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    Variable resistance memory device
    1.
    发明授权
    Variable resistance memory device 有权

    公开(公告)号：US11706931B2

    公开(公告)日：2023-07-18

    申请号：US17230029

    申请日：2021-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Hoon Kim ,  Sang Hwan Park ,  Yong-Sung Park ,  Hyeonwoo Seo ,  Se Chung Oh ,  Hyun Cho

    IPC: H10B61/00 ,  H10B63/00

    CPC classification number: H10B61/22 ,  H10B63/34 ,  H10B63/845

    Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

    Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same
    3.
    发明授权
    Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same 有权
    在基板上形成外延层的方法，以及用于执行该外延层的装置和系统

    公开(公告)号：US09269578B2

    公开(公告)日：2016-02-23

    申请号：US14152191

    申请日：2014-01-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06

    CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

    Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

    Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

    Substrate processing apparatus
    4.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US11293091B2

    公开(公告)日：2022-04-05

    申请号：US16862791

    申请日：2020-04-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joon-Myoung Lee ,  Yong-Sung Park ,  Whan-Kyun Kim ,  Se-Chung Oh ,  Young-Man Jang

    IPC: C23C14/34 ,  H01J37/32 ,  C23C16/455

    Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

    Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same
    7.
    发明授权
    Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same 有权
    在基板上形成外延层的方法，以及用于执行该外延层的装置和系统

    公开(公告)号：US09589795B2

    公开(公告)日：2017-03-07

    申请号：US14994120

    申请日：2016-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

    IPC: C23C16/00 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06 ,  H01L21/3065

    CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

    Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

    Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

    APPARATUS AND METHOD FOR DETERMINING SOURCE DEVICE IN CONTENTS SHARING SYSTEM
    9.
    发明申请
    APPARATUS AND METHOD FOR DETERMINING SOURCE DEVICE IN CONTENTS SHARING SYSTEM 有权
    用于确定共享系统中的源设备的装置和方法

    公开(公告)号：US20130246616A1

    公开(公告)日：2013-09-19

    申请号：US13838549

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTUE OF SCIENCE AND TECHNOLOGY

    Inventor： Yongsuk Park ,  Sun-Mi Kim ,  Dan-Keun Sung ,  Chan-Hyun Youn ,  Jin-Won Kim ,  Ji-Young Cha ,  Tae-Hoon Kim ,  Dong-Ki Kang ,  Hee-Jae Kim ,  Yong-Sung Park ,  Young-Joo Han

    IPC: H04L12/70

    CPC classification number: H04L47/808 ,  H04L47/19 ,  H04L67/1008 ,  H04L67/101 ,  H04L67/1063 ,  H04L67/327 ,  H04W4/80

    Abstract: A method for determining a source and a transmission path to provide content includes receiving a message comprising at least one of channel information of a link between a request device which requests content download and a central management device, available resource amount information of a candidate device, channel information of a link between the candidate device and the central management device, and channel information of a link between the request device and one candidate device. The method also includes determining a source device and the transmission path for providing the content to the request device using an available resource amount of the candidate device, a data rate of the link between the request device and the central management device, a data rate of the link between the request device and the candidate device, and a data rate of the link between the candidate device and the central management device.

    Abstract translation: 用于确定提供内容的源和传输路径的方法包括接收包括请求内容下载的请求设备和中央管理设备之间的链路的信道信息中的至少一个的消息，候选设备的可用资源量信息， 候选设备和中央管理设备之间的链路的信道信息，以及请求设备和一个候选设备之间的链路的信道信息。 该方法还包括使用候选设备的可用资源量，请求设备和中央管理设备之间的链路的数据速率，确定源设备和传输路径，用于向请求设备提供内容，数据速率为 请求设备和候选设备之间的链路以及候选设备与中央管理设备之间的链路的数据速率。

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