公开(公告)号：US10298197B2

公开(公告)日：2019-05-21

申请号：US15487620

申请日：2017-04-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul Lee ,  Jae Chang Lee ,  Chang Hyun Lim ,  Tae Hun Lee ,  Tae Kyung Lee ,  Tae Yoon Kim

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/54 ,  H03H9/56 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.

公开(公告)号：US20180234075A1

公开(公告)日：2018-08-16

申请号：US15809545

申请日：2017-11-10

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Dae Hun Jeong ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02086 ,  H01L41/0472 ,  H01L41/0475 ,  H03H3/02 ,  H03H9/13 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173 ,  H03H9/205 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode connecting member disposed on the substrate; a resonating member including a lower electrode disposed on the lower electrode connecting member, a piezoelectric layer disposed on the lower electrode, and an upper electrode disposed on the piezoelectric layer; and an upper electrode connecting member electrically connecting the upper electrode and the substrate to each other. The upper electrode connecting member is extended from the substrate outside of the resonating member and is connected to a top surface of the upper electrode. The lower electrode connecting member electrically connects the lower electrode and the substrate to each other and includes a ring shape corresponding to a shape of the resonating member so as to support an edge of the resonating member.

公开(公告)号：US11502663B2

公开(公告)日：2022-11-15

申请号：US16441599

申请日：2019-06-14

Applicant: Samsung Electro-Mechanics., Co., Ltd.

Inventor： Tae Yoon Kim ,  Jong Woon Kim ,  Dae Hun Jeong ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H3/02

Abstract: An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar.

公开(公告)号：US11251767B2

公开(公告)日：2022-02-15

申请号：US16983209

申请日：2020-08-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H01L41/047

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10903814B2

公开(公告)日：2021-01-26

申请号：US15789024

申请日：2017-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Chang Hyun Lim ,  Yong Suk Kim ,  Seung Hun Han ,  Sung Jun Lee ,  Sang Kee Yoon ,  Tae Yoon Kim

IPC: H03H9/02 ,  H03H9/17 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

公开(公告)号：US10784837B2

公开(公告)日：2020-09-22

申请号：US15814869

申请日：2017-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H9/12 ,  H03H9/125 ,  H03H9/17 ,  H03H9/13 ,  H03H9/205

Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.

公开(公告)号：US10547285B2

公开(公告)日：2020-01-28

申请号：US15809696

申请日：2017-11-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun Lim ,  Yoon Sok Park ,  Jong Woon Kim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H9/05 ,  H03H9/02 ,  H03H3/02

Abstract: A bulk acoustic wave resonator includes a substrate including a cavity groove, a membrane layer disposed above the substrate and including a convex portion. And a lower electrode including a portion thereof disposed on the convex portion. The bulk acoustic wave resonator also includes a piezoelectric layer configured so that a portion of the piezoelectric layer is disposed above the convex portion, and an upper electrode disposed on the piezoelectric layer. A first space formed by the cavity groove and a second space formed by the convex portion form a cavity, the cavity groove is disposed below an active region, and the convex portion comprises an inclined surface disposed outside of the cavity groove.

公开(公告)号：US10541669B2

公开(公告)日：2020-01-21

申请号：US15486806

申请日：2017-04-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Hwa Sun Lee ,  Hyun Min Hwang ,  Moon Chul Lee ,  Sung Sun Kim ,  Tae Yoon Kim

IPC: H03H9/17 ,  H01L41/047 ,  H01L41/18

Abstract: A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.

公开(公告)号：US10541665B2

公开(公告)日：2020-01-21

申请号：US15876791

申请日：2018-01-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul Lee ,  Tah Joon Park ,  Jae Chang Lee ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Hwa Sun Lee ,  Tae Hun Lee ,  Hyun Min Hwang ,  Tae Kyung Lee

IPC: H02H9/02 ,  H03H9/60 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H9/205 ,  H03H9/02

Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

公开(公告)号：US10476463B2

公开(公告)日：2019-11-12

申请号：US15815966

申请日：2017-11-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H3/007 ,  H03H3/04 ,  H03H7/42 ,  H03H9/00 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.