公开(公告)号：US20070292088A1

公开(公告)日：2007-12-20

申请号：US11761967

申请日：2007-06-12

申请人： Kenji Saitoh ,  Yoshiharu Tenmyo

发明人： Kenji Saitoh ,  Yoshiharu Tenmyo

IPC分类号： G02B6/04

CPC分类号： G03B15/05 ,  G02B19/0028 ,  G02B19/0047 ,  G03B2215/0528 ,  G03B2215/0532

摘要： An illuminating apparatus includes a light source including a cylindrical light-emitting tube, a first optical system, a second optical system, and a third optical system. The first optical system has an incident surface on which light emitted from the light source to the object side are incident and an emergent surface from which the light passing through the incident surface are emitted. The second optical system has a reflecting surface from which light emitted from the light source to a first side are reflected. The third optical system has a reflecting surface from which light emitted from the light source to a second side opposite to the first side are reflected. The first to third optical systems each illuminate the entire illumination area of the object with light emitted from the light source and incident on the optical systems.

摘要翻译： 照明装置包括：光源，包括圆柱形发光管，第一光学系统，第二光学系统和第三光学系统。 第一光学系统具有从光源发射到物体侧的光入射的入射表面，并且发射穿过入射表面的光的出射表面。 第二光学系统具有从光源发射到第一侧的光被反射的反射面。 第三光学系统具有从光源发射到与第一侧相对的第二侧的光的反射表面。 第一至第三光学系统各自使用从光源发射并入射到光学系统上的光来照亮物体的整个照明区域。

公开(公告)号：US06534242B2

公开(公告)日：2003-03-18

申请号：US09783600

申请日：2001-02-15

申请人： Mitsuro Sugita ,  Akiyoshi Suzuki ,  Miyoko Kawashima ,  Kenji Saitoh ,  Yuichi Iwasaki

发明人： Mitsuro Sugita ,  Akiyoshi Suzuki ,  Miyoko Kawashima ,  Kenji Saitoh ,  Yuichi Iwasaki

IPC分类号： G03C500

CPC分类号： G03F7/2022 ,  G03F7/7045 ,  G03F7/70466

摘要： An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements. A light component, of the light pattern, related to the first element bears an exposure amount greater than the threshold, a light component, of the light pattern, related to the second element bears an exposure amount not greater than the threshold and is to be combined with light in a portion of the interference fringe, and a sum of the exposure amount of the light component related to the second element and an exposure amount provided by the light in the portion of the interference fringe is greater than the threshold.

摘要翻译： 一种用于将器件图案转印到抗蚀剂的曝光方法，其中所述器件图案包括第一元件和具有比所述第一元件窄的线宽的第二元件。 该方法包括第一曝光步骤，用于通过使用由两个光束的干涉产生的干涉条纹曝光抗蚀剂，所述干涉条纹通过基本上不大于抗蚀剂阈值的曝光量，以及第二曝光步骤，用于将抗蚀剂与 与第一和第二元素相关的光图案。 与第一元件相关的光图案的光分量具有大于阈值的曝光量，与第二元件相关的光图案的光分量具有不大于阈值的曝光量，并且为 与干涉条纹的一部分中的光结合，并且与第二元素相关的光分量的曝光量与干涉条纹部分中的光提供的曝光量之和大于阈值。

公开(公告)号：US5891773A

公开(公告)日：1999-04-06

申请号：US898960

申请日：1997-07-23

申请人： Kenji Saitoh

发明人： Kenji Saitoh

IPC分类号： H01L21/8247 ,  H01L27/112 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： The invention provides a non-volatile semiconductor storage apparatus wherein silicon pillars are formed by epitaxial growth thereby to suppress a dispersion in channel length and improve the quality of a gate oxide film. In production, epitaxial silicon pillars are formed by selective epitaxial growth on a p-type silicon substrate, and a gate oxide film is formed over the overall area. Polycrystalline silicon is deposited and etched back to form a first polycrystalline silicon film serving as floating gates. Ion implantation is performed to form drain regions at the tops of the epitaxial silicon pillars and form a source region on the surface of the silicon substrate. A layered insulation film is formed, and polycrystalline silicon is deposited and etched back to form a second polycrystalline silicon film which covers over the side faces of the floating gates and serves as control gates. Bit lines are formed on the drain regions.

