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公开(公告)号：US07715812B2
公开(公告)日：2010-05-11
申请号：US11776851
申请日：2007-07-12
申请人： Takayuki Tsutsui , Yasutaka Nihongi
发明人： Takayuki Tsutsui , Yasutaka Nihongi
IPC分类号： H04B1/16
CPC分类号： H03G3/3047 , H03F1/0205 , H03F1/0261 , H03F3/191 , H03F3/60 , H03F3/72 , H03F2200/111 , H03F2200/27 , H03F2200/451 , H03F2203/7209 , H03G3/3042
摘要： Transmission in DCS1800, PCS1900, and WCDMA1900 is performed by a common second RE power amplifier. In DCS1800 and DCS1900, transmission power is set in a high transmission power mode at 33 dBm by a high-gain input amplifier to activate an internal voltage follower of a bias circuit, and in WCDMA1900, in a low transmission power mode at 28 to 29 dBm by a low-gain input amplifier to inactivate the voltage follower. Switching of the high and low transmission power modes and controlling the voltage follower are performed according to a mode signal. In an RF power amplifier module that transmits frequencies of GSM850, GSM900, DCS1800, PCS1900, and WCDMA1900, it is possible to reduce the number of power amplifiers and, for ramp-up and ramp-down of the GSM standard, to perform high-speed control of an input bias voltage and reduce noise of a transmission power of a wideband WCDMA.
摘要翻译： DCS1800，PCS1900和WCDMA1900中的传输由公共第二RE功率放大器执行。 在DCS1800和DCS1900中，通过高增益输入放大器将发射功率设置在33 dBm的高发射功率模式，以激活偏置电路的内部电压跟随器，而在WCDMA1900中，在28至29的低发射功率模式 dBm由低增益输入放大器灭极电压跟随器。 根据模式信号执行高，低发射功率模式的切换和电压跟随器的控制。 在发射GSM850，GSM900，DCS1800，PCS1900和WCDMA1900的频率的RF功率放大器模块中，可以减少功率放大器的数量，并且对于GSM标准的斜坡上升和下降， 速度控制输入偏置电压并降低宽带WCDMA的发射功率的噪声。
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公开(公告)号：US20080024225A1
公开(公告)日：2008-01-31
申请号：US11776851
申请日：2007-07-12
申请人： Takayuki Tsutsui , Yasutaka Nihongi
发明人： Takayuki Tsutsui , Yasutaka Nihongi
IPC分类号： H03G3/00
CPC分类号： H03G3/3047 , H03F1/0205 , H03F1/0261 , H03F3/191 , H03F3/60 , H03F3/72 , H03F2200/111 , H03F2200/27 , H03F2200/451 , H03F2203/7209 , H03G3/3042
摘要： Transmission in DCS1800, PCS1900, and WCDMA1900 is performed by a common second RF power amplifier. In DCS1800 and DCS1900, transmission power is set in a high transmission power mode at 33 dBm by a high-gain input amplifier to activate an internal voltage follower of a bias circuit, and in WCDMA1900, in a low transmission power mode at 28 to 29 dBm by a low-gain input amplifier to inactivate the voltage follower. Switching the high and low transmission power modes and controlling the voltage follower are performed according to a mode signal. In an RF power amplifier module that transmits frequencies of GSM850, GSM900, DCS1800, PCS1900, and WCDMA1900, it is possible to reduce the number of power amplifiers and, for ramp-up and ramp-down of the GSM standard, to perform high-speed control of an input bias voltage and reduce noise of a transmission power of a wideband WCDMA.
摘要翻译： DCS1800，PCS1900和WCDMA1900中的传输由公共第二RF功率放大器执行。 在DCS1800和DCS1900中，通过高增益输入放大器将发射功率设置在33 dBm的高发射功率模式，以激活偏置电路的内部电压跟随器，而在WCDMA1900中，在28至29的低发射功率模式 dBm由低增益输入放大器灭极电压跟随器。 根据模式信号执行切换高低功率模式和控制电压跟随器。 在发射GSM850，GSM900，DCS1800，PCS1900和WCDMA1900的频率的RF功率放大器模块中，可以减少功率放大器的数量，并且对于GSM标准的斜坡上升和下降， 速度控制输入偏置电压并降低宽带WCDMA的发射功率的噪声。
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公开(公告)号：US07227415B2
公开(公告)日：2007-06-05
申请号：US11540510
申请日：2006-10-02
申请人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
发明人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
CPC分类号： H03F1/0211 , H03F2200/408 , H03G3/3047
摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.
摘要翻译： 提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。 在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管 为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。 用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。
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公开(公告)号：US20070030073A1
公开(公告)日：2007-02-08
申请号：US11540510
申请日：2006-10-02
申请人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
发明人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
IPC分类号： H03G3/10
CPC分类号： H03F1/0211 , H03F2200/408 , H03G3/3047
摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.
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公开(公告)号：US07123094B2
公开(公告)日：2006-10-17
申请号：US10821935
申请日：2004-04-12
申请人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
发明人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
IPC分类号： H03G3/30
CPC分类号： H03F1/0211 , H03F2200/408 , H03G3/3047
摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.
摘要翻译： 提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。 在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管 为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。 用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。
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公开(公告)号：US20060006944A1
公开(公告)日：2006-01-12
申请号：US11227160
申请日：2005-09-16
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/301
摘要： A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
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公开(公告)号：US06756850B2
公开(公告)日：2004-06-29
申请号：US10147065
申请日：2002-05-17
IPC分类号： H03G310
CPC分类号： H03G3/3042 , H03F1/301
摘要： A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
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公开(公告)号：US5666455A
公开(公告)日：1997-09-09
申请号：US713867
申请日：1996-09-13
申请人： Masahiro Aoki , Tatemi Ido , Takayuki Tsutsui , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai , Atsushi Nakamura
发明人： Masahiro Aoki , Tatemi Ido , Takayuki Tsutsui , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai , Atsushi Nakamura
CPC分类号： H01S5/22 , G02B6/10 , G02B2006/12097 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02B2006/12176 , H01S5/12 , H01S5/209 , H01S5/4025
摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.
摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。
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