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    Light-emitting diode
    1.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08304803B2

    公开(公告)日：2012-11-06

    申请号：US13283985

    申请日：2011-10-28

    申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L21/00

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

    LIGHT-EMITTING DIODE
    2.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120043524A1

    公开(公告)日：2012-02-23

    申请号：US13284294

    申请日：2011-10-28

    申请人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L33/06

    CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    Light-emitting diode
    3.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08193548B2

    公开(公告)日：2012-06-05

    申请号：US13284294

    申请日：2011-10-28

    申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    Solar cell and method for fabricating the same
    4.
    发明授权
    Solar cell and method for fabricating the same 有权
    太阳能电池及其制造方法

    公开(公告)号：US08247684B2

    公开(公告)日：2012-08-21

    申请号：US13097860

    申请日：2011-04-29

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L27/14

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    Solar cell
    6.
    发明授权
    Solar cell 有权
    太阳能电池

    公开(公告)号：US08420431B2

    公开(公告)日：2013-04-16

    申请号：US13460525

    申请日：2012-04-30

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akio Matsushita

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akio Matsushita

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1884 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

    摘要翻译： 制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

    SOLAR CELL AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20120273038A1

    公开(公告)日：2012-11-01

    申请号：US13547939

    申请日：2012-07-12

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    IPC分类号： H01L31/0687 ,  H01L31/18

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。