公开(公告)号：US09437645B1

公开(公告)日：2016-09-06

申请号：US14663918

申请日：2015-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 复合网格包括金属网格和低折射率（low-n）网格。 金属栅格包括覆盖半导体衬底并对应于一个光电二极管的第一开口。 低n栅格包括覆盖半导体衬底并对应于光电二极管中的一个的第二开口。 彩色滤光器布置在相应的光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 滤色片的上表面相对于复合网格的上表面偏移。 还提供了用于制造BSI像素传感器的方法。

公开(公告)号：US12211871B2

公开(公告)日：2025-01-28

申请号：US17205158

申请日：2021-03-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146 ,  H01L31/107

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

公开(公告)号：US20230317758A1

公开(公告)日：2023-10-05

申请号：US17879556

申请日：2022-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ying Ho ,  Kuan-Hua Lin ,  Keng-Yu Chou ,  Kai-Chun Hsu ,  Sung-En Lin ,  Wen-De Wang ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: An optical device with isolation structures and a method of fabricating the same are disclosed. The optical device includes a substrate having a first surface and a second surface opposite to the first surface, first and second radiation sensing devices disposed in the substrate, a first isolation structure disposed in the substrate. The first isolation structure has a first surface and a second surface opposite to the first surface. The optical device further includes a second isolation structure disposed in the substrate and on the first surface of the first isolation structure. The second isolation structure includes a metal structure and a dielectric layer surrounding the metal structure. The second isolation structure vertically extends over the first surface of the substrate.

公开(公告)号：US20220328535A1

公开(公告)日：2022-10-13

申请号：US17372866

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

公开(公告)号：US20220320173A1

公开(公告)日：2022-10-06

申请号：US17216955

申请日：2021-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Cheng Yu Huang ,  Chun-Hao Chuang ,  Wen-Hau Wu ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

公开(公告)号：US20220302194A1

公开(公告)日：2022-09-22

申请号：US17205158

申请日：2021-03-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

公开(公告)号：US10998364B2

公开(公告)日：2021-05-04

申请号：US16405132

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes an image sensing element arranged within a substrate. One or more isolation structures are arranged within one or more trenches disposed on opposing sides of the image sensing element. The one or more isolation structures extend from a first surface of the substrate to within the substrate. The one or more isolation structures respectively include a reflective element configured to reflect electromagnetic radiation.

公开(公告)号：US10510795B1

公开(公告)日：2019-12-17

申请号：US16516451

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

公开(公告)号：US20190259797A1

公开(公告)日：2019-08-22

申请号：US16405132

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes an image sensing element arranged within a substrate. One or more isolation structures are arranged within one or more trenches disposed on opposing sides of the image sensing element. The one or more isolation structures extend from a first surface of the substrate to within the substrate. The one or more isolation structures respectively include a reflective element configured to reflect electromagnetic radiation.

公开(公告)号：US10319768B2

公开(公告)日：2019-06-11

申请号：US15688077

申请日：2017-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor integrated chip having a deep trench isolation (DTI) structure having a reflective element. In some embodiments, the image sensor integrated chip includes an image sensing element arranged within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element and one or more absorption enhancement layers are arranged over and between the plurality of protrusions. A plurality of DTI structures are arranged within trenches disposed on opposing sides of the image sensing element and extend from the first side of the substrate to within the substrate. The plurality of DTI structures respectively include a reflective element having one or more reflective regions configured to reflect electromagnetic radiation. By reflecting electromagnetic radiation using the reflective elements, cross-talk between adjacent pixel regions is reduced, thereby improving performance of the image sensor integrated chip.