公开(公告)号：US20170076994A1

公开(公告)日：2017-03-16

申请号：US15345279

申请日：2016-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/165 ,  H01L21/324 ,  H01L27/092

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源/漏结构上的半导体保护层。 半导体保护层的硅的原子浓度大于外延生长的源极/漏极结构的原子浓度。

公开(公告)号：US20170069545A1

公开(公告)日：2017-03-09

申请号：US15355626

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/08 ,  H01L29/24 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的碳原子浓度大于外延生长的源极/漏极结构的碳原子浓度。

公开(公告)号：US20150264233A1

公开(公告)日：2015-09-17

申请号：US14211636

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Zen-Fong HUANG ,  Chia-Yu WEI ,  Chi-Cherng JENG ,  Hsin-Chi CHEN

IPC: H04N5/225

CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

公开(公告)号：US20150243696A1

公开(公告)日：2015-08-27

申请号：US14192322

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Volume CHIEN ,  Kun-Huei LIN ,  Chia-Yu WEI ,  Allen TSENG ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract translation: 本公开提供了一种图像传感器装置和制造方法。 图像传感器装置包括半导体衬底和半导体衬底中的光感测区域。 图像传感器装置还包括在半导体衬底中并与光感测区相邻的遮光结构。 遮光结构的侧壁是曲面。

公开(公告)号：US20150132919A1

公开(公告)日：2015-05-14

申请号：US14080631

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Fu-Cheng CHANG ,  Chai-Der YEN ,  Fu-Tsun TSAI ,  Chi-Cherng JENG ,  Chih-Mu HUANG

IPC: H01L21/762 ,  G03F1/00

CPC classification number: H01L21/76229 ,  G03F1/00 ,  H01L21/0274 ,  H01L21/3083

Abstract: In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer, in which a depth of the at least one first hole is different from a depth of the at least one second hole. The mask layer and the substrate are etched to form at least one first trench having a first depth and at least one second trench having a second depth, in which the first depth is different from the second depth. The remaining mask layer is removed. A first isolation layer and A second isolation layer are respectively formed in the at least one first trench and the at least one second trench.

Abstract translation: 在制造双浅沟槽隔离结构的方法中，提供衬底，并且在衬底上形成掩模层。 通过使用光掩模来对掩模层进行构图，以在掩模层中形成至少一个第一孔和至少一个第二孔，其中至少一个第一孔的深度与至少一个第二孔的深度不同 。 蚀刻掩模层和衬底以形成具有第一深度的至少一个第一沟槽和具有第二深度的至少一个第二沟槽，其中第一深度不同于第二深度。 剩下的掩模层被去除。 第一隔离层和第二隔离层分别形成在至少一个第一沟槽和至少一个第二沟槽中。

公开(公告)号：US20230246047A1

公开(公告)日：2023-08-03

申请号：US18298351

申请日：2023-04-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

公开(公告)号：US20220352033A1

公开(公告)日：2022-11-03

申请号：US17813000

申请日：2022-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20220271071A1

公开(公告)日：2022-08-25

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US20220262680A1

公开(公告)日：2022-08-18

申请号：US17740241

申请日：2022-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Barn CHEN ,  Ting-Huang KUO ,  Shiu-Ko JANGJIAN ,  Chi-Cherng JENG ,  Kuang-Yao LO

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/308 ,  H01L21/265 ,  H01L27/088 ,  H01L29/08

Abstract: A device includes a FinFET on a first region of a substrate and a planar-FET on a second region of the substrate. The FinFET includes a FinFET source region, a FinFET drain region, and a FinFET gate between the FinFET source region and the FinFET drain region. The planar-FET includes a planar-FET source region, a planar-FET drain region, and a planar-FET gate between the planar-FET source region and the planar-FET drain region. A bottommost position of the FinFET source region is lower than a bottommost position of the planar-FET source region.

公开(公告)号：US20200266110A1

公开(公告)日：2020-08-20

申请号：US15929546

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.