公开(公告)号：US20190148422A1

公开(公告)日：2019-05-16

申请号：US15879824

申请日：2018-01-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146 ,  H01L31/036

Abstract: A semiconductor device is operated for sensing incident light and includes a carrier, a device layer, and a semiconductor layer. The device layer is disposed on the carrier. The semiconductor layer is disposed on the device layer. The semiconductor layer includes light-sensing regions. The semiconductor layer has a first surface and a second surface opposite to the first surface that is adjacent to the device layer. The second surface has a lattice plane which is tilted with respect to a basal plane, and the semiconductor layer has various pit portions arranged on the second surface.

公开(公告)号：US20160190196A1

公开(公告)日：2016-06-30

申请号：US14675382

申请日：2015-03-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Feng-Chi HUNG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/80 ,  H01L24/82 ,  H01L24/92 ,  H01L24/94 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/14812 ,  H01L2224/24147 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/92 ,  H01L2224/9212 ,  H01L2224/80001 ,  H01L2224/82 ,  H01L2224/821

Abstract: A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate has at least one electrical component disposed thereon. The second substrate is stacked on the first substrate. The TVs extend through the second substrate to be electrically connected to the at least one electrical component of the first substrate. The conductive caps respectively cover the TVs, and the conductive caps are electrically isolated from each other.

Abstract translation: 半导体器件包括第一衬底，第二衬底，多个通孔（TV）和多个导电盖。 第一基板具有设置在其上的至少一个电气部件。 第二基板被堆叠在第一基板上。 电视机延伸穿过第二基板以电连接到第一基板的至少一个电气部件。 导电盖分别覆盖电视机，并且导电盖彼此电隔离。

公开(公告)号：US20220231075A1

公开(公告)日：2022-07-21

申请号：US17717489

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

公开(公告)号：US20210366957A1

公开(公告)日：2021-11-25

申请号：US17396693

申请日：2021-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146 ,  H01L31/036

Abstract: A method of forming a semiconductor device includes forming photodiodes extending from a front-side surface of a semiconductor layer into the semiconductor layer; forming transistors on the front-side surface of the semiconductor layer; forming an interconnect structure over the transistors, the interconnect structure comprising an inter-metal dielectric and metal lines in the inter-metal dielectric; etching first regions of a backside surface of the semiconductor layer to form trenches in the semiconductor layer and non-overlapping the photodiodes; after forming the trenches, etching second regions of the backside surface of the semiconductor layer to form pits in the semiconductor layer and overlapping the photodiodes; and depositing a dielectric material in the trenches and the pits.

公开(公告)号：US20210118939A1

公开(公告)日：2021-04-22

申请号：US17135590

申请日：2020-12-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kai-Chun HSU ,  Kuo-Cheng LEE ,  Shyh-Fann TING

IPC: H01L27/146 ,  H01L21/28

Abstract: A method includes depositing a gate dielectric layer over a substrate. A gate electrode layer, a protection oxide layer, and a hard mask are sequentially deposited over the gate dielectric layer. The gate electrode layer and the protection oxide layer are patterned by using the hard mask as an etching mask to form a gate structure over the gate dielectric layer. An etching process is performed to remove the hard mask and thin the protection oxide layer after forming the gate structure.

公开(公告)号：US20200091207A1

公开(公告)日：2020-03-19

申请号：US16687620

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.

公开(公告)号：US20200075661A1

公开(公告)日：2020-03-05

申请号：US16118335

申请日：2018-08-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.

公开(公告)号：US20190252436A1

公开(公告)日：2019-08-15

申请号：US16391009

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14685

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

公开(公告)号：US20190140006A1

公开(公告)日：2019-05-09

申请号：US15807980

申请日：2017-11-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The second isolation structure includes a light-blocking structure to absorb or reflect incident light.

公开(公告)号：US20190067356A1

公开(公告)日：2019-02-28

申请号：US15692395

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei LIN ,  Yin-Chieh HUANG ,  Yun-Wei CHENG ,  Yi-Hsing CHU ,  Cheng-Yuan LI ,  Chun-Hao CHOU

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.