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164 条记录 (耗时 0.036 秒)

    Plasma etching apparatus
    31.
    发明授权
    Plasma etching apparatus 失效
    等离子刻蚀装置

    公开(公告)号：US4442338A

    公开(公告)日：1984-04-10

    申请号：US296305

    申请日：1981-08-26

    申请人： Takashi Yamazaki

    发明人： Takashi Yamazaki

    IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00 ,  C23F1/02

    CPC分类号： H01J37/32 ,  Y10S422/906

    摘要： Disclosed ia a plasma etching apparatus in which an etching chamber accomodates a pair of parallel flat plate electrodes facing each other. The etching chamber is also provided with a device for applying high frequency power to one of the electrodes and a system for introducing a reactive gas. An after-treatment chamber is connected to the etching chamber and provided with a system for introducing a heated gas into the interior, a partition means for hermetically partitioning the etching chamber and after-treatment chamber, and a system for transporting the workpiece in the etching chamber into the after-treatment chamber.

    摘要翻译： 公开了一种等离子体蚀刻装置，其中蚀刻室容纳彼此面对的一对平行平板电极。 蚀刻室还设置有用于向一个电极施加高频功率的装置和用于引入反应气体的系统。 后处理室连接到蚀刻室，并且设置有用于将加热气体引入内部的系统，用于气蚀分隔蚀刻室和后处理室的分隔装置，以及用于在蚀刻中输送工件的系统 进入后处理室。

    Semiconductor integrated circuit and manufacturing method thereof
    32.
    发明授权
    Semiconductor integrated circuit and manufacturing method thereof 有权

    公开(公告)号：US09899385B2

    公开(公告)日：2018-02-20

    申请号：US13480956

    申请日：2012-05-25

    申请人： Takashi Yamazaki ,  Shimpei Tsujikawa

    发明人： Takashi Yamazaki ,  Shimpei Tsujikawa

    IPC分类号： H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/02

    CPC分类号： H01L27/0922 ,  H01L21/823842 ,  H01L27/0266 ,  H01L27/0285

    摘要： A semiconductor integrated circuit includes a protected circuit connected to two power supply lines that provide a supply voltage, a detecting circuit that includes a resistive element and a capacitive element connected in series between two power supply lines and detects a surge generated in the power supply line based on potential variation of an inter-element connecting node, and a protection transistor that is connected between two power supply lines and has a control electrode connected to an output of the detecting circuit. The protection transistor has the control electrode formed from a different electrode material having a work function difference from a transistor of the same channel conductivity type in the protected circuit, to have a different threshold voltage from the transistor so that the amount of leakage current per unit channel width may be smaller compared with the transistor.

    SIGNAL PROCESSING DEVICE
    33.
    发明申请
    SIGNAL PROCESSING DEVICE 有权
    信号处理装置

    公开(公告)号：US20140321668A1

    公开(公告)日：2014-10-30

    申请号：US14359725

    申请日：2012-06-04

    申请人： Masaru Kimura ,  Kohei Teramoto ,  Takashi Yamazaki ,  Takuya Taniguchi

    发明人： Masaru Kimura ,  Kohei Teramoto ,  Takashi Yamazaki ,  Takuya Taniguchi

    IPC分类号： H03G3/00 ,  H04R3/04

    CPC分类号： H03G3/00 ,  H03G5/165 ,  H03G9/005 ,  H03G9/025 ,  H04R3/00 ,  H04R3/007 ,  H04R3/04 ,  H04R29/00 ,  H04R29/001

    摘要： A signal processing device includes an excessive input estimating unit 102 that estimates excessive input of a target signal, a controller 105 that calculates frequency characteristics which will lessen the excessive input of the target signal from the excessive input information estimated by the excessive input estimating unit 102, and a frequency characteristic modification unit 103 that modifies the frequency characteristics of the target signal in accordance with the frequency characteristics the controller 105 calculates.

