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公开(公告)号：US07866036B2
公开(公告)日：2011-01-11
申请号：US12250652
申请日：2008-10-14
Applicant: Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, Jr.
Inventor： Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, Jr.
CPC classification number: G02B26/0841 , G02B26/0833 , Y10T29/49155
Abstract: A micromirror device and a method of making the same are disclosed herein. The micromirror device comprises a mirror plate, hinge, and post each having an electrically conductive layer. One of the hinge, mirror plate, and post further comprises an electrically insulating layer. To enable the electrical connections between the conducting layers of the hinge, mirror plate, and post, the insulating layer is patterned.
Abstract translation: 本文公开了一种微镜器件及其制造方法。 微镜装置包括各自具有导电层的镜板，铰链和柱。 铰链，镜板和柱中的一个还包括电绝缘层。 为了实现铰链，镜板和柱的导电层之间的电连接，绝缘层被图案化。
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32.发明授权公开(公告)号：US06523961B2
公开(公告)日：2003-02-25
申请号：US09732445
申请日：2000-12-07
Applicant: Fedor A. Ilkov , Satyadev R. Patel , Peter W. Richards , John K. Stockton
Inventor： Fedor A. Ilkov , Satyadev R. Patel , Peter W. Richards , John K. Stockton
IPC: G03B2128
CPC classification number: G02B26/0841 , B82Y30/00
Abstract: In order to minimize light diffraction along the direction of switching and more particularly light diffraction into the acceptance cone of the projection optics, in the present invention, mirrors are provided which are not rectangular. Also, in order to minimize the cost of the illumination optics and the size of the display unit of the present invention, the light source is placed orthogonal to the rows (or columns) of the array, and/or the light source is placed orthogonal to a side of the frame defining the active area of the array. The incident light beam, though orthogonal to the sides of the active area, are not however, orthogonal to any substantial portion of sides of the individual mirrors in the array. Orthogonal sides cause incident light to diffract along the direction of mirror switching, and result in light ‘leakage’ into the on-state even if the mirror is in the off-state. This light diffraction decreases the contrast ratio of the mirror. The mirrors of the present invention result in an improved contrast ratio, and the arrangement of the light source to mirror array in the present invention results in a more compact system.
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公开(公告)号：US07514012B2
公开(公告)日：2009-04-07
申请号：US10766776
申请日：2004-01-27
Applicant: Jonathan Doan , Satyadev R. Patel , Dmitri Simonian
Inventor： Jonathan Doan , Satyadev R. Patel , Dmitri Simonian
CPC classification number: B81C1/00682 , B81B2201/042 , G02B26/0841
Abstract: The present invention discloses a method for processing a deformable element of a microstructure for reducing the plastic deformation by oxidizing the deformable element. The method of the present invention can be performed at a variety of stages of the fabrication and packaging processes.
Abstract translation: 本发明公开了一种用于通过氧化可变形元件来处理微结构的可变形元件以减少塑性变形的方法。 本发明的方法可以在制造和包装过程的各个阶段进行。
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公开(公告)号：US07189332B2
公开(公告)日：2007-03-13
申请号：US10269149
申请日：2002-10-11
Applicant: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
Inventor： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
IPC: C23F3/12
CPC classification number: H01J37/32963 , B81C1/00476 , B81C1/00587 , B81C99/0065 , B81C2201/0132 , B81C2201/0138 , H01J37/32449 , H01J37/32935
Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.
Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。
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35.发明授权公开(公告)号：US06949202B1
公开(公告)日：2005-09-27
申请号：US09649569
申请日：2000-08-28
Applicant: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald
Inventor： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald
CPC classification number: C23F1/08 , B81C1/00587 , B81C99/0025 , B81C2201/0138 , B82Y30/00 , H01L21/67017
Abstract: Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.
Abstract translation: 通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触而从工件材料中添加或除去层或区域的工艺。 循环由不具有接触工艺气体的滑动或研磨部件的泵以及泵中的任何湿的（例如油）密封件或吹扫气体来实现。 改进的处理可以通过包含挡板，多孔板或两者的处理室来实现，该处理室适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。 在某些实施方案中，将稀释气体加入再循环回路并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗入再循环回路中。 此外，工艺气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品中添加或除去材料特别有用。
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Patent Agency Ranking
公开(公告)号：US06942811B2
公开(公告)日：2005-09-13
申请号：US09954864
申请日：2001-09-17
Applicant: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi
Inventor： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi
CPC classification number: B81B3/00 , B81B2201/045 , B81C1/00476 , B81C1/00531 , B81C1/00595 , B81C99/0025 , B81C2201/0138 , B82Y30/00 , H01L21/3065 , H01L21/3081 , H01L21/32135
Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.
