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74 条记录 (耗时 0.019 秒)

    ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT USING THE SAME
    33.
    发明申请
    ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT USING THE SAME 审中-公开
    电化学元件用电极及其电化学元件

    公开(公告)号：US20080248388A1

    公开(公告)日：2008-10-09

    申请号：US12098126

    申请日：2008-04-04

    申请人： Takashi Ohtsuka ,  Kaoru Nagata ,  Hideharu Takezawa ,  Shoichi Imashiku

    发明人： Takashi Ohtsuka ,  Kaoru Nagata ,  Hideharu Takezawa ,  Shoichi Imashiku

    IPC分类号： H01M4/24 ,  H01M4/38

    CPC分类号： H01M4/70 ,  H01M4/0404 ,  H01M4/134 ,  H01M10/0525 ,  H01M2004/027

    摘要： The invention presents an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising a current collector forming a concave portion and a convex portion at least on one side, and a columnar body including an active material formed on the convex portion of the current collector, in which the columnar body covers at least a part of respective sides of the convex portion. By this configuration, an electrode for an electrochemical element of long life and excellent reliability is realized.

    摘要翻译： 本发明提出了一种用于电化学元件的用于可逆地插入和提取锂离子的电极，包括至少在一侧形成凹部和凸部的集电体，以及包括形成在凸部上的活性材料的柱状体 柱状体覆盖凸部的各侧的至少一部分的集电体。 通过这种构造，实现了长寿命和高可靠性的电化学元件用电极。

    MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT
    34.
    发明申请
    MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT 审中-公开
    电化学元件电极的制造方法

    公开(公告)号：US20080248189A1

    公开(公告)日：2008-10-09

    申请号：US12061479

    申请日：2008-04-02

    申请人： Takashi Ohtsuka ,  Kaoru Nagata ,  Hideharu Takezawa ,  Shoichi Imashiku

    发明人： Takashi Ohtsuka ,  Kaoru Nagata ,  Hideharu Takezawa ,  Shoichi Imashiku

    IPC分类号： H01M4/04

    CPC分类号： H01M4/70 ,  H01M4/0423 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/364 ,  H01M10/0525

    摘要： The invention presents a manufacturing method of an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising; forming a concave portion and a convex portion at least on one side of a current collector, preparing a raw material containing a element for composing an active material, introducing a specified supply amount of the raw material and a carrier gas into a film forming device to form a plasma, and injecting the plasma of the raw material on the current collector, in which the active material is grown on the convex portion of the current collector, and a columnar body is formed by covering at least a part of respective sides of the convex portion.

    摘要翻译： 本发明提出了用于电化学元件的电极的制造方法，用于可逆地插入和提取锂离子，包括： 在集电体的至少一侧形成凹部和凸部，准备含有构成活性物质的元素的原料，将规定的原料和载气的供给量引入成膜装置， 形成等离子体，并且将原料的等离子体注入到集电体上，其中活性材料在集电体的凸部上生长，并且通过覆盖所述集电体的两侧的至少一部分来形成柱状体 凸部。

    Semiconductor device and method for fabricating the same
    35.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070131997A1

    公开(公告)日：2007-06-14

    申请号：US11522982

    申请日：2006-09-19

    申请人： Takashi Ohtsuka ,  Takashi Nakabayashi ,  Yoshiyuki Shibata

    发明人： Takashi Ohtsuka ,  Takashi Nakabayashi ,  Yoshiyuki Shibata

    IPC分类号： H01L29/94

    CPC分类号： H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/31641 ,  H01L21/31645

    摘要： A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.

