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公开(公告)号：US20180277748A1
公开(公告)日：2018-09-27
申请号：US15465050
申请日：2017-03-21
Inventor： Guohan Hu , Younghyun Kim , Chandrasekara Kothandaraman , Jeong-Heon Park
CPC classification number: H01L43/08 , H01L27/226 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a fixed magnetic layer, a tunnel barrier layer on the fixed magnetic layer, and a free magnetic layer formed on the tunnel barrier layer. A boron-segregating layer is formed directly on the free magnetic layer. The memory stack is etched into a pillar. A top electrode is formed over the pillar.
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公开(公告)号：US20170338402A1
公开(公告)日：2017-11-23
申请号：US15157795
申请日：2016-05-18
Inventor： Guohan Hu , Kwangseok Kim , Younghyun Kim , Jung-Hyuk Lee , Jeong-Heon Park
Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer on the non-magnetic barrier layer and the magnetic free layer on the non-magnetic barrier layer, forming an oxide cap layer on the magnetic free layer, and forming a noble metal cap layer on the oxide cap layer.
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公开(公告)号：US09799823B1
公开(公告)日：2017-10-24
申请号：US15094059
申请日：2016-04-08
Inventor： Guohan Hu , Kwangseok Kim , Younghyun Kim , Junghyuk Lee , Luqiao Liu , Jeong-Heon Park
Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.
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34.发明申请公开(公告)号：US20170186944A1
公开(公告)日：2017-06-29
申请号：US14982986
申请日：2015-12-29
Inventor： Anthony J. Annunziata , Gen P. Lauer , JungHyuk Lee , Jeong-Heon Park , Daniel C. Worledge
Abstract: A method of making a MRAM device includes forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction; wherein the exposing of the magnetic tunnel junction to hydrogen plasma is performed at a temperature from about 150 to about 250° C. An MRAM device including an encapsulating layer comprising either silicon nitride or aluminum oxide is also provided.
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35.发明申请公开(公告)号：US20170186943A1
公开(公告)日：2017-06-29
申请号：US14982540
申请日：2015-12-29
Inventor： Anthony J. Annunziata , Marinus Hopstaken , Chandrasekara Kothandaraman , JungHyuk Lee , Deborah A. Neumayer , Jeong-Heon Park
Abstract: Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.
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Patent Agency Ranking
公开(公告)号：US11205679B2
公开(公告)日：2021-12-21
申请号：US16794845
申请日：2020-02-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
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公开(公告)号：US10714678B2
公开(公告)日：2020-07-14
申请号：US16727986
申请日：2019-12-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Sung Park , Woo-Jin Kim , Jeong-Heon Park , Se-Chung Oh , Joon-Myoung Lee , Hyun Cho
Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.
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公开(公告)号：US10468455B2
公开(公告)日：2019-11-05
申请号：US15096864
申请日：2016-04-12
Inventor： Guohan Hu , Younghyun Kim , Jeong-Heon Park , Daniel Worledge
Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
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39.发明申请公开(公告)号：US20180358066A1
公开(公告)日：2018-12-13
申请号：US15616297
申请日：2017-06-07
Inventor： Guohan Hu , Jeong-Heon Park , Daniel C. Worledge
Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.
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公开(公告)号：US20170294482A1
公开(公告)日：2017-10-12
申请号：US15096864
申请日：2016-04-12
Inventor： Guohan Hu , Younghyun Kim , Jeong-Heon Park , Daniel Worledge
CPC classification number: H01L27/226 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
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