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公开(公告)号：US20200035865A1
公开(公告)日：2020-01-30
申请号：US16518169
申请日：2019-07-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Chan Seob SHIN
Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.
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公开(公告)号：US20240429346A1
公开(公告)日：2024-12-26
申请号：US18824779
申请日：2024-09-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Seom Geun LEE , Seong Kyu JANG
Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.
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公开(公告)号：US20240313182A1
公开(公告)日：2024-09-19
申请号：US18663570
申请日：2024-05-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU
IPC: H01L33/62 , H01L25/075 , H01L27/15
CPC classification number: H01L33/62 , H01L25/0756 , H01L27/156
Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.
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公开(公告)号：US20230369301A1
公开(公告)日：2023-11-16
申请号：US18226779
申请日：2023-07-27
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU , Jong Hyeon CHAE
IPC: H01L25/075 , H01L33/42 , H01L33/62
CPC classification number: H01L25/0756 , H01L33/42 , H01L25/0753 , H01L33/62
Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.
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公开(公告)号：US20230197913A1
公开(公告)日：2023-06-22
申请号：US18083212
申请日：2022-12-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Ki Ho PARK , Jong Min JANG , Chae Hon KIM , Sang Min KIM
IPC: H01L33/50 , H01L25/075 , H01L33/22 , H01L33/52 , H01L33/60
CPC classification number: H01L33/505 , H01L25/0753 , H01L33/22 , H01L33/52 , H01L33/60 , H01L33/0093
Abstract: A light emitting device and a light emitting module including the same are disclosed. The light emitting module may include: a circuit board; a plurality of light emitting devices disposed on the circuit board and emitting UV light; a plurality of wavelength conversion portions each disposed on a light emission surface of the light emitting device emitting UV light and converting a wavelength of light emitted from the light emitting device; and a molding portion covering the light emitting devices and the wavelength conversion portions formed on the circuit board. Each of the light emitting devices may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. One surface of the first semiconductor layer may correspond to the light emission surface of the light emitting device. In addition, at least one of the wavelength conversion portions may convert light emitted from the light emitting device into light having a different color than light converted by another wavelength conversion portion.
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Patent Agency Ranking
公开(公告)号：US20230074026A1
公开(公告)日：2023-03-09
申请号：US17987721
申请日：2022-11-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu Jang , Chan Seob Shin , Ho Joon Lee
Abstract: A light emitting device including a plurality of semiconductor layers stacked in a vertical direction, a multiple quantum region disposed between the plurality of semiconductor layer, a first electrode electrically connected to at least one of the semiconductor layers, and an insulation layer disposed on the plurality of semiconductor layers, in which the at least one of the semiconductor layer includes a first surface from which a growth substrate is separated and a side surface forming an inclined angle with respect to the vertical direction, the insulation layer covers the inclined side surface, the first surface includes a textured surface through which light from the multiple quantum region is configured to pass, and the first electrode has a circular shape in a top view and a truncated cone shape in a cross-sectional view.
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公开(公告)号：US20220367429A1
公开(公告)日：2022-11-17
申请号：US17878024
申请日：2022-07-31
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Chan Seob Shin , Ho Joon LEE , Seong Kyu JANG
Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; first, second, and third transparent electrodes in ohmic contact with the first, second, and third LED stacks, respectively; a first electrode pad disposed on the first conductivity type semiconductor layer of the third LED stack; a lower second electrode pad disposed on the third transparent electrode; first, second, and third bump pads disposed on the first LED stack and electrically connected to the first, second, and third LED stacks, respectively; and a common bump pad commonly electrically connected to the first, second, and third LED stacks, in which a lower surface of the first electrode pad is located at a different elevation from a lower surface of the lower second electrode pad.
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公开(公告)号：US20220037570A1
公开(公告)日：2022-02-03
申请号：US17381744
申请日：2021-07-21
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU
IPC: H01L33/62 , H01L25/075 , H01L27/15
Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.
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公开(公告)号：US20210351229A1
公开(公告)日：2021-11-11
申请号：US17314562
申请日：2021-05-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU
IPC: H01L27/15 , H01L33/62 , H01L33/38 , H01L25/075
Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.
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公开(公告)号：US20200258872A1
公开(公告)日：2020-08-13
申请号：US16782594
申请日：2020-02-05
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Chan Seob SHIN , Ho Joon LEE , Seong Kyu JANG
Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.
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