IMAGE SENSOR DEVICE WITH LIGHT GUIDING STRUCTURE
    33.
    发明申请
    IMAGE SENSOR DEVICE WITH LIGHT GUIDING STRUCTURE 有权
    具有轻导向结构的图像传感器装置

    公开(公告)号:US20150264233A1

    公开(公告)日:2015-09-17

    申请号:US14211636

    申请日:2014-03-14

    Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

    Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构,并且电介质结构具有基本平坦的顶表面。 此外,图像传感器装置包括在电介质结构中的凹槽,并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

    PHOTOMASK AND METHOD FOR FORMING DUAL STI STRUCTURE BY USING THE SAME
    35.
    发明申请
    PHOTOMASK AND METHOD FOR FORMING DUAL STI STRUCTURE BY USING THE SAME 有权
    用于形成双色结构的光刻胶和方法

    公开(公告)号:US20150132919A1

    公开(公告)日:2015-05-14

    申请号:US14080631

    申请日:2013-11-14

    CPC classification number: H01L21/76229 G03F1/00 H01L21/0274 H01L21/3083

    Abstract: In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer, in which a depth of the at least one first hole is different from a depth of the at least one second hole. The mask layer and the substrate are etched to form at least one first trench having a first depth and at least one second trench having a second depth, in which the first depth is different from the second depth. The remaining mask layer is removed. A first isolation layer and A second isolation layer are respectively formed in the at least one first trench and the at least one second trench.

    Abstract translation: 在制造双浅沟槽隔离结构的方法中,提供衬底,并且在衬底上形成掩模层。 通过使用光掩模来对掩模层进行构图,以在掩模层中形成至少一个第一孔和至少一个第二孔,其中至少一个第一孔的深度与至少一个第二孔的深度不同 。 蚀刻掩模层和衬底以形成具有第一深度的至少一个第一沟槽和具有第二深度的至少一个第二沟槽,其中第一深度不同于第二深度。 剩下的掩模层被去除。 第一隔离层和第二隔离层分别形成在至少一个第一沟槽和至少一个第二沟槽中。

    IMAGE SENSOR
    36.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20230246047A1

    公开(公告)日:2023-08-03

    申请号:US18298351

    申请日:2023-04-10

    Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

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