公开(公告)号：US09972405B2

公开(公告)日：2018-05-15

申请号：US15726068

申请日：2017-10-05

Applicant: SK hynix Inc.

Inventor： Tae Hoon Kim

IPC: G11C11/34 ,  G11C29/50 ,  G11C16/34 ,  G11C11/56 ,  G11C29/02 ,  G11C16/26 ,  G11C16/24 ,  G11C29/12

CPC classification number: G11C29/50004 ,  G11C11/5642 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/1204 ,  G11C2029/5004

Abstract: A semiconductor memory device includes memory cells coupled to a word line; and a peripheral circuit configured to read first to kth page data from the memory cells by sequentially applying first to kth test voltages to the word line, where k is a natural number greater than 3, wherein the peripheral circuit is configured to gradually reduce times during which the first to kth test voltages are applied to the word line.

公开(公告)号：US09965205B2

公开(公告)日：2018-05-08

申请号：US14657711

申请日：2015-03-13

Applicant: SK hynix Inc.

Inventor： Young Gyun Kim ,  Tae Hoon Kim

IPC: G06F3/06 ,  G06F21/00 ,  H04L9/06 ,  H04L29/06 ,  H04L9/00

CPC classification number: G06F3/0623 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0673 ,  G06F3/0679 ,  G06F21/00 ,  G06F21/79 ,  H04L9/008 ,  H04L9/06 ,  H04L9/0618 ,  H04L63/0428 ,  H04L63/0435

Abstract: A data storage device includes a conversion block suitable for performing a scramble operation on write data, and generating random write data, wherein the scramble operation includes inversion/non-inversion processing and calculation processing based on a random pattern.

公开(公告)号：US09331055B2

公开(公告)日：2016-05-03

申请号：US14936301

申请日：2015-11-09

Applicant: SK hynix Inc.

Inventor： Tae Hoon Kim

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/91 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/32145 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48229 ,  H01L2224/48465 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/832 ,  H01L2224/8389 ,  H01L2224/85007 ,  H01L2224/85181 ,  H01L2224/852 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8547 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/1434 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package includes a package substrate on which a substrate pad is disposed, a structure disposed over the package substrate, a semiconductor chip disposed over the structure using an adhesive member having a magnetic material layer disposed therein, a chip pad disposed on a top surface of the semiconductor chip, and a bonding wire coupling the substrate pad and the chip pad.

公开(公告)号：US09263149B2

公开(公告)日：2016-02-16

申请号：US13624255

申请日：2012-09-21

Applicant: SK hynix Inc.

Inventor： Tae Hoon Kim

IPC: G11C5/06 ,  G11C17/08 ,  G11C17/16 ,  G11C17/00

CPC classification number: G11C17/08 ,  G11C17/00 ,  G11C17/16

Abstract: A semiconductor device includes a one-time programmable (OTP) memory cell includes a first MOS transistor having a gate coupled to a bit line, a first switching device, coupled to one side of a source/drain of the first MOS transistor, configured to provide a current path for a current supplied to the gate of the first MOS transistor, and a second switching device configured to provide a bias voltage at the other side of the source/drain of the first MOS transistor.

Abstract translation: 半导体器件包括一次性可编程（OTP）存储单元，其包括具有耦合到位线的栅极的第一MOS晶体管，耦合到第一MOS晶体管的源极/漏极的一侧的第一开关器件，被配置为 为提供给第一MOS晶体管的栅极的电流提供电流路径，以及被配置为在第一MOS晶体管的源极/漏极的另一侧提供偏置电压的第二开关器件。

公开(公告)号：US09214452B2

公开(公告)日：2015-12-15

申请号：US14452305

申请日：2014-08-05

Applicant: SK HYNIX INC.

Inventor： Tae Hoon Kim

IPC: H01L23/48 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/91 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/32145 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48229 ,  H01L2224/48465 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/832 ,  H01L2224/8389 ,  H01L2224/85007 ,  H01L2224/85181 ,  H01L2224/852 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8547 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/1434 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package includes a package substrate on which a substrate pad is disposed, a structure disposed over the package substrate, a semiconductor chip disposed over the structure using an adhesive member having a magnetic material layer disposed therein, a chip pad disposed on a top surface of the semiconductor chip, and a bonding wire coupling the substrate pad and the chip pad.

Abstract translation: 一种半导体封装，包括：衬底，其上设置有衬底焊盘的封装衬底;设置在封装衬底上的结构，使用其中设置有磁性材料层的粘合构件设置在结构上的半导体芯片;设置在顶表面上的芯片焊盘 以及连接基板焊盘和芯片焊盘的接合线。