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8 条记录 (耗时 0.016 秒)

    Microdevice assembly having a fine grain getter layer for maintaining vacuum
    3.
    发明授权
    Microdevice assembly having a fine grain getter layer for maintaining vacuum 失效
    具有用于保持真空的细颗粒吸气剂层的微装置组件

    公开(公告)号：US06867543B2

    公开(公告)日：2005-03-15

    申请号：US10403637

    申请日：2003-03-31

    申请人： Joe P. Wang ,  Cheryl B. Field ,  Michael Pfeifer

    发明人： Joe P. Wang ,  Cheryl B. Field ,  Michael Pfeifer

    IPC分类号： B81B20060101 ,  B81B1/00 ,  B81B7/00 ,  H01J9/38 ,  H01J19/70

    CPC分类号： B81B7/0038 ,  H01J19/70 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2924/00014

    摘要： A microdevice assembly (20) that includes a device microstructure (22), a housing (30), and a fine grain getter layer (40). The housing (30) has a base portion (32) and a lid (34). The device microstructure (22) is attached to the base portion (32) and the lid (34) is hermetically sealed to the base portion (32). The housing (30) defines a cavity (38) surrounding the device microstructure (22). The fine grain getter layer (40) is on an interior side (42) of the lid (34) for maintaining a vacuum in the cavity (38) surrounding the device microstructure (22). The lid (34) may be made of metal or have at least a metallic surface in the region where the fine grain getter layer (40) is applied. The fine grain getter layer (40) has a sub-micron grain size. There is also a method for making the microdevice assembly (20).

    摘要翻译： 包括器件微结构（22），壳体（30）和细颗粒吸气剂层（40）的微器件组件（20）。 壳体（30）具有基部（32）和盖（34）。 装置微结构（22）附接到基部（32），并且盖（34）被气密地密封到基部（32）。 壳体（30）限定围绕器件微结构（22）的空腔（38）。 细颗粒吸气剂层（40）位于盖（34）的内侧（42）上，用于在包围装置微结构（22）的空腔（38）内保持真空。 盖（34）可以由金属制成，或者在施加微粒吸气剂层（40）的区域中至少具有金属表面。 细颗粒吸收剂层（40）具有亚微米粒度。 还有一种制造微型装置组件（20）的方法。

    Process for producing microelectromechanical components and a housed microelectromechanical component
    5.
    发明申请
    Process for producing microelectromechanical components and a housed microelectromechanical component 失效
    用于生产微电子机械部件和容纳的微机电部件的方法

    公开(公告)号：US20050064644A1

    公开(公告)日：2005-03-24

    申请号：US10994659

    申请日：2004-11-22

    申请人： Jurgen Leib ,  Florian Bieck

    发明人： Jurgen Leib ,  Florian Bieck

    IPC分类号： B81C1/00 ,  B81B20060101 ,  B81B7/00 ,  B81B7/02 ,  H01L21/00 ,  H01L21/76 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/14 ,  H01L29/82

    CPC分类号： B81C1/00301 ,  B81B2201/047 ,  B81B2207/096

    摘要： A process produces microelectromechanical components from a substrate that has a first side and a second side which is substantially opposite from the first side, and at least the first side has at least one microelectromechanical element. The process includes the step of providing at least one conductive passage into the substrate, connecting the first side to the second side, and securing at least one support to the first side of the substrate, with the at least one electrically conductive passage uncovered by thinning the substrate material with the mechanical stability being ensured by the support.

    摘要翻译： 一种方法从基板产生微电子机械部件，该基板具有与第一侧基本相反的第一侧和第二侧，并且至少第一侧具有至少一个微机电元件。 该方法包括以下步骤：将至少一个导电通道提供到衬底中，将第一侧连接到第二侧，以及将至少一个支撑件固定到衬底的第一侧，其中至少一个导电通道被薄化覆盖 具有机械稳定性的基板材料由支撑件确保。

    Method of patterning photoresist on a wafer using a transmission mask with a carbon layer
    6.
    发明授权
    Method of patterning photoresist on a wafer using a transmission mask with a carbon layer 有权
    使用具有碳层的透射掩模在晶片上图案化光刻胶的方法

    公开(公告)号：US06939650B2

    公开(公告)日：2005-09-06

    申请号：US10346623

    申请日：2003-01-17

    申请人： James R. Wasson ,  Pawitter Mangat

    发明人： James R. Wasson ,  Pawitter Mangat

    IPC分类号： B81B20060101 ,  G03C5/00 ,  G03F1/00 ,  G03F1/58 ,  G03F1/72 ,  G03F1/74 ,  G03F7/00 ,  G03F9/00

    CPC分类号： G03F1/74 ,  G03F1/50 ,  G03F1/58 ,  G03F1/72

    摘要： A photoresist layer on a semiconductor wafer is patterned using a mask with an absorbing layer that has been repaired by using an additional light-absorbing carbon layer that collects ions that are used in the repair process. After the repair has been completed, the ions that are present in the carbon layer are removed by removing the portion of the carbon layer that is not covered by the absorbing layer. Thus, the absorbing layer, which contains the pattern that is to be exposed on the photoresist layer, also acts as a mask in the removal of the portion of the carbon layer that contains the ions. Thereby the ions that are opaque at the particular wavelength being used are removed from the areas where light is intended to pass through the mask to the photoresist. The buffer layer is made absorbing to avoid problems with reflections at interfaces thereof.

    摘要翻译： 使用具有吸收层的掩模对半导体晶片上的光致抗蚀剂层进行图案化，该吸收层已经通过使用收集在修复过程中使用的离子的附加的光吸收碳层进行修复。 在修复完成后，通过除去未被吸收层覆盖的碳层的部分来除去存在于碳层中的离子。 因此，含有要在光致抗蚀剂层上露出的图案的吸收层也用作去除含有离子的碳层部分的掩模。 因此，在所要使用的特定波长处不透明的离子从光要通过掩模的区域去除光致抗蚀剂。 缓冲层被吸收以避免其界面处的反射问题。