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31.发明公开公开(公告)号：US20240243156A1
公开(公告)日：2024-07-18
申请号：US18155096
申请日：2023-01-17
发明人： Tsung Hsien Tsai , Cheng Yu Huang , Jen-Cheng Liu , Keng-Yu Chou , Ming-En Chen , Shyh-Fann Ting
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14636 , H01L27/14685
摘要： A process of forming a back side deep trench isolation structure for an image sensing device includes etching first trenches in the back side of a semiconductor substrate, lining the first trenches with dielectric, depositing passivation layers over and within the first trenches, and etching second trenches through the passivation layers into the first trenches, and filling the second trenches to form a substrate-embedded metal grid. Optionally, the bottoms of the first trenches are filled by depositing and etching a lower fill material prior to depositing the passivation layers. The method prevents the passivation layers from pinching off in a way that causes voids within the first trenches. The result is better optical performance such as increased quantum efficiency and reduced crosstalk.
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公开(公告)号：US20240194716A1
公开(公告)日：2024-06-13
申请号：US18150400
申请日：2023-01-05
发明人： Yu-Wei Huang , Chen-Hsien Lin , Shyh-Fann Ting
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： Some embodiments relate to an integrated chip including a semiconductor substrate and a pixel array comprising a plurality of photodetectors in the semiconductor substrate. The pixel array further comprises a plurality of transistors on a frontside of the semiconductor substrate. A backside ground (BSGD) structure extends into a backside of the semiconductor substrate, opposite the frontside, and further surrounding the pixel array along a periphery of the pixel array. The BSGD structure has a first sloped sidewall extending from a bottom surface of the BSGD structure that is recessed into the semiconductor substrate.
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公开(公告)号：US20230307479A1
公开(公告)日：2023-09-28
申请号：US17832905
申请日：2022-06-06
发明人： Yen-Yu Chen , Yen-Ting Chiang , Bai-Tao Huang , Tse-Hua Lu , Tzu-Hsuan Hsu , Shyh-Fann Ting , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14643 , H01L27/14636 , H01L27/14689
摘要： Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a substrate having a first side and a second side. The substrate includes a pixel region. A photodetector is in the pixel region. A first doped region is in the pixel region. A second doped region is in the pixel region. The second doped region is vertically between the first doped region and the first side of the substrate. A doped well is in the substrate and laterally surrounds the pixel region. The doped well is partially in the second doped region. A portion of the second doped region is vertically between the doped well and the second side of the substrate. A trench isolation structure is in the semiconductor substrate and laterally surrounds the pixel region. A footprint of the trench isolation structure is within a footprint of the doped well.
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公开(公告)号：US10943940B2
公开(公告)日：2021-03-09
申请号：US16390126
申请日：2019-04-22
发明人： Wei Chuang Wu , Jhy-Jyi Sze , Yu-Jen Wang , Yen-Chang Chu , Shyh-Fann Ting , Ching-Chun Wang
IPC分类号： H01L27/146 , H01L21/02 , H01L21/311
摘要： Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.
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公开(公告)号：US20190252451A1
公开(公告)日：2019-08-15
申请号：US16390126
申请日：2019-04-22
发明人： Wei Chuang Wu , Jhy-Jyi Sze , Yu-Jen Wang , Yen-Chang Chu , Shyh-Fann Ting , Ching-Chun Wang
IPC分类号： H01L27/146 , H01L21/311 , H01L21/02
CPC分类号： H01L27/14645 , H01L21/02164 , H01L21/02274 , H01L21/31144 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14689
摘要： Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.
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公开(公告)号：US09741665B2
公开(公告)日：2017-08-22
申请号：US15089856
申请日：2016-04-04
IPC分类号： H01L23/544 , H01L27/02 , H01L21/308 , H01L21/311 , H01L21/8234 , H01L21/027 , H01L21/762 , H01L21/3065 , H01L29/06 , H01L29/78 , H01L29/66
CPC分类号： H01L23/544 , H01L21/0274 , H01L21/0276 , H01L21/3065 , H01L21/308 , H01L21/3085 , H01L21/31111 , H01L21/762 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0207 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L29/0646 , H01L29/6659 , H01L29/78 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a photo resist over a semiconductor substrate of a wafer, patterning the photo resist to form a first opening in the photo resist, and implanting the semiconductor substrate using the photo resist as an implantation mask. An implanted region is formed in the semiconductor substrate, wherein the implanted region is overlapped by the first opening. A coating layer is coated over the photo resist, wherein the coating layer includes a first portion in the first opening, and a second portion over the photo resist. A top surface of the first portion is lower than a top surface of the second portion. The coating layer, the photo resist, and the implanted region are etched to form a second opening in the implanted region.
