公开(公告)号：US20230031447A1

公开(公告)日：2023-02-02

申请号：US17872560

申请日：2022-07-25

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI ,  Kenta KATO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container including a substrate support; a shower head that supplies active species of a first gas into the processing container; a first dissociation space through which the active species is supplied to the shower head; and a resonator that supplies electromagnetic waves in a VHF band or higher to the first dissociation space. The resonator includes: a cylindrical body; a gas pipe which passes through an interior of the cylindrical body, is provided along a central axis direction of the cylindrical body, and includes gas holes through which the first gas is supplied into the first dissociation space; and a dielectric window including a central portion through which the end portion of the gas pipe passes, and configured to seal a space between the gas pipe and the cylindrical body and cause the electromagnetic waves to transmit through the first dissociation space.

公开(公告)号：US20220068603A1

公开(公告)日：2022-03-03

申请号：US17299483

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Taro IKEDA ,  Sumi TANAKA ,  Satoru KAWAKAMI ,  Masaki HIRAYAMA

IPC: H01J37/32

Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

公开(公告)号：US20210398786A1

公开(公告)日：2021-12-23

申请号：US17297190

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: Improvement of plasma heat dissipation has been required with respect to a plasma processing apparatus. The plasma processing apparatus includes a dielectric, a conductive film, a heat radiation film, and an electrode. The dielectric has one surface which faces a space for plasma generation. The conductive film is installed on the other surface of the dielectric. The heat radiation film is installed on the conductive film, and has a higher emissivity than the conductive film. The electrode is electrically connected to the conductive film so as to apply electric power for plasma generation.

公开(公告)号：US20210134560A1

公开(公告)日：2021-05-06

申请号：US17083709

申请日：2020-10-29

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Mikio SATO ,  Nobuhiko YAMAMOTO

IPC: H01J37/32 ,  H05H1/46

Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

公开(公告)号：US20210082727A1

公开(公告)日：2021-03-18

申请号：US17018532

申请日：2020-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Atsushi KUBO ,  Eiki KAMATA ,  Nobuhiko YAMAMOTO

IPC: H01L21/67 ,  H01L21/66 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

公开(公告)号：US20190075644A1

公开(公告)日：2019-03-07

申请号：US16124065

申请日：2018-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Jun NAKAGOMI

IPC: H05H1/46 ,  C23C16/511 ,  H01J37/32

Abstract: A plasma processing apparatus, for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber, includes a microwave introducing surface and a plurality of gas injection holes. Microwaves from a microwave introducing unit are introduced through microwave introducing surface and surface waves of the microwaves propagate on the microwave introducing surface. The gas injection holes are arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface.

公开(公告)号：US20160284516A1

公开(公告)日：2016-09-29

申请号：US15075670

申请日：2016-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Akira TANIHARA ,  Shigeru KASAI ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32238

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract translation: 一种微波等离子体源，用于通过将微波辐射到等离子体处理装置的腔室中来形成表面波等离子体，其包括：用于输出微波的微波输出部分; 用于传送微波的微波传输部分; 以及用于将微波辐射到室中的微波辐射构件。 微波传输部分包括多个微波引入机构，其周向布置在微波辐射部件的周边部分中，并被配置为将微波引入到微波辐射部件中。 微波辐射构件包括金属主体，在主体的配置表面附近布置成整体环形的多个电介质慢波构件，布置在主体的微波辐射表面中的环形介电微波传输构件 主体和安装在慢波构件和微波传输构件之间的缝隙天线部分。

公开(公告)号：US20160222516A1

公开(公告)日：2016-08-04

申请号：US14917414

申请日：2014-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Shigeru KASAI ,  Emiko HARA ,  Yutaka FUJINO ,  Yuki OSADA ,  Jun NAKAGOMI ,  Tomohito KOMATSU

IPC: C23C16/511 ,  C23C16/455 ,  H01J37/32

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract translation: 等离子体处理装置通过利用供给的微波在表面波形成的喷淋板的表面波上产生等离子体来进行处理，该等离子体处理装置包括配备有用于将第一和第二气体供给到处理容器中的喷淋板的等离子体发生天线， 安装成从淋浴板的下端面向下方突出的下垂部件。 下垂构件的外表面从顶端到底端向外扩散。 淋浴板包括第一和第二气体供应孔，第一和第二气体分别通过第一和第二气体供应孔被供应到处理容器中。 第一气体供给孔设置在下垂构件的外表面的内侧。 第二气体供给孔设置在下垂构件的外表面的外侧。

公开(公告)号：US20160177448A1

公开(公告)日：2016-06-23

申请号：US14968346

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA

IPC: C23C16/511 ,  C23C16/455

CPC classification number: C23C16/511 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/517 ,  H01J37/222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449

Abstract: There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

Abstract translation: 提供了一种等离子体处理装置，其包括配备有喷淋板的等离子体产生天线，其被配置为将第一气体和第二气体供应到处理容器中。 该装置包括从淋浴板的下端面向下方突出设置的下垂部件。 下垂构件的外表面从顶端到底端向外扩散。 淋浴板包括多个第一和第二气体供应孔，第一和第二气体分别通过该第一和第二气体供应孔被供应到处理容器中。 每个第一气体供给孔设置在下垂构件的外表面的内侧。 每个第二气体供给孔设置在下垂构件的外表面的外侧。 在通孔中形成有孔部。

公开(公告)号：US20150170881A1

公开(公告)日：2015-06-18

申请号：US14566117

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito KOMATSU ,  Taro IKEDA ,  Yutaka FUJINO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Abstract translation: 一种在等离子体处理装置的腔室中辐射微波以产生表面波等离子体的微波等离子体源包括：微波输出单元，被配置为产生和输出微波;微波提供单元，被配置为从微波输出单元传输微波输出;以及 微波辐射构件，其构造为所述室的顶壁，并且被配置为将从所述微波供应单元供应的微波辐射到所述室中。 微波供给单元包括沿圆周方向设置的微波引入机构，从而将微波引入微波辐射构件。 微波辐射构件包括具有微波辐射穿过的槽的微波辐射构件的槽天线。 这些槽整体形成为圆形。 微波传输部件设置成形成圆环状。