公开(公告)号：US20250015197A1

公开(公告)日：2025-01-09

申请号：US18892792

申请日：2024-09-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20230350949A1

公开(公告)日：2023-11-02

申请号：US17791316

申请日：2020-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei MOMO ,  Kazuki HIGASHI ,  Motoki NAKASHIMA

IPC: G06F16/901 ,  G06F40/284 ,  G06F40/211 ,  G06F16/33 ,  G06F16/93

CPC classification number: G06F16/9024 ,  G06F40/284 ,  G06F40/211 ,  G06F16/3344 ,  G06F16/93

Abstract: A document retrieval system retrieving a document with the concept of the document taken into account is provided. The system includes a processing portion and the processing portion creates a retrieval graph from a retrieval composition. The retrieval graph includes first to m-th retrieval local graphs (m is an integer of greater than or equal to 1), and the retrieval local graphs are each constituted by two nodes and one edge. The processing portion performs retrieval of first to m-th sentences on a reference document. The i-th sentence (i is an integer of greater than or equal to 1 and less than or equal to m) includes one of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the one of the two nodes; the other of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the other of the two nodes; and the edge in the i-th retrieval local graph or a related term or a hyponym of the edge. A mark is assigned to the score of the reference document in accordance with the number of sentences included in the reference document among the first to m-th sentences.

公开(公告)号：US20230335647A1

公开(公告)日：2023-10-19

申请号：US18212773

申请日：2023-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/26 ,  H01L29/04 ,  C01G19/00

CPC classification number: H01L29/7869 ,  H01L29/26 ,  H01L29/04 ,  C01G19/006 ,  H01L29/78696 ,  H01L29/045 ,  C01P2002/72

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US20220273211A1

公开(公告)日：2022-09-01

申请号：US17627194

申请日：2020-07-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Tatsuya OKANO ,  Motoki NAKASHIMA

IPC: A61B5/16

Abstract: A fatigue evaluation system is provided. The fatigue evaluation system includes an accumulation portion, a generation portion, a storage portion, an acquisition portion, and a measurement portion. The accumulation portion has a function of accumulating a plurality of first images and a plurality of second images. The plurality of first images are images of an eye and its surroundings acquired from a side or an oblique direction. The plurality of second images are images of an eye and its surroundings acquired from a front. The generation portion has a function of performing supervised learning and generating a learned model. The storage portion has a function of storing the learned model. The acquisition portion has a function of acquiring a third image. The third image is an image of an eye and its surroundings acquired from a side or an oblique direction. The measurement portion has a function of measuring fatigue from the third image on the basis of the learned model.

公开(公告)号：US20210202538A1

公开(公告)日：2021-07-01

申请号：US17198660

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US20200035711A1

公开(公告)日：2020-01-30

申请号：US16594481

申请日：2019-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20180013002A1

公开(公告)日：2018-01-11

申请号：US15631206

申请日：2017-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01L29/786 ,  H01L29/417 ,  C23C14/08 ,  H01L29/423 ,  C01G1/02

CPC classification number: H01L29/7869 ,  C01G1/02 ,  C23C14/086 ,  H01L29/41725 ,  H01L29/4232 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: A novel metal oxide is provided. A semiconductor device with favorable electrical characteristics is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region includes more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is greater than or equal to 0.2 eV.

公开(公告)号：US20170323789A1

公开(公告)日：2017-11-09

申请号：US15657273

申请日：2017-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20170025544A1

公开(公告)日：2017-01-26

申请号：US15215801

申请日：2016-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract translation: 在包括氧化物半导体的晶体管中，抑制了电特性的变化，提高了可靠性。 晶体管包括在第一绝缘膜上的氧化物半导体膜; 氧化物半导体膜上的第二绝缘膜; 第二绝缘膜上的金属氧化物膜; 金属氧化物膜上的栅电极; 以及氧化物半导体膜和栅极上的第三绝缘膜。 氧化物半导体膜包括与栅电极重叠的沟道区域，与第三绝缘膜接触的源极区域和与第三绝缘膜接触的漏极区域。 源区和漏区含有氢，硼，碳，氮，氟，磷，硫，氯，钛和稀有气体中的一种或多种。

公开(公告)号：US20160351720A1

公开(公告)日：2016-12-01

申请号：US15159032

申请日：2016-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA ,  Tomoki HIRAMATSU

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/133 ,  G02F1/1368 ,  G02F1/1337 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78606 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the oxide semiconductor film, a fourth insulating film over the third insulating film, a second gate electrode over the fourth insulating film, and a fifth insulating film over the second gate electrode. One or more of the second insulating film, the third insulating film, and the fourth insulating film include a halogen element. The halogen element is detected from one or more of a top surface, a bottom surface, and a side surface of the oxide semiconductor film.

Abstract translation: 抑制电特性的变化，提高晶体管的可靠性。 晶体管包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第二绝缘膜，第二绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源极， 与氧化物半导体膜电连接的漏电极，氧化物半导体膜上的第三绝缘膜，第三绝缘膜上的第四绝缘膜，第四绝缘膜上的第二栅电极，以及第二绝缘膜上的第五绝缘膜 。 第二绝缘膜，第三绝缘膜和第四绝缘膜中的一个或多个包括卤素元素。 卤素元素从氧化物半导体膜的顶表面，底表面和侧表面中的一个或多个检测。