公开(公告)号：US20200103746A1

公开(公告)日：2020-04-02

申请号：US16568044

申请日：2019-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih HUANG ,  Chi YANG ,  Che-Chang HSU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F1/24 ,  G03F7/20

Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

公开(公告)号：US20200075190A1

公开(公告)日：2020-03-05

申请号：US16551294

申请日：2019-08-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ting-Ya CHENG ,  Chun-Lin CHANG ,  Li-Jui CHEN ,  Han-Lung CHANG

IPC: G21K1/06 ,  H05G2/00

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

公开(公告)号：US20200057382A1

公开(公告)日：2020-02-20

申请号：US16535003

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Liu BO-TSUN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20200033732A1

公开(公告)日：2020-01-30

申请号：US16124357

申请日：2018-09-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

公开(公告)号：US20190163046A1

公开(公告)日：2019-05-30

申请号：US16151300

申请日：2018-10-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Wen CHO ,  Fu-Jye LIANG ,  Chun-Kuang CHEN ,  Chih-Tsung SHIH ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Chin-Hsiang LIN

IPC: G03F1/24 ,  G03F1/36 ,  G03F7/20

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

公开(公告)号：US20190150265A1

公开(公告)日：2019-05-16

申请号：US15868373

申请日：2018-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method includes generating targets with a fuel target generator. The method further includes measuring a period of time during which one of the targets passes through two detection positions on a path along which the targets move. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the fuel target generator or the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value.

公开(公告)号：US20190146349A1

公开(公告)日：2019-05-16

申请号：US16019732

申请日：2018-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Kuan WU ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Chih-Tsung SHIH

IPC: G03F7/20 ,  G03F1/24

Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

公开(公告)号：US20190137866A1

公开(公告)日：2019-05-09

申请号：US15906586

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen CHO ,  Fu-Jye LIANG ,  Chun-Kuang CHEN ,  Chih-Tsung SHIH ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Chin-Hsiang LIN

IPC: G03F1/64 ,  G03F7/22 ,  G03F7/20 ,  G03F1/22 ,  G06T7/00

Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.

公开(公告)号：US20190102875A1

公开(公告)日：2019-04-04

申请号：US16115699

申请日：2018-08-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zi-Wen CHEN ,  Po-Chung CHENG ,  Chih-Tsung SHIH ,  Li-Jui CHEN ,  Shih-Chang SHIH

IPC: G06T7/00 ,  G06T7/521 ,  G03F7/20 ,  G03F1/84

Abstract: A method of inspecting a reticle includes obtaining a first image of a surface of the reticle at a first height by scanning the reticle surface with a light source at the first height of the reticle surface relative to a reference surface height of the reticle surface and obtaining a second image of the reticle surface at a second height by scanning the reticle surface with the light source at the second height of the reticle surface relative to the reference surface height of the reticle surface. The second height is different from the first height. The first and the second images are then combined to obtain a surface profile image of the reticle.

公开(公告)号：US20190067132A1

公开(公告)日：2019-02-28

申请号：US15800568

申请日：2017-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih LAI ,  Li-Kai CHENG ,  Shun-Rong CHEN ,  Bo-Tsun LIU ,  Han-Lung CHANG ,  Tzung-Chi FU ,  Li-Jui CHEN

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/67 ,  G03F7/20

CPC classification number: H01L22/12 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67225 ,  H01L21/67253 ,  H01L21/67288

Abstract: A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.