摘要翻译： 本发明提供了一种非易失性半导体存储装置，其中通过外延生长形成硅柱，从而抑制沟道长度的分散并提高栅极氧化膜的质量。 在生产中，通过在p型硅衬底上选择性外延生长形成外延硅柱，并且在整个区域上形成栅氧化膜。 多晶硅沉积并回蚀以形成用作浮栅的第一多晶硅膜。 进行离子注入以在外延硅柱的顶部形成漏极区，并在硅衬底的表面上形成源极区。 形成层状绝缘膜，沉积多晶硅并回蚀以形成覆盖在浮动栅极的侧面上并用作控制栅极的第二多晶硅膜。 位线形成在漏区。

公开(公告)号：US5717492A

公开(公告)日：1998-02-10

申请号：US788350

申请日：1997-01-27

申请人： Koichi Sentoku ,  Kenji Saitoh ,  Hiroshi Osawa ,  Masanobu Hasegawa

发明人： Koichi Sentoku ,  Kenji Saitoh ,  Hiroshi Osawa ,  Masanobu Hasegawa

IPC分类号： G03F9/00 ,  H01L21/027 ,  G01B11/00

CPC分类号： G03F9/70

摘要： A position detection apparatus and method detects the relative positional relationship between first and second objects facing each other in a facing direction. First, second and third marks each serving as a physical optical element are provided on the first object, while a fourth mark serving as a physical optical element is provided on the second object. A light projector projects light onto the first and second objects A light detector detects a first light beam diffracted by the first mark and reflected by the second object, a second light beam diffracted by the second mark and reflected by the second object, and a third light beam diffracted by the third and fourth marks. A first position detector detects the relative positional relationship between the first and second objects in the facing direction based on signals representing the first and second light beams from the light detector. A second position detector detects the relative positional relationship between the first and second objects in a direction perpendicular to the facing direction based on signals representing the first, second and third light beams from the light detector.

摘要翻译： 位置检测装置和方法检测朝向彼此面对的第一和第二物体之间的相对位置关系。 首先，在第一物体上设置各自用作物理光学元件的第二和第三标记，而在第二物体上设置用作物理光学元件的第四标记。 光投影仪将光投射到第一和第二物体上光检测器检测由第一标记衍射并由第二物体反射的第一光束，由第二标记衍射并被第二物体反射的第二光束，以及第三物体 光束被第三和第四标记衍射。 第一位置检测器基于表示来自光检测器的第一和第二光束的信号来检测面向方向上的第一和第二物体之间的相对位置关系。 第二位置检测器基于表示来自光检测器的第一，第二和第三光束的信号来检测第一和第二物体在垂直于相对方向的方向上的相对位置关系。

公开(公告)号：US5343291A

公开(公告)日：1994-08-30

申请号：US851109

申请日：1992-03-16

申请人： Mitsutoshi Ohwada ,  Masakazu Matsugu ,  Shigeyuki Suda ,  Minoru Yoshii ,  Yukichi Niwa ,  Noriyuki Nose ,  Kenji Saitoh ,  Masanobu Hasegawa

发明人： Mitsutoshi Ohwada ,  Masakazu Matsugu ,  Shigeyuki Suda ,  Minoru Yoshii ,  Yukichi Niwa ,  Noriyuki Nose ,  Kenji Saitoh ,  Masanobu Hasegawa

IPC分类号： G03F9/00 ,  G01B11/02

CPC分类号： G03F9/7023 ,  G03F9/7049

摘要： A device for measuring an interval between two plate-like objects includes a light source for projecting a light toward the objects, a detector for detecting a position of incidence, upon a predetermined surface, of the light projected by the light source and deflected by the two objects, and a calculating portion for measuring the interval of the two objects on the basis of the detection by the detector.

