公开(公告)号：US20130292670A1

公开(公告)日：2013-11-07

申请号：US13936257

申请日：2013-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd

Inventor： Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. The field effect transistor including such an In—Si—Zn—O film can withstand heat treatment at a high temperature and is effective against −BT stress.

Abstract translation: 本发明的目的是提供一种低载体氧化物半导体材料，其具有优异的载流子浓度和稳定性的可控性，并且提供包括该氧化物半导体材料的场效应晶体管。 使用包含铟，硅和锌的氧化物作为氧化物半导体材料。 这里，氧化物半导体膜中的硅含量大于或等于4摩尔％且小于或等于8摩尔％。 包含这种In-Si-Zn-O膜的场效应晶体管可以承受高温下的热处理，对-BT应力有效。

公开(公告)号：US20130157398A1

公开(公告)日：2013-06-20

申请号：US13755614

申请日：2013-01-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiko HAYAKAWA ,  Satoshi MURAKAMI ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L33/44

CPC classification number: H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

公开(公告)号：US20250142891A1

公开(公告)日：2025-05-01

申请号：US19004596

申请日：2024-12-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H10D30/67 ,  G09G3/36 ,  H10D86/40 ,  H10D86/60

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

公开(公告)号：US20240162351A1

公开(公告)日：2024-05-16

申请号：US18509825

申请日：2023-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US20240145599A1

公开(公告)日：2024-05-02

申请号：US18407630

申请日：2024-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L27/1225

Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

公开(公告)号：US20240055533A1

公开(公告)日：2024-02-15

申请号：US18383526

申请日：2023-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US20240038985A1

公开(公告)日：2024-02-01

申请号：US18356310

申请日：2023-07-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Kazutaka KURIKI

IPC: H01M4/525 ,  H01M4/66 ,  H01M4/1315 ,  H01M50/178 ,  H01M50/105

CPC classification number: H01M4/525 ,  H01M4/663 ,  H01M4/1315 ,  H01M50/178 ,  H01M50/105 ,  H01M2004/028

Abstract: A positive electrode active material that inhibits a decrease in discharge capacity in charge and discharge cycles and a battery using the positive electrode active material are provided. A high-safety battery is provided. The battery includes a positive electrode including a positive electrode current collector and a positive electrode active material layer. The positive electrode current collector is a carbon sheet. The positive electrode active material contains lithium cobalt oxide containing nickel and magnesium. The detected amount of nickel in a surface portion of the positive electrode active material is larger than that in an inner portion of the positive electrode active material. The detected amount of magnesium in the surface portion of the positive electrode active material is larger than the detected amount of magnesium in the inner portion of the positive electrode active material. The surface portion in the positive electrode active material includes a region where the distribution of nickel and the distribution of magnesium overlap with each other.

公开(公告)号：US20230044180A1

公开(公告)日：2023-02-09

申请号：US17792053

申请日：2021-01-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Koki INOUE ,  Yusuke KOUMURA

IPC: G06T3/40 ,  G06T7/11 ,  G06T7/50 ,  G06V10/25 ,  G06V10/82 ,  H04N9/43 ,  B60W40/105

Abstract: The driving assistance system includes an imaging device capable of capturing a first monochrome image in a vehicle traveling direction, a first neural network for segmentation processing, a second neural network for depth estimation processing, a determination portion determining a center of a portion cut off from the first monochrome image on the basis of the segmentation processing and the depth estimation processing, a third neural network for colorization processing of only a second cut-off monochrome image, and a display device for enlargement of the second monochrome image subjected to the colorization processing.

公开(公告)号：US20220415089A1

公开(公告)日：2022-12-29

申请号：US17778623

申请日：2020-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya OKANO ,  Teppei OGUNI ,  Kengo AKIMOTO

IPC: G06V40/20 ,  G06V10/74 ,  G06V40/16 ,  G06V10/82 ,  G06V10/762

Abstract: A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.

公开(公告)号：US20220273211A1

公开(公告)日：2022-09-01

申请号：US17627194

申请日：2020-07-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Tatsuya OKANO ,  Motoki NAKASHIMA

IPC: A61B5/16

Abstract: A fatigue evaluation system is provided. The fatigue evaluation system includes an accumulation portion, a generation portion, a storage portion, an acquisition portion, and a measurement portion. The accumulation portion has a function of accumulating a plurality of first images and a plurality of second images. The plurality of first images are images of an eye and its surroundings acquired from a side or an oblique direction. The plurality of second images are images of an eye and its surroundings acquired from a front. The generation portion has a function of performing supervised learning and generating a learned model. The storage portion has a function of storing the learned model. The acquisition portion has a function of acquiring a third image. The third image is an image of an eye and its surroundings acquired from a side or an oblique direction. The measurement portion has a function of measuring fatigue from the third image on the basis of the learned model.