摘要:
In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.
摘要:
A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.
摘要:
An inexpensive surface acoustic wave device that increases an acoustic velocity of a surface acoustic wave and an electromechanical coupling coefficient includes a piezoