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公开(公告)号:US5557276A
公开(公告)日:1996-09-17
申请号:US281294
申请日:1994-07-27
IPC分类号: H04N5/14 , H04N1/40 , H04N1/41 , H04N19/00 , H04N19/126 , H04N19/136 , H04N19/169 , H04N19/19 , H04N19/196 , H04N19/44 , H04N19/59 , H04N19/63 , H04N19/80 , H04N19/85 , H03M1/00
CPC分类号: H04N19/86 , H04N19/126 , H04N19/527 , H04N19/124 , H04N19/60
摘要: A quantizer designed by using human visual sensitivity is disclosed, in which when postprocessing is done after inverse quantization an optimum visual sensitivity function for a system involving the postprocessing is obtained for doing quantization by using that visual sensitivity function.Where the postprocessing that is executed after the inverse quantization consists of a filtering process with a characteristic L(.omega.) (.omega. being the frequency) and a 1:2 interpolation process, denoting the optimum visual sensitivity as the output result by W(.omega.) as shown in FIG. 2, the optimum equivalent sensitivity function W'(.omega.) is given asW'(.omega.)=1/2[L(.omega./2)W(.omega./2)+L(.omega./2+.pi.)W(.omega./2+.pi.)].By using this equivalent sensitivity function W'(.omega.) for the quantizer, it is possible to obtain a visually optimum quantizer designed by using human visual sensitivity.
摘要翻译: 公开了通过使用人类视觉灵敏度设计的量化器,其中当在逆量化后进行后处理时,通过使用该视觉灵敏度函数来获得涉及后处理的系统的最佳视觉灵敏度功能进行量化。 在逆量化后执行的后处理由具有特征L(ω)(ω为频率)和1:2内插处理的滤波处理构成,表示作为W(ω)的输出结果的最佳视觉灵敏度, 如图1所示。 如图2所示,最优等效灵敏度函数W'(ω)被给出为W'(ω)= + E,fra 1/2 + EE [L(ω/ 2)W(ω/ 2)+ L(ω/ pi)W(ω/ 2 + pi)]。 通过使用量化器的这种等效灵敏度函数W'(ω),可以获得通过使用人类视觉灵敏度设计的视觉最佳量化器。
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公开(公告)号:US09645494B2
公开(公告)日:2017-05-09
申请号:US12448130
申请日:2007-12-11
申请人: Masakazu Kato , Takahiro Hamada , Tomoyuki Enomoto
发明人: Masakazu Kato , Takahiro Hamada , Tomoyuki Enomoto
IPC分类号: G03F7/09 , G03F7/039 , G03F7/30 , G03F7/32 , H01L21/027
CPC分类号: G03F7/091 , G03F7/039 , G03F7/0392 , G03F7/30 , G03F7/322 , H01L21/0276
摘要: There is provided a resist underlayer film forming composition that is used in a lithography process for the production of semiconductor devices and that can be developed with an alkaline developer for photoresists, and a method of forming a photoresist pattern by using the resist underlayer film forming composition. The resist underlayer film forming composition used in a lithography process for a production of a semiconductor device comprising: an alkali-soluble resin (a); a polynuclear phenol (b); a compound (c) having at least two vinylether groups; and a photoacid generator (d). The alkali-soluble resin (a) may be a polymer containing a unit structure having a carboxyl group, and the polynuclear phenol (b) may be a compound having 2 to 30 phenolic hydroxyl groups in the molecule.
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公开(公告)号:US08663802B2
公开(公告)日:2014-03-04
申请号:US13587541
申请日:2012-08-16
申请人: Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
发明人: Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
IPC分类号: B32B9/00
CPC分类号: H01L21/02554 , C30B7/12 , C30B29/16 , H01L21/02376 , H01L21/02444 , H01L21/02513 , H01L21/02628
摘要: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.
摘要翻译: 在无定形碳层设置在便宜的石墨基板上之后,在无定形碳层上形成利用电解沉积法c轴取向的单晶氧化锌。 通过氧化石墨基板的表面来提供无定形碳层。
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公开(公告)号:US20120305401A1
公开(公告)日:2012-12-06
申请号:US13587541
申请日:2012-08-16
申请人: Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
发明人: Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
CPC分类号: H01L21/02554 , C30B7/12 , C30B29/16 , H01L21/02376 , H01L21/02444 , H01L21/02513 , H01L21/02628
摘要: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.
摘要翻译: 在无定形碳层设置在便宜的石墨基板上之后,在无定形碳层上形成利用电解沉积法c轴取向的单晶氧化锌。 通过氧化石墨基板的表面来提供无定形碳层。
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公开(公告)号:US08304803B2
公开(公告)日:2012-11-06
申请号:US13283985
申请日:2011-10-28
申请人: Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人: Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号: H01L21/00
摘要: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.
摘要翻译: 发光二极管包括堆叠在其中的n型氮化物半导体层,多量子阱,p型氮化物半导体层,窗口电极层,p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触,n型单晶ITO透明膜与n型单晶ZnO透明膜接触,p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga,Ga /(In + Ga)的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。
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公开(公告)号:US20120043524A1
公开(公告)日:2012-02-23
申请号:US13284294
申请日:2011-10-28
申请人: Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人: Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号: H01L33/06
CPC分类号: H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译: 发光二极管包括堆叠在其中的n型氮化物半导体层,多量子阱层,p型氮化物半导体层,窗口电极层,p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。
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公开(公告)号:US07896061B2
公开(公告)日:2011-03-01
申请号:US11795557
申请日:2006-02-01
申请人: Keiji Nakai , Tokumi Ikeda , Takahiro Hamada , Tsutomu Morikawa , Takashi Nishimura , Takuo Nakade
发明人: Keiji Nakai , Tokumi Ikeda , Takahiro Hamada , Tsutomu Morikawa , Takashi Nishimura , Takuo Nakade
IPC分类号: B22D11/059 , B22C3/00
CPC分类号: C23C2/00
摘要: The objective of the present invention is to provide a product that is superior in barrier properties (for example, zinc erosion resistance and anti-adhesive property), abrasion resistant property, surface hardening property, thermal stability and life-time prolonging property. The product, which is made in direct contact with molten metal containing zinc in a molten state, is characterized by including an iron-tungsten alloy coating that is applied to a part or the whole of the surface of the product that comes directly in contact with the molten metal.
