公开(公告)号：US20090321771A1

公开(公告)日：2009-12-31

申请号：US12493585

申请日：2009-06-29

申请人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

发明人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

IPC分类号： H01L33/00

CPC分类号： H01S5/02292 ,  G02F1/353 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

摘要翻译： 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。

公开(公告)号：US08456010B2

公开(公告)日：2013-06-04

申请号：US13035069

申请日：2011-02-25

申请人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L23/482

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US07863637B2

公开(公告)日：2011-01-04

申请号：US12037358

申请日：2008-02-26

申请人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

公开(公告)号：US20080246049A1

公开(公告)日：2008-10-09

申请号：US10574850

申请日：2006-02-21

申请人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

摘要翻译： 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US08130803B2

公开(公告)日：2012-03-06

申请号：US12299186

申请日：2008-09-04

申请人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01S3/04 ,  G02B6/00 ,  H01L33/00

CPC分类号： H01S5/0228 ,  F21K9/61 ,  F21Y2115/10 ,  H01S5/005 ,  H01S5/22 ,  H01S5/4056

摘要： A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.

摘要翻译： 一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面， 导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面， 激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

公开(公告)号：US07993948B2

公开(公告)日：2011-08-09

申请号：US12539275

申请日：2009-08-11

申请人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.

摘要翻译： 一种通过（i）在p型半导体层上沉积钯膜来制造电极的方法; （ii）将氧气引入到钯膜上以提供氧气氛; （iii）通过在氧环境中退火钯膜来氧化与半导体层相邻的钯膜; 和（iv）直接与半导体层接触形成氧化钯膜。

公开(公告)号：US07773648B2

公开(公告)日：2010-08-10

申请号：US11365531

申请日：2006-03-02

申请人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3216

摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.

摘要翻译： 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

公开(公告)号：US07592641B2

公开(公告)日：2009-09-22

申请号：US10574850

申请日：2006-02-21

申请人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L29/24

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

摘要翻译： 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。