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131 条记录 (耗时 0.028 秒)

    Light-emitting diode
    1.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08304803B2

    公开(公告)日：2012-11-06

    申请号：US13283985

    申请日：2011-10-28

    申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L21/00

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

    LIGHT-EMITTING DIODE
    2.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120043524A1

    公开(公告)日：2012-02-23

    申请号：US13284294

    申请日：2011-10-28

    申请人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L33/06

    CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    Light-emitting diode
    3.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08193548B2

    公开(公告)日：2012-06-05

    申请号：US13284294

    申请日：2011-10-28

    申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR
    4.
    发明申请
    PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR 有权
    光伏温度传感器和用于测量温度传感器的方法

    公开(公告)号：US20110299566A1

    公开(公告)日：2011-12-08

    申请号：US13207940

    申请日：2011-08-11

    申请人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    发明人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    IPC分类号： G01K7/36

    CPC分类号： H01L37/02 ,  G01K7/36

    摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

    摘要翻译： 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

    Pyroelectric temperature sensor and a method for measuring a temperature with the pyroelectric temperature sensor
    5.
    发明授权
    Pyroelectric temperature sensor and a method for measuring a temperature with the pyroelectric temperature sensor 有权
    热电温度传感器和用热电温度传感器测量温度的方法

    公开(公告)号：US08414187B2

    公开(公告)日：2013-04-09

    申请号：US13207940

    申请日：2011-08-11

    申请人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    发明人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    IPC分类号： G01K7/01 ,  G01J5/00

    CPC分类号： H01L37/02 ,  G01K7/36

    摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

    摘要翻译： 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT
    9.
    发明申请
    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT 有权
    压电发电元件及使用压电发电元件生成电力的方法

    公开(公告)号：US20110278991A1

    公开(公告)日：2011-11-17

    申请号：US13191139

    申请日：2011-07-26

    申请人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    发明人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    IPC分类号： H02N2/18

    CPC分类号： H02N2/186 ,  H01L41/1134

    摘要： Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

    摘要翻译： 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。