摘要翻译: 本发明的目的是提供一种阻隔性(例如,耐锌侵蚀性和抗粘附性),耐磨损性,表面硬化性,热稳定性和使用寿命延长性优异的产品。 与熔融状态的含锌熔融金属直接接触的产品的特征在于包含铁 - 钨合金涂层,其被施加到直接接触的产品的部分或全部表面 熔融金属。
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公开(公告)号:US20110028361A1
公开(公告)日:2011-02-03
申请号:US12835705
申请日:2010-07-13
申请人: Shozaburo Konishi , Makoto Kano , Yoshiteru Yasuda , Yutaka Mabuchi , Takahiro Hamada , Shigeki Takeshima , Kenji Tsushima
发明人: Shozaburo Konishi , Makoto Kano , Yoshiteru Yasuda , Yutaka Mabuchi , Takahiro Hamada , Shigeki Takeshima , Kenji Tsushima
IPC分类号: C10M169/04 , C10M137/10
CPC分类号: F16C33/04 , C10M163/00 , C10M2203/1006 , C10M2205/0285 , C10M2207/028 , C10M2207/289 , C10M2215/042 , C10M2215/28 , C10M2219/046 , C10M2219/068 , C10M2223/045 , C10N2210/02 , C10N2210/06 , C10N2240/04 , C10N2240/10 , C10N2240/204 , F16C33/10 , F16C33/109 , F16C33/12 , F16C2204/20 , F16C2204/26 , F16C2206/04
摘要: A low-friction sliding mechanism includes first and second sliding members having respective sliding surfaces slidable relative to each other and a lubricant applied to the sliding surfaces of the first and second sliding members. At least the sliding surface of the first sliding member is made of a diamond-like carbon material, and at least the sliding surface of the second sliding member is made of either an aluminum-based alloy material, a magnesium-based alloy material or a diamond-like carbon material. The lubricant contains a base oil and at least one of an ashless fatty-ester friction modifier and an ashless aliphatic-amine friction modifier.
摘要翻译: 低摩擦滑动机构包括具有相对于彼此可滑动的相应滑动表面的第一和第二滑动构件以及施加到第一和第二滑动构件的滑动表面的润滑剂。 至少第一滑动构件的滑动表面由金刚石状碳材料制成,并且至少第二滑动构件的滑动表面由铝基合金材料,镁基合金材料或 类金刚石碳材料。 润滑剂含有基础油和无灰脂肪 - 酯摩擦改进剂和无灰脂肪族 - 胺摩擦改性剂中的至少一种。
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公开(公告)号:US20080276290A1
公开(公告)日:2008-11-06
申请号:US10587709
申请日:2006-01-13
IPC分类号: H04N7/173
CPC分类号: H04N19/89 , H04H20/12 , H04H60/12 , H04N21/2404
摘要: A monitoring system checks a transmission error of a video/audio signal transmitted from a source (10) to a destination (20A, 20B) by comparing in real time a first feature extracted from the pre-transmission video/audio signal and a second feature extracted from the post-transmission video/audio signal. The transmitted video/audio signal is repeatedly stored for a predetermined period of time. When the system judges that a transmission error has occurred, it transmits the stored video/audio signal to a predetermined address. Thus, the transmission error of the transmitted video/audio signal can be analyzed rapidly and in detail.
摘要翻译: 监视系统通过实时比较从预发送视频/音频信号提取的第一特征和一个预先发送的视频/音频信号提取的第一特征来检查从源(10)到目的地(20A,20B)发送的视频/音频信号的传输错误 从后传输视频/音频信号中提取的第二特征。 发送的视频/音频信号被重复存储预定的时间段。 当系统判断出发送错误时,将所存储的视频/音频信号发送到预定的地址。 因此,可以快速且详细地分析发送的视频/音频信号的传输错误。
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公开(公告)号:US20080211920A1
公开(公告)日:2008-09-04
申请号:US12121562
申请日:2008-05-15
IPC分类号: H04N17/00
CPC分类号: H04H20/12
摘要: A video/audio signal transmitted from a transmission source 10 to transmission destinations 20A and 20B is stored repeatedly for a predetermined time period. Thus, for example if the video/audio signal is overwritten at predetermined timing, it is sufficient to have a small storage capacity for the video/audio signal. Also, the video/audio signal on which an error has occurred remains without being overwritten at the time of determination that an error has occurred. Accordingly, by transmitting this signal to a predetermined destination, a detailed error analysis can be made promptly on the basis of the transmitted video/audio signal.
摘要翻译: 从发送源10发送到发送目的地20A和20B的视频/音频信号被重复存储预定时间段。 因此,例如,如果以预定的定时重写视频/音频信号,则对于视频/音频信号具有小的存储容量就足够了。 此外,发生错误的视频/音频信号在确定发生错误时保持不被覆盖。 因此,通过将该信号发送到预定目的地,可以基于发送的视频/音频信号迅速地进行详细的误差分析。
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