摘要翻译： 用于测量两个板状物体之间的间隔的装置包括：用于向物体投射光的光源;检测器，用于检测由光源投射并被光源偏转的预定表面上的入射位置; 两个物体和用于根据检测器的检测来测量两个物体的间隔的计算部分。

公开(公告)号：US5332692A

公开(公告)日：1994-07-26

申请号：US47632

申请日：1993-04-19

申请人： Kenji Saitoh

发明人： Kenji Saitoh

IPC分类号： H01L21/203 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283

CPC分类号： H01L21/76838 ,  H01L21/76889 ,  Y10S148/017 ,  Y10S148/019

摘要： A sputtering technique is conducted within a sputtering device the inside of which is in the state of vacuum, whereby a second polycrystal silicon film (7) is deposited on a first polycrystal silicon film (3) on the surface of which a natural oxide film (4) exists. The inside of the sputtering device is maintained to be in the state of vacuum after the second polycrystal silicon film (7) is formed. With the same sputtering device, a metal silicide film (5) is deposited on the second polycrystal film under vacuum. When a silicon oxide film is formed on the silicide film, silicons to be oxidized are uniformly supplied through the silicide film. Therefore, the polycrystal silicon film and the silicide film are not separated from each other at the boundary face between them. Further, product yield rate is improved since it is not necessary to perform sputter etching.

摘要翻译： 溅射技术在其内部处于真空状态的溅射装置内进行，由此第二多晶硅膜（7）沉积在第一多晶硅膜（3）上，该第一多晶硅膜（3）的表面上具有天然氧化物膜（ 4）存在。 在第二多晶硅膜（7）形成之后，溅射装置的内部保持在真空状态。 使用相同的溅射装置，在真空下在第二多晶膜上沉积金属硅化物膜（5）。 当在硅化物膜上形成氧化硅膜时，通过硅化物膜均匀地供给被氧化的硅。 因此，多晶硅膜和硅化物膜在它们之间的边界面处不分离。 此外，由于不需要进行溅射蚀刻，产品产率提高。

公开(公告)号：US5319444A

公开(公告)日：1994-06-07

申请号：US20464

申请日：1993-02-22

申请人： Kenji Saitoh ,  Masakazu Matsugu ,  Yukichi Niwa ,  Noriyuki Nose ,  Minoru Yoshii ,  Shigeyuki Suda

发明人： Kenji Saitoh ,  Masakazu Matsugu ,  Yukichi Niwa ,  Noriyuki Nose ,  Minoru Yoshii ,  Shigeyuki Suda

IPC分类号： G03F9/00 ,  G01B11/14 ,  G01N21/86

CPC分类号： G03F9/7049

摘要： A method of detecting relative positional deviation between first and second objects. The method includes the steps of providing the first object with a first mark which functions as a lens, providing the second object with a second mark which functions as a lens, providing an optical system between the first and second objects, directing a radiation beam through the first mark and the optical system to the second mark, and detecting any shift of the radiation beam from the second mark irradiated with the radiation beam from the optical system, to detect the relative positional deviation of the first and second objects.

摘要翻译： 一种检测第一和第二物体之间的相对位置偏差的方法。 该方法包括以下步骤：向第一物体提供用作透镜的第一标记，为第二物体提供用作透镜的第二标记，在第一和第二物体之间提供光学系统，引导辐射束通过 第一标记和第二标记的光学系统，并且检测来自用来自光学系统的辐射束照射的第二标记的辐射束的任何偏移，以检测第一和第二物体的相对位置偏差。

公开(公告)号：US5294980A

公开(公告)日：1994-03-15

申请号：US58662

申请日：1993-05-10

申请人： Masakazu Matsugu ,  Kenji Saitoh ,  Yukichi Niwa ,  Noriyuki Nose ,  Ryo Kuroda ,  Shigeyuki Suda

发明人： Masakazu Matsugu ,  Kenji Saitoh ,  Yukichi Niwa ,  Noriyuki Nose ,  Ryo Kuroda ,  Shigeyuki Suda

