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31.发明申请MEMORY CELLS, SEMICONDUCTOR DEVICES INCLUDING SUCH CELLS, AND METHODS OF FABRICATION 有权记忆细胞，包括这种细胞的半导体器件，以及制造方法公开(公告)号：US20130128649A1
公开(公告)日：2013-05-23
申请号：US13298987
申请日：2011-11-17
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1616
摘要： Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
摘要翻译： 公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。 细胞材料和离子源材料之间包含不连续的界面材料。 还公开了包括所公开的存储单元的制造方法和半导体器件。
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32.发明申请Methods Of Forming A Tellurium Alkoxide And Methods Of Forming A Mixed Halide-Alkoxide Of Tellurium 有权形成碲化铋的方法和形成碲的混合卤化物 - 醇的方法公开(公告)号：US20120184781A1
公开(公告)日：2012-07-19
申请号：US13430959
申请日：2012-03-27
申请人： Stefan Uhlenbrock
发明人： Stefan Uhlenbrock
IPC分类号： C07C395/00
CPC分类号： C07C395/00
摘要： A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.
摘要翻译： 形成碲醇盐的方法包括在液体有机溶剂中提供卤化碲和非碲醇盐。 液体有机溶剂在液体有机溶剂中的摩尔数小于卤化铱的摩尔数（如果有的话）。 使液体有机溶剂中的卤化碲和非碲醇盐反应形成反应产物卤化物和碲化铋。 将液体有机溶剂从反应产物卤化物和碲醇盐中除去以留下包含反应产物卤化物和碲化铋的液体和/或固体混合物。 加热混合物有效地从反应产物卤化物中气化碲醇矾盐。 公开了其它实施方案，包括形成碲的混合卤化物 - 醇盐的方法。
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33.发明申请Unsymmetrical Ligand Sources, Reduced Symmetry Metal-Containing Compounds, and Systems and Methods Including Same 有权不对称配体源，减少对称性含金属化合物，以及包括其的系统和方法公开(公告)号：US20110071316A1
公开(公告)日：2011-03-24
申请号：US12954344
申请日：2010-11-24
IPC分类号： C07C251/08 , C07C249/02
CPC分类号： H01L21/0228 , C07C251/12 , C07F5/003 , C23C16/18 , C23C16/40 , H01L21/02175 , H01L21/02197 , H01L21/28556 , H01L21/3141 , H01L21/316
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译： 本发明提供含有金属的化合物，其包含至少一种β-二亚胺化物配体，以及制备和使用它们的方法。 在一些实施方案中，含金属的化合物是包含不对称的重氮基配合物的均质配合物。 在其它实施方案中，含金属的化合物是包含至少一个重铬酸配体的杂光配合物。 该化合物可用于使用气相沉积方法沉积含金属层。 还提供了包括这些化合物的蒸镀系统。 还提供了二联体配位体的衍生物。
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34.发明申请UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME 有权不对称配体源，减少对称金属含量化合物，以及包括其中的系统和方法公开(公告)号：US20090275199A1
公开(公告)日：2009-11-05
申请号：US12500738
申请日：2009-07-10
IPC分类号： H01L21/3205
CPC分类号： H01L21/0228 , C07C251/12 , C07F5/003 , C23C16/18 , C23C16/40 , H01L21/02175 , H01L21/02197 , H01L21/28556 , H01L21/3141 , H01L21/316
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译： 本发明提供含有至少一种β-二酮亚胺配体的含金属化合物及其制备和使用方法。 在一些实施方案中，含金属的化合物是包含不对称的β-二酮亚胺配体的均聚配合物。 在其它实施方案中，含金属化合物是包含至少一个β-二酮酸配体的杂光复合物。 该化合物可用于使用气相沉积方法沉积含金属层。 还提供了包括这些化合物的蒸镀系统。 还提供了β-二酮酸配体的来源。
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公开(公告)号：US07226861B2
公开(公告)日：2007-06-05
申请号：US10755097
申请日：2004-01-09
申请人： Stefan Uhlenbrock , Eugene P. Marsh
发明人： Stefan Uhlenbrock , Eugene P. Marsh
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , C23C16/18 , H01L21/28556 , H01L21/28568 , H01L21/32051 , H01L21/7687 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
摘要翻译： 提供了使用式L y using using using using using using using using using using using using using using using using using using using using。。。。。。。。。。。。。。。。。。。。。。 还提供了化学气相共沉积的铂 - 铑合金屏障和用于集成电路的电池电介质的电极，特别是用于DRAM电池电容器。 在氧化再结晶步骤期间，合金屏障保护周围材料不被氧化，并在高温处理步骤中保护电池电介质免受氧气损失。 还提供了用于铂 - 铑合金扩散阻挡层的CVD共沉积的方法。
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36.发明授权Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide 失效用于直接液体注入钌和氧化钌的溶剂化钌前体公开(公告)号：US06840988B2
公开(公告)日：2005-01-11
申请号：US10365204
申请日：2003-02-11
申请人： Eugene P. Marsh , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： C23C16/18 , C23C16/40 , H01L21/02 , H01L21/285 , C23C16/16
CPC分类号： H01L28/60 , C23C16/18 , C23C16/40 , H01L21/28556
摘要： A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.