    摘要翻译： 信号处理装置包括：估计目标信号的过度输入的过度输入估计单元102;计算频率特性的控制器105，其根据由过量输入估计单元102估计出的过大的输入信息来减小目标信号的过度输入 以及根据控制器105计算的频率特性来修正目标信号的频率特性的频率特性修改单元103。

    Physical properties measuring method and apparatus
    34.
    发明授权
    Physical properties measuring method and apparatus 有权
    物理性能测量方法和装置

    公开(公告)号：US08780193B2

    公开(公告)日：2014-07-15

    申请号：US13071797

    申请日：2011-03-25

    申请人： Takashi Yamazaki ,  Takeshi Soeda

    发明人： Takashi Yamazaki ,  Takeshi Soeda

    IPC分类号： H04N7/18 ,  H01J37/28

    CPC分类号： H04N7/18 ,  G06T7/62 ,  G06T7/66 ,  G06T2207/10056 ,  G06T2207/30108 ,  H01J37/26 ,  H01J37/28 ,  H01J37/295 ,  H01J2237/22 ,  H01J2237/24578 ,  H01J2237/2805

    摘要： A physical properties measuring method includes: acquiring an experimental convergent beam electron diffraction image of a sample by using a transmission electron microscope; calculating Zernike moment intensities of the experimental convergent beam electron diffraction image; and comparing the Zernike moment intensities of the experimental convergent beam electron diffraction image with Zernike moment intensities of calculated convergent beam electron diffraction images calculated on changed physical properties of the sample.

    摘要翻译： 物理性质测量方法包括：使用透射电子显微镜获取样品的实验收敛束电子衍射图像; 计算实验收敛束电子衍射图像的泽尼克力矩; 并且将实验收敛束电子衍射图像的泽尼克力矩与用样品的改变的物理性质计算的计算的收敛束电子衍射图像的泽尼克力矩进行比较。

    Flexural vibrating reed, flexural vibrator, and piezoelectric device
    35.
    发明授权
    Flexural vibrating reed, flexural vibrator, and piezoelectric device 失效
    弯曲振动片，弯曲振动器和压电装置

    公开(公告)号：US08766515B2

    公开(公告)日：2014-07-01

    申请号：US13125000

    申请日：2009-10-22

    申请人： Makoto Furuhata ,  Takeo Funakawa ,  Takashi Yamazaki

    发明人： Makoto Furuhata ,  Takeo Funakawa ,  Takashi Yamazaki

    IPC分类号： H03H9/21

    CPC分类号： H03H9/21 ,  H03H9/0547 ,  H03H9/1021 ,  H03H9/19 ,  H03H9/215

    摘要： Deterioration of the Q value caused by the thermoelastic effect is suppressed. Since a first depth of a first groove and a second depth of a second groove are smaller than a distance between a surface including a third surface and a surface including a fourth surface, the first and second grooves do not penetrate between the surface including the third surface and the surface including the fourth surface. In addition, the sum of the first depth of the first groove and the second depth of the second groove is greater than the distance between the third and fourth surfaces, a heat transfer path between a first expandable portion (the first surface) and a second expandable portion (the second surface) cannot be formed as a straight line. As such, the heat transfer path between the first expandable portion (the first surface) and a second expandable portion (the second surface) is made to detour to the first and second grooves and and thus be lengthened.

    摘要翻译： 抑制由热弹性效应引起的Q值的劣化。 由于第一凹槽的第一深度和第二凹槽的第二深度小于包括第三表面的表面和包括第四表面的表面之间的距离，所以第一和第二凹槽不会穿过包括第三凹槽的表面 表面和包括第四表面的表面。 此外，第一凹槽的第一深度和第二凹槽的第二深度之和大于第三和第四表面之间的距离，第一可膨胀部分（第一表面）和第二凹槽之间的传热路径 可膨胀部分（第二表面）不能形成为直线。 因此，使第一可膨胀部分（第一表面）和第二可膨胀部分（第二表面）之间的传热路径绕第一和第二槽弯曲并因此被延长。

