeda ,  Masataka Nakada ,  Tomoya Aoyama

IPC: H10K59/13 ,  H10K59/00 ,  H10K59/121 ,  H10K59/131

CPC classification number: H10K59/131 ,  H10K59/00 ,  H10K59/121

Abstract: A display panel is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a first electrode and a second electrode; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.

公开(公告)号：US11690243B2

公开(公告)日：2023-06-27

申请号：US17067148

申请日：2020-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/5237 ,  H01L51/5243 ,  H01L27/323 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US11329166B2

公开(公告)日：2022-05-10

申请号：US15774930

申请日：2016-11-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Masataka Nakada ,  Masami Jintyou

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/04 ,  H01L51/50 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L27/32

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US11177373B2

公开(公告)日：2021-11-16

申请号：US16344177

申请日：2017-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Katayama ,  Masayoshi Dobashi ,  Masataka Nakada

IPC: H01L29/66 ,  H01L29/786 ,  H01L51/00 ,  H01L27/12 ,  H01L27/32

Abstract: A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.

公开(公告)号：US10345668B2

公开(公告)日：2019-07-09

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1333 ,  G06F3/041 ,  G02F1/1362 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20190189856A1

公开(公告)日：2019-06-20

申请号：US16270252

申请日：2019-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC: H01L33/44 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US10249645B2

公开(公告)日：2019-04-02

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US10079330B2

公开(公告)日：2018-09-18

申请号：US14511742

申请日：2014-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC: H01L33/56 ,  H01L33/44 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US09997637B2

公开(公告)日：2018-06-12

申请号：US15226051

申请日：2016-08-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.