摘要翻译： 提供了一种通过采用化学气相沉积技术分解钌前体制剂来将氧化钌或氧化钌的膜形成到衬底的表面的方法。 本发明的钌前体制剂包括钌前体化合物和能够溶解钌前体化合物的溶剂。 还提供了一种用于制备用于将钌和钌的材料化学气相沉积到基底上的蒸发的钌前体的方法，其中具有含钌前体化合物的钌前体制剂和能够使含钌 前体化合物蒸发。
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公开(公告)号：US06656835B2
公开(公告)日：2003-12-02
申请号：US09884997
申请日：2001-06-21
申请人： Eugene P. Marsh , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： H01L214763
CPC分类号： C23C16/45553 , C23C16/045 , C23C16/16 , C23C16/18 , C23C16/4401 , H01L27/10811 , H01L27/10852 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.
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38.发明授权Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers 有权用于形成诸如铂 - 铑屏障层的含铑层的方法公开(公告)号：US06271131B1
公开(公告)日：2001-08-07
申请号：US09146556
申请日：1998-09-03
申请人： Stefan Uhlenbrock , Eugene P. Marsh
发明人： Stefan Uhlenbrock , Eugene P. Marsh
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , C23C16/16 , C23C16/18 , H01L21/28556 , H01L21/28568 , H01L21/32051 , H01L21/7687 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
摘要翻译： 提供了使用式LyRhYz的配合物在诸如半导体晶片的基板上形成含铑层的方法。 还提供了化学气相共沉积的铂 - 铑合金屏障和用于集成电路的电池电介质的电极，特别是用于DRAM电池电容器。 在氧化再结晶步骤期间，合金屏障保护周围材料不被氧化，并在高温处理步骤中保护电池电介质免受氧气损失。 还提供了用于铂 - 铑合金扩散阻挡层的CVD共沉积的方法。
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39.发明授权公开(公告)号：US08697486B2
公开(公告)日：2014-04-15
申请号：US12424404
申请日：2009-04-15
IPC分类号： H01L21/06
CPC分类号： H01L45/144 , C23C16/28 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
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40.发明授权Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of tellurium 有权形成碲醇盐的方法和形成碲的混合卤化物 - 醇盐的方法公开(公告)号：US08283503B2
公开(公告)日：2012-10-09
申请号：US13430959
申请日：2012-03-27
申请人： Stefan Uhlenbrock
发明人： Stefan Uhlenbrock
IPC分类号： C07C31/02
CPC分类号： C07C395/00
摘要： A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.
摘要翻译： 形成碲醇盐的方法包括在液体有机溶剂中提供卤化碲和非碲醇盐。 液体有机溶剂在液体有机溶剂中的摩尔数小于卤化碲的摩尔数（如果有的话）。 使液体有机溶剂中的卤化碲和非碲醇盐反应形成反应产物卤化物和碲化铋。 将液体有机溶剂从反应产物卤化物和碲醇盐中除去以留下包含反应产物卤化物和碲化铋的液体和/或固体混合物。 加热混合物有效地从反应产物卤化物中气化碲醇矾盐。 公开了其它实施方案，包括形成碲的混合卤化物 - 醇盐的方法。
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