IPC分类号： G03F9/00 ,  G01B11/00 ,  G01N21/85

CPC分类号： G03F9/70

摘要： A device for detecting a relative positional relationship between first and second objects with respect to a predetermined direction includes an illumination system for irradiating the first object with light, wherein the first and second objects are provided with first and second physical optic elements, respectively, each having a light converging or diverging function in at least one direction and wherein the illumination system illuminates the first physical optic element. A photodetecting system detects light passing through the first object and emanating from the second object, and is operable to detect light convergently or divergently influenced by both of the first and physical optic elements, such that the relative positional relationship between the first and second objects can be detected on the basis of the detection by the photodetecting system. At least one of the first and second physical optic elements has a light converging or diverging function in a direction perpendicular to the one direction and has different focal lengths in the perpendicular direction and in the one direction.

摘要翻译： 用于检测相对于预定方向的第一和第二物体之间的相对位置关系的装置包括用于用光照射第一物体的照明系统，其中第一和第二物体分别设置有第一和第二物理光学元件， 在至少一个方向上具有聚光或发散功能，并且其中所述照明系统照亮所述第一物理光学元件。 光检测系统检测穿过第一物体并从第二物体发出的光，并且可操作以从第一物理光学元件和物理光学元件两者收敛或分散地检测光，使得第一和第二物体之间的相对位置关系 基于光检测系统的检测来检测。 第一和第二物理光学元件中的至少一个在垂直于一个方向的方向上具有聚光或发散功能，并且在垂直方向和一个方向上具有不同的焦距。

公开(公告)号：US5229617A

公开(公告)日：1993-07-20

申请号：US972726

申请日：1992-11-06

申请人： Kenji Saitoh ,  Masakazu Matsugu

发明人： Kenji Saitoh ,  Masakazu Matsugu

IPC分类号： G03F9/00

CPC分类号： G03F9/7076 ,  G03F9/7049

摘要： A method of detecting the position of a substrate by using a grating pattern formed on the substrate is disclosed. In this method, a radiation beam is projected to the grating pattern by which a diffraction beam is produced and received by a sensor, wherein any reflectively scattered light from an edge of an outer peripheral part of the diffraction pattern is substantially prevented from being received by the sensor; and wherein an output signal from the sensor responsive substantially only to the diffraction beam from the grating pattern is used to determine the position of the substrate.

摘要翻译： 公开了通过使用形成在基板上的光栅图案来检测基板的位置的方法。 在这种方法中，辐射束被投射到光栅图案上，通过该光栅图案由传感器产生和接收衍射光束，其中基本上防止了衍射图案的外周部分的边缘的任何反射散射的光被 传感器; 并且其中来自传感器的输出信号基本上仅响应于来自光栅图案的衍射光束被用于确定基板的位置。

公开(公告)号：US5196711A

公开(公告)日：1993-03-23

申请号：US643475

申请日：1991-01-22

申请人： Masakazu Matsugu ,  Kenji Saitoh

发明人： Masakazu Matsugu ,  Kenji Saitoh

IPC分类号： G01B11/14 ,  G02B7/28 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F9/7076 ,  G03F9/7023

摘要： A device for detecting relative positional deviation between a mask and a wafer is disclosed, wherein the mask has a first grating pattern and a zone plate pattern and the wafer has a second grating pattern. The device includes a directing system for directing a radiation beam to the first grating pattern of the mask, such that the first grating pattern produces a first transmitted beam which is then inputted to the wafer substantially perpendicularly and a second transmitted beam which is obliquely inputted to the wafer and such that the first grating pattern also produces a first reflected beam; and a detecting system for detecting (i) the first reflected beam and also for detecting (ii) a second reflected beam resulting from reflective diffraction of the first transmitted beam by the second diffraction pattern of the wafer, the third reflected beam being displaceable with any inclination of a surface of the wafer and (iii) a third reflected beam resulting from reflection of the second transmitted beam by the wafer surface and from diffraction of the same by the zone plate pattern of the mask and being displaceable with any inclination of the wafer surface and an interval between the mask and the wafer.