公开(公告)号：US10109756B2

公开(公告)日：2018-10-23

申请号：US14824910

申请日：2015-08-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Chia-Shiung Tsai ,  Cheng-Ta Wu ,  Xiaomeng Chen ,  Yen-Chang Chu ,  Yeur-Luen Tu

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/109 ,  H01L27/146 ,  H01L31/105

摘要： A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

公开(公告)号：US20180068965A1

公开(公告)日：2018-03-08

申请号：US15800491

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Chau Chen ,  Shih Pei Chou ,  Yen-Chang Chu ,  Cheng-Hsien Chou ,  Chih-Hui Huang ,  Yeur-Luen Tu

IPC分类号： H01L23/00 ,  H01L21/321 ,  H01L21/324 ,  H01L21/311 ,  H01L25/065 ,  H01L27/146

CPC分类号： H01L24/08 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/324 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/80 ,  H01L25/0657 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/02321 ,  H01L2224/0235 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03614 ,  H01L2224/03845 ,  H01L2224/039 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08057 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80121 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80906 ,  H01L2224/80948 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/04642

摘要： A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

公开(公告)号：US09673239B1

公开(公告)日：2017-06-06

申请号：US14996462

申请日：2016-01-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Chang Chu ,  Yeur-Luen Tu ,  Cheng-Yuan Tsai

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

摘要： A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.

公开(公告)号：US20200373445A1

公开(公告)日：2020-11-26

申请号：US16993824

申请日：2020-08-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Chia-Shiung Tsai ,  Cheng-Ta Wu ,  Xiaomeng Chen ,  Yen-Chang Chu ,  Yeur-Luen Tu

IPC分类号： H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/109 ,  H01L27/146 ,  H01L31/105

摘要： A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

公开(公告)号：US10177106B2

公开(公告)日：2019-01-08

申请号：US15800491

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Chau Chen ,  Shih Pei Chou ,  Yen-Chang Chu ,  Cheng-Hsien Chou ,  Chih-Hui Huang ,  Yeur-Luen Tu

IPC分类号： H01L23/00 ,  H01L21/324 ,  H01L27/146 ,  H01L21/311 ,  H01L21/321 ,  H01L25/065

摘要： A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

公开(公告)号：US10090196B2

公开(公告)日：2018-10-02

申请号：US15018422

申请日：2016-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsun-Chung Kuang ,  Yen-Chang Chu ,  Cheng-Tai Hsiao ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC分类号： H01L25/065 ,  H01L25/04 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L25/075 ,  H01L23/538 ,  H01L23/29 ,  H01L25/00

摘要： An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

公开(公告)号：US10049901B2

公开(公告)日：2018-08-14

申请号：US15418413

申请日：2017-01-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ping-Yin Liu ,  Yen-Chang Chu ,  Xin-Hua Huang ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Ru-Liang Lee

IPC分类号： H01L21/67 ,  H01L21/683 ,  H01L25/00

摘要： A method includes placing a first wafer onto a surface of a first wafer chuck, the first wafer chuck including multiple first profile control zones separated by one or more shared flexible membranes. The method also includes setting a first profile of the surface of the first wafer chuck. Setting a first profile of the surface of the first wafer chuck includes adjusting a first volume of a first profile control zone of the multiple first profile control zones. Setting a first profile of the surface of the first wafer chuck also includes adjusting a second volume of a second profile control zone of the multiple first profile control zones, the first volume of the first profile control zone being adjusted independently from the second volume of the second profile control zone, and the second adjustable volume encircling the first adjustable volume.

公开(公告)号：US20170263657A1

公开(公告)日：2017-09-14

申请号：US15610034

申请日：2017-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Chang Chu ,  Yeur-Luen Tu ,  Cheng-Yuan Tsai

IPC分类号： H01L27/146

摘要： A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.

公开(公告)号：US20160260767A1

公开(公告)日：2016-09-08

申请号：US15157275

申请日：2016-05-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Chuang Wu ,  Jhy-Jyi Sze ,  Yu-Jen Wang ,  Yen-Chang Chu ,  Shyh-Fann Ting ,  Ching-Chun Wang

IPC分类号： H01L27/146 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L27/14645 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31144 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

摘要： Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

公开(公告)号：US20160155665A1

公开(公告)日：2016-06-02

申请号：US15018422

申请日：2016-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsun-Chung Kuang ,  Yen-Chang Chu ,  Cheng-Tai Hsiao ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC分类号： H01L21/768 ,  H01L25/00

CPC分类号： H01L21/76883 ,  H01L21/76805 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/538 ,  H01L23/5385 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/10 ,  H01L24/18 ,  H01L24/80 ,  H01L24/89 ,  H01L25/043 ,  H01L25/0657 ,  H01L25/0756 ,  H01L25/50 ,  H01L2224/03616 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05547 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/80097 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2225/06513 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.