Abstract:
A MEMS triaxial magnetic sensor device includes a sensing structure having: a substrate; an outer frame, which internally defines a window and is elastically coupled to first anchorages fixed with respect to the substrate by first elastic elements; a mobile structure arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements and carries a conductive path for flow of an electric current; and an elastic arrangement operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and the arrangement of elastic elements, first, second, and third sensing movements in response to Lorentz forces from first, second, and third magnetic-field components, respectively. The first, second, and third sensing movements are distinct and decoupled from one another.
Abstract:
An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
Abstract:
An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.
Abstract:
A MEMS triaxial magnetic sensor device includes a sensing structure having: a substrate; an outer frame, which internally defines a window and is elastically coupled to first anchorages fixed with respect to the substrate by first elastic elements; a mobile structure arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements and carries a conductive path for flow of an electric current; and an elastic arrangement operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and the arrangement of elastic elements, first, second, and third sensing movements in response to Lorentz forces from first, second, and third magnetic-field components, respectively. The first, second, and third sensing movements are distinct and decoupled from one another.
Abstract:
An integrated current sensor device includes a supporting structure of conductive material, arranged within a package, and an integrated circuit die including a first and second magnetic-field sensor elements that are arranged along a sensor axis. An electronic circuit operatively coupled to the first and second magnetic-field sensor elements performs a differential detection of electric current. The supporting structure defines a current path for the electric current. The current path includes: a first path portion extending at the first magnetic-field sensor element; a second path portion extending at the second magnetic-field sensor element; and a third path portion that connects the first and second path portions. The first path portion and the second path portion are arranged on opposite sides of the sensor axis, and the third path portion crosses the sensor axis along a transverse axis.
Abstract:
A magnetic field sensor includes a die and a current generator in the die. The current generator generates a driving current. A Lorentz force transducer is also formed in the die and coupled to the current generator to obtain measurements of a magnetic field based upon the Lorentz force. The magnetic field has a resonance frequency and the current generator drives the Lorentz force sensor with the driving current having a non-zero frequency different from the resonance frequency.
Abstract:
An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
Abstract:
A magnetic-field sensor, including: a die, a current generator in the die. The current generator generating a driving current. A Lorentz force transducer also in the die and being configured to obtain measurements of magnetic field based upon the Lorentz force is coupled to the current generator. The transducer having a resonance frequency. The current generator is such that the driving current has a non-zero frequency different from the resonance frequency.
Abstract:
A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.