    Component transferring apparatus and IC handler
    37.
    发明授权
    Component transferring apparatus and IC handler 有权
    组件传送设备和IC处理程序

    公开(公告)号：US08622198B2

    公开(公告)日：2014-01-07

    申请号：US13275619

    申请日：2011-10-18

    申请人： Takashi Yamazaki ,  Hiroaki Fujimori ,  Naohisa Maeda ,  Daisuke Kirihara ,  Satoshi Nakamura ,  Masami Maeda

    发明人： Takashi Yamazaki ,  Hiroaki Fujimori ,  Naohisa Maeda ,  Daisuke Kirihara ,  Satoshi Nakamura ,  Masami Maeda

    IPC分类号： B65G47/34

    CPC分类号： G01R31/2893 ,  G05B2219/37216 ,  G05B2219/40564 ,  G05B2219/45026

    摘要： An apparatus includes: a retainer moving between a shuttle and a socket; a presser holding a component; an adjuster moving the presser; a socket mark near the socket; a hand mark near the socket mark when the retainer is at a component mounting position; a first camera photographing a first image including the component and hand mark; a second camera photographing a second image including the socket mark and socket, and a third image including the socket mark and hand mark; a first calculator obtaining a first relative position between the socket mark and socket from the second image; a second calculator obtaining a second relative position between the socket mark and hand mark from the third image; and a third calculator obtaining a third relative position between the hand mark and component from the first image. The adjuster corrects the component's position based on the relative positions.

    摘要翻译： 一种装置包括：保持件在梭子和插座之间移动; 持有组件的压脚; 调节器移动压脚; 插座附近的插座标记; 当保持器处于部件安装位置时，在插座标记附近的手标记; 拍摄包括所述部件和手标记的第一图像的第一相机; 拍摄包括插座标记和插座的第二图像的第二相机以及包括插座标记和手标的第三图像; 第一计算器，从所述第二图像获得所述插座标记和所述插座之间的第一相对位置; 第二计算器，从所述第三图像获得所述插座标记与手标记之间的第二相对位置; 以及第三计算器，从所述第一图像获得所述手标和分量之间的第三相对位置。 调整器根据相对位置校正组件的位置。

    R-T-B-BASED RARE EARTH PERMANENT MAGNET, MOTOR, AUTOMOBILE, POWER GENERATOR, AND WIND POWER-GENERATING APPARATUS
    40.
    发明申请
    R-T-B-BASED RARE EARTH PERMANENT MAGNET, MOTOR, AUTOMOBILE, POWER GENERATOR, AND WIND POWER-GENERATING APPARATUS 审中-公开
    基于R-T-B的稀土永磁体，电机，汽车，发电机和风力发电设备

    公开(公告)号：US20130099150A1

    公开(公告)日：2013-04-25

    申请号：US13807228

    申请日：2011-05-19

    申请人： Kenichiro Nakajima ,  Takashi Yamazaki

    发明人： Kenichiro Nakajima ,  Takashi Yamazaki

    IPC分类号： H01F1/01

    CPC分类号： H01F1/01 ,  C22C38/005 ,  C22C2202/02 ,  H01F1/0577

    摘要： An R-T-B-based rare earth permanent magnet including a sintered body which is provided with a main phase mainly containing R2Fe14B, and with a grain boundary phase which has a greater R content than said main phase, wherein R denotes a rare earth element including Nd and Dy as an essential element, and the grain boundary phase includes a first grain boundary phase and a second grain boundary phase which have different atomic concentration of Dy to each other.

    摘要翻译： 一种RTB系稀土永磁体，其特征在于，具备烧结体，所述烧结体具有主要含有R 2 Fe 14 B的主相和具有比所述主相R含量更大的晶界相的烧结体，其中，R表示包含Nd的稀土元素， Dy作为必需元素，并且晶界相包括彼此具有不同的Dy原子浓度的第一晶界相和第二晶界相。