MEMS triaxial magnetic sensor with improved configuration

    公开(公告)号:US10705158B2

    公开(公告)日:2020-07-07

    申请号:US16290778

    申请日:2019-03-01

    Abstract: A MEMS triaxial magnetic sensor device includes a sensing structure having: a substrate; an outer frame, which internally defines a window and is elastically coupled to first anchorages fixed with respect to the substrate by first elastic elements; a mobile structure arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements and carries a conductive path for flow of an electric current; and an elastic arrangement operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and the arrangement of elastic elements, first, second, and third sensing movements in response to Lorentz forces from first, second, and third magnetic-field components, respectively. The first, second, and third sensing movements are distinct and decoupled from one another.

    MEMS TRIAXIAL MAGNETIC SENSOR WITH IMPROVED CONFIGURATION

    公开(公告)号:US20180188336A1

    公开(公告)日:2018-07-05

    申请号:US15638204

    申请日:2017-06-29

    CPC classification number: G01R33/0206 G01R33/0286 G01R33/038

    Abstract: A MEMS triaxial magnetic sensor device includes a sensing structure having: a substrate; an outer frame, which internally defines a window and is elastically coupled to first anchorages fixed with respect to the substrate by first elastic elements; a mobile structure arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements and carries a conductive path for flow of an electric current; and an elastic arrangement operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and the arrangement of elastic elements, first, second, and third sensing movements in response to Lorentz forces from first, second, and third magnetic-field components, respectively. The first, second, and third sensing movements are distinct and decoupled from one another.

    INTEGRATED CURRENT SENSOR DEVICE AND CORRESPONDING ELECTRONIC DEVICE

    公开(公告)号:US20180180649A1

    公开(公告)日:2018-06-28

    申请号:US15586903

    申请日:2017-05-04

    CPC classification number: G01R15/202 G01R15/205 G01R15/207 G01R19/0092

    Abstract: An integrated current sensor device includes a supporting structure of conductive material, arranged within a package, and an integrated circuit die including a first and second magnetic-field sensor elements that are arranged along a sensor axis. An electronic circuit operatively coupled to the first and second magnetic-field sensor elements performs a differential detection of electric current. The supporting structure defines a current path for the electric current. The current path includes: a first path portion extending at the first magnetic-field sensor element; a second path portion extending at the second magnetic-field sensor element; and a third path portion that connects the first and second path portions. The first path portion and the second path portion are arranged on opposite sides of the sensor axis, and the third path portion crosses the sensor axis along a transverse axis.

    AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP
    37.
    发明申请
    AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP 审中-公开
    用于检测磁芯的磁场的AMR型集成磁传感器

    公开(公告)号:US20160202329A1

    公开(公告)日:2016-07-14

    申请号:US14947835

    申请日:2015-11-20

    Inventor: Dario Paci

    Abstract: An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.

    Abstract translation: 在绝缘区域覆盖的半导体材料体上形成对垂直磁场敏感的AMR型集成磁阻传感器。 绝缘区域容纳设置/复位线圈和布置在固定/复位线圈上的磁电阻器。 磁阻电阻由平行于优先磁化方向的细长形状的磁阻条形成。 铁磁材料的集中器被布置在绝缘区域的顶部上,作为传感器的最后一个元件,并且由平行于优先磁化方向排列的多个不同的铁磁区域形成。

    INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    39.
    发明申请
    INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    集成多层磁阻传感器及其制造方法

    公开(公告)号:US20140015525A1

    公开(公告)日:2014-01-16

    申请号:US13929635

    申请日:2013-06-27

    CPC classification number: G01R33/096 G01R33/0017 G01R33/0052 G01R33/0206

    Abstract: A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.

    Abstract translation: 磁场传感器包括:芯片,其包括具有覆盖第一表面的第一表面和绝缘层的基板; 第一和第二磁阻器各自延伸到绝缘层中并且具有主轴的磁化和次级磁化轴; 第一磁场发生器,被配置为产生具有沿着所述第一磁电阻的主磁化轴的场线的第一磁场; 第二磁场发生器被配置为产生具有沿着第二磁阻的主磁化轴的场线的第二磁场。 磁化的主轴线彼此横向延伸,磁化的副轴相互横向延伸。 第一和第二磁阻器分别从第一表面延伸到彼此不同的第一距离和第二距离处的绝缘层。

Patent Agency Ranking