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    MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS
    32.
    发明申请
    MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS 有权
    具有磁性结的插入层和磁记录的磁性连接

    公开(公告)号：US20140264671A1

    公开(公告)日：2014-09-18

    申请号：US14048329

    申请日：2013-10-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/02 ,  H01L43/10

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

    Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMALLY STABLE AND EASY TO SWITCH MAGNETIC FREE LAYER
    33.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMALLY STABLE AND EASY TO SWITCH MAGNETIC FREE LAYER 有权
    用于提供具有稳定且易于切换无磁层的磁轭的方法和系统

    公开(公告)号：US20140151831A1

    公开(公告)日：2014-06-05

    申请号：US14026386

    申请日：2013-09-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eugene Chen ,  Dmytro Apalkov

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/12

    Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括多个子区域。 每个子区具有磁热稳定性常数。 这些子区域被铁磁耦合，使得自由层具有总的磁热稳定性常数。 磁性热稳定性常数使得每个子区域在工作温度下是磁不热的。 总磁热稳定性常数使得自由层在工作温度下是磁性热稳定的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE
    35.
    发明申请
    DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE 有权

    公开(公告)号：US20220068538A1

    公开(公告)日：2022-03-03

    申请号：US17127695

    申请日：2020-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Jaewoo Jeong ,  Ikhtiar ,  Roman Chepulskyy

    IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.

    RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL
    36.
    发明申请
    RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL 有权

    公开(公告)号：US20220068338A1

    公开(公告)日：2022-03-03

    申请号：US17127732

    申请日：2020-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Sungchul Lee ,  Roman Chepulskyy

    IPC: G11C11/16 ,  G11C11/18

    Abstract: A system including a racetrack memory layer is described. The racetrack memory layer includes a plurality of bit locations and a plurality of domain wall traps. The bit locations are interleaved with the domain wall traps. Each of the bit locations has a first domain wall speed. Each of the domain wall traps has a second domain wall speed. The first domain wall speed is greater than the second domain wall speed. The first domain wall speed and the second domain wall speed are due to at least one of a Dzyaloshinskii-Moriya interaction variation in the racetrack memory layer, a synthetic antiferromagnetic effect variation in the racetrack memory layer, and a separation distance for the plurality of domain wall traps corresponding to an intrinsic travel distance. The separation distance is less than one hundred nanometers.

    Method and system for providing a magnetic junction having a low damping hybrid free layer
    37.
    发明授权
    Method and system for providing a magnetic junction having a low damping hybrid free layer 有权

    公开(公告)号：US10439133B2

    公开(公告)日：2019-10-08

    申请号：US15603402

    申请日：2017-05-23

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

    IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

    Vertical spin orbit torque devices
    38.
    发明授权
    Vertical spin orbit torque devices 有权

    公开(公告)号：US10411184B1

    公开(公告)日：2019-09-10

    申请号：US15968514

    申请日：2018-05-01

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Vladimir Nikitin ,  Dmytro Apalkov

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12

    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.

    Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications
    39.
    发明授权
    Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications 有权

    公开(公告)号：US10205092B2

    公开(公告)日：2019-02-12

    申请号：US16005617

    申请日：2018-06-11

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  H01F41/30 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

    Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

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