Abstract translation: 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，相对于微结构的其它部分，通过减慢蚀刻速率对硅部分具有更大的选择性 。 蚀刻速率优选为30um / hr或更小，并且可以为3um / hr或甚至更小。 通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。 优选地，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间段内完成蚀刻，同时仍然实现相同的改进 选择性。 通过精确确定去除步骤的终点的能力也可以增强蚀刻工艺。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 此外，通过掺杂牺牲材料可以改善蚀刻选择性。
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公开(公告)号：US06952302B2
公开(公告)日：2005-10-04
申请号：US10365951
申请日：2003-02-12
Applicant: Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, Jr.
Inventor： Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, Jr.
CPC classification number: G02B26/0841 , G02B26/0833
Abstract: A method and spatial light modulator are provided herein. The spatial light modulator has a higher resolution and an increased fill factor. The spatial light modulator also provides an increased contrast ratio. Furthermore, the spatial light modulator of the present invention can be operated in the absence of polarized light and that has improved electro-mechanical performance and robustness with respect to manufacturing. A method and its alternative are disclosed herein by the present invention for manufacturing the spatial light modulator.
Abstract translation: 本文提供了一种方法和空间光调制器。 空间光调制器具有更高的分辨率和更高的填充因子。 空间光调制器还提供增加的对比度。 此外，本发明的空间光调制器可以在没有偏振光的情况下操作，并且在制造方面具有改善的机电性能和鲁棒性。 通过本发明在此公开了用于制造空间光调制器的方法及其替代方案。
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38.发明授权公开(公告)号：US06913942B2
公开(公告)日：2005-07-05
申请号：US10402889
申请日：2003-03-28
Applicant: Satyadev R. Patel , Jonathan C. Doan
Inventor： Satyadev R. Patel , Jonathan C. Doan
IPC: B81B20060101 , B81B3/00 , H01L21/00
CPC classification number: B81C1/00476 , B81B2201/042 , B81C2201/0107
Abstract: A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.
Abstract translation: 本文公开了牺牲层和在制造微机电装置中施加所述牺牲层的方法。 牺牲层包括早期的过渡金属。 具体地，牺牲层包括早期过渡金属元素，早期过渡金属合金或早期过渡金属硅化物。
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公开(公告)号：US06290864B1
公开(公告)日：2001-09-18
申请号：US09427841
申请日：1999-10-26
Applicant: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald
Inventor： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald
IPC: B81C500
CPC classification number: H01L21/32135 , B81C1/00595 , H01L21/3065 , H01L21/3081
Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by the addition of non-etchant gaseous additives to the etchant gas. An additional discovery is that non-etchant gaseous additives that have a molar averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity.
Abstract translation: 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，通过添加非金属氧化物，相对于微观结构的其它部分，对硅部分具有更大的选择性 提取气态添加剂到蚀刻剂气体。 另外的发现是，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气体添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间内完成蚀刻，同时仍然实现 同样的选择性提高。
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公开(公告)号：US20090039536A1
公开(公告)日：2009-02-12
申请号：US12250652
申请日：2008-10-14
Applicant: Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, JR.
Inventor： Jonathan C. Doan , Satyadev R. Patel , Robert M. Duboc, JR.
IPC: B29D11/00
CPC classification number: G02B26/0841 , G02B26/0833 , Y10T29/49155
Abstract: A micromirror device and a method of making the same are disclosed herein. The micromirror device comprises a mirror plate, hinge, and post each having an electrically conductive layer. One of the hinge, mirror plate, and post further comprises an electrically insulating layer. To enable the electrical connections between the conducting layers of the hinge, mirror plate, and post, the insulating layer is patterned.
Abstract translation: 本文公开了一种微镜器件及其制造方法。 微镜装置包括各自具有导电层的镜板，铰链和柱。 铰链，镜板和柱中的一个还包括电绝缘层。 为了实现铰链，镜板和柱的导电层之间的电连接，绝缘层被图案化。
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