MEMs inertial sensor with high resistance to stiction

    公开(公告)号:US11543428B2

    公开(公告)日:2023-01-03

    申请号:US16898350

    申请日:2020-06-10

    Abstract: An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

    Microelectromechanical resonator system with improved stability with respect to temperature variations

    公开(公告)号:US10862449B2

    公开(公告)日:2020-12-08

    申请号:US16171885

    申请日:2018-10-26

    Abstract: A MEMS resonator system has a micromechanical resonant structure and an electronic processing circuit including a first resonant loop that excites a first vibrational mode of the structure and generates a first signal at a first resonance frequency. A compensation module compensates, as a function of a measurement of temperature variation, a first variation of the first resonance frequency caused by the temperature variation to generate a clock signal at a desired frequency that is stable relative to temperature. The electronic processing circuit further includes a second resonant loop, which excites a second vibrational mode of the structure and generates a second signal at a second resonance frequency. A temperature-sensing module receives the first and second signals and generates the measurement of temperature variation as a function of the first variation of the first resonance frequency and a second variation of the second resonance frequency caused by the temperature variation.

    MEMS inclinometer having a reduced vibration rectification error

    公开(公告)号:US11993509B2

    公开(公告)日:2024-05-28

    申请号:US17179157

    申请日:2021-02-18

    CPC classification number: B81B3/0018 G01P15/001 B81B2201/0235 G01P2015/0862

    Abstract: A MEMS inclinometer includes a substrate, a first mobile mass and a sensing unit. The sensing unit includes a second mobile mass, a number of elastic elements, which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis, and a number of elastic structures, each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis and to a second axis. The sensing unit further includes a fixed electrode that is fixed with respect to the substrate and a mobile electrode fixed with respect to the second mobile mass, which form a variable capacitor.

    Piezoelectric micromachined ultrasonic transducer

    公开(公告)号:US11969757B2

    公开(公告)日:2024-04-30

    申请号:US17191475

    申请日:2021-03-03

    CPC classification number: B06B1/0666 H10N30/01

    Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

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