    摘要翻译： 半导体器件包括通过在衬底上连续堆叠下电极，电容器电介质膜和上电极而形成的电容器。 下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层，并且电容器电介质膜形成为与下部电极的第二导电层接触 电极。

    Non-volatile flip flop
    36.
    发明授权
    Non-volatile flip flop 失效
    非易失性触发器

    公开(公告)号：US07206217B2

    公开(公告)日：2007-04-17

    申请号：US10754058

    申请日：2004-01-09

    申请人： Takashi Ohtsuka ,  Hideyuki Tanaka

    发明人： Takashi Ohtsuka ,  Hideyuki Tanaka

    IPC分类号： G11C11/40

    CPC分类号： G11C14/0072 ,  G11C8/16 ,  G11C13/0004 ,  G11C14/009 ,  H01L21/28291 ,  H01L27/101 ,  H01L27/11 ,  H03K3/356008

    摘要： A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).

    摘要翻译： 根据本发明的非易失性触发器包括：触发器部分（4），具有用于存储一对反逻辑数据元素的一对存储器节点（5,6）; 以及一对非易失性电阻变化元件（11,12），它们分别通过开关元件（9,10）连接到一对存储器节点（5,6），并且其电阻变化以便保持， 其特征在于，在存储操作中，所述一对非易失性电阻变化元件（11,12）的电阻可以根据所述一对存储器节点（5,6）的各自的电位而变化，并且在回调操作中， 可以根据所述一对非易失性电阻变化元件（11,12）之间的电阻差分别将所述一对存储器节点（5,6）置于电位上。

    Nonvolatile flip-flop circuit and method of driving the same
    37.
    发明申请
    Nonvolatile flip-flop circuit and method of driving the same 有权
    非易失性触发电路及其驱动方法

    公开(公告)号：US20050206421A1

    公开(公告)日：2005-09-22

    申请号：US11080454

    申请日：2005-03-16

    申请人： Takashi Nishikawa ,  Kenji Toyoda ,  Takashi Ohtsuka

    发明人： Takashi Nishikawa ,  Kenji Toyoda ,  Takashi Ohtsuka

    IPC分类号： G11C11/22 ,  H03K3/356 ,  H03K3/289

    CPC分类号： H03K3/356008 ,  G11C11/22

    摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).

    摘要翻译： 本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件 时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q） 状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态 的铁电栅极晶体管（601）。

    Ferroelectric element and a ferroelectric gate device using the same
    38.
    发明申请
    Ferroelectric element and a ferroelectric gate device using the same 有权

    公开(公告)号：US20050146917A1

    公开(公告)日：2005-07-07

    申请号：US11052794

    申请日：2005-02-09

    申请人： Kenji Toyoda ,  Takashi Ohtsuka

    发明人： Kenji Toyoda ,  Takashi Ohtsuka

    IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/866 ,  H03K17/62

    CPC分类号： G11C11/22

    摘要： A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor or a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1) comprises is applied to said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor (1).

    Measuring apparatus and method for measuring characteristic of solar cell
    39.
    发明授权
    Measuring apparatus and method for measuring characteristic of solar cell 失效
    用于测量太阳能电池特性的测量装置和方法

    公开(公告)号：US06639421B1

    公开(公告)日：2003-10-28

    申请号：US09691130

    申请日：2000-10-19

    申请人： Takehito Yoshino ,  Takashi Ohtsuka

    发明人： Takehito Yoshino ,  Takashi Ohtsuka

    IPC分类号： G01R3126

    CPC分类号： H02S50/10

    摘要： A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.

    摘要翻译： 照射太阳能电池的感光面的规定面积，测定电压 - 电流特性。 注意，未被照亮的光感测表面的其余部分称为暗区。 接下来，在光敏表面不被照亮的暗状态下，测量太阳能电池的暗特性。 所获得的暗特性乘以暗区的面积与感光面的面积的比值，由此计算暗区的暗特性。 然后，计算测量的电压与电流特性之间的差异特性和黑暗区域的暗特性。 差分特性乘以感光表面的面积与照射部分的面积的比率，从而在与感光面的整个面积相对应的状态下的太阳能电池的电压对电流特性 立即照射表面。