公开(公告)号：US20190241430A1

公开(公告)日：2019-08-08

申请号：US16384066

申请日：2019-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Hua Lin ,  Chang-Ming Wu ,  Chung-Yi Yu ,  Ping-Yin Liu ,  Jung-Huei Peng

IPC: B81C1/00 ,  H01L23/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2207/07 ,  B81C1/00333 ,  B81C2201/0132 ,  B81C2203/0109 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L24/09 ,  H01L24/89 ,  H01L2224/091 ,  H01L2224/80013 ,  H01L2224/80895

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

公开(公告)号：US10294098B2

公开(公告)日：2019-05-21

申请号：US15855449

申请日：2017-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Hua Lin ,  Chang-Ming Wu ,  Chung-Yi Yu ,  Ping-Yin Liu ,  Jung-Huei Peng

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

公开(公告)号：US10012899B2

公开(公告)日：2018-07-03

申请号：US15356204

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Chue San Yoo ,  Jong-Yuh Chang ,  Chia-Shiung Tsai ,  Ping-Yin Liu ,  Hsin-Chang Lee ,  Chih-Cheng Lin ,  Yun-Yue Lin

IPC: G03F1/62 ,  G03F1/64 ,  H01L21/033 ,  C23C14/16 ,  C23C16/26 ,  C23C28/00 ,  C23C14/18

CPC classification number: G03F1/62 ,  C23C14/16 ,  C23C14/165 ,  C23C14/18 ,  C23C16/01 ,  C23C16/26 ,  C23C16/56 ,  C23C28/32 ,  G03F1/64 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.