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公开(公告)号：US20160218066A1
公开(公告)日：2016-07-28
申请号：US15089856
申请日：2016-04-04
IPC分类号： H01L23/544 , H01L29/78 , H01L27/02 , H01L29/06
CPC分类号： H01L23/544 , H01L21/0274 , H01L21/0276 , H01L21/3065 , H01L21/308 , H01L21/3085 , H01L21/31111 , H01L21/762 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0207 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L29/0646 , H01L29/6659 , H01L29/78 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a photo resist over a semiconductor substrate of a wafer, patterning the photo resist to form a first opening in the photo resist, and implanting the semiconductor substrate using the photo resist as an implantation mask. An implanted region is formed in the semiconductor substrate, wherein the implanted region is overlapped by the first opening. A coating layer is coated over the photo resist, wherein the coating layer includes a first portion in the first opening, and a second portion over the photo resist. A top surface of the first portion is lower than a top surface of the second portion. The coating layer, the photo resist, and the implanted region are etched to form a second opening in the implanted region.
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公开(公告)号：US09355964B2
公开(公告)日：2016-05-31
申请号：US14203242
申请日：2014-03-10
发明人： Cheng-Hsien Chou , Sheng-Chau Chen , Chun-Wei Chang , Kai-Chun Hsu , Chih-Yu Lai , Wei-Cheng Hsu , Hsiao-Hui Tseng , Shih Pei Chou , Shyh-Fann Ting , Tzu-Hsuan Hsu , Ching-Chun Wang , Yeur-Luen Tu , Dun-Nian Yaung
IPC分类号： H01L21/78 , H01L23/544 , H01L21/762
CPC分类号： H01L23/544 , H01L21/02164 , H01L21/02233 , H01L21/308 , H01L21/7621 , H01L21/76224 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L29/0649 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method of fabrication of alignment marks for a non-STI CMOS image sensor is introduced. In some embodiments, zero layer alignment marks and active are alignment marks may be simultaneously formed on a wafer. A substrate of the wafer may be patterned to form one or more recesses in the substrate. The recesses may be filled with a dielectric material using, for example, a field oxidation method and/or suitable deposition methods. Structures formed by the above process may correspond to elements of the zero layer alignment marks and/or to elements the active area alignment marks.
摘要翻译： 介绍了一种制造非STI CMOS图像传感器对准标记的方法。 在一些实施例中，可以在晶片上同时形成零层对准标记和活性物质对准标记。 可以将晶片的衬底图案化以在衬底中形成一个或多个凹槽。 可以使用例如场氧化方法和/或合适的沉积方法用电介质材料填充凹部。 通过上述过程形成的结构可以对应于零层对准标记的元素和/或对应于有源区对准标记的元件。
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公开(公告)号：US20240355865A1
公开(公告)日：2024-10-24
申请号：US18334618
申请日：2023-06-14
发明人： Chih-Ping Chang , Ming-I Wang , Shyh-Fann Ting
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14636 , H01L27/14689
摘要： An integrated chip including a semiconductor substrate. The semiconductor substrate includes a first region having a first doping type, a second region having a second doping type, different than the first doping type, and a third region having the second doping type. A photodetector is in the semiconductor substrate. The photodetector is formed, at least in part, by the first region and the second region. A first capacitor electrode is over the third region of the semiconductor substrate. The first capacitor electrode includes a semiconductor. A first insulator layer is between the first capacitor electrode and the third region. A capacitor is along the semiconductor substrate. The capacitor is formed, at least in part, by the first capacitor electrode, the third region, and the first insulator layer.
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公开(公告)号：US20240204016A1
公开(公告)日：2024-06-20
申请号：US18591039
申请日：2024-02-29
发明人： Chun-Yuan Chen , Ching-Chun Wang , Hsiao-Hui Tseng , Jen-Cheng Liu , Jhy-Jyi Sze , Shyh-Fann Ting , Wei Chuang Wu , Yen-Ting Chiang , Chia Ching Liao , Yen-Yu Chen
IPC分类号： H01L27/146 , H01L29/423
CPC分类号： H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L29/4236 , H01L29/42376
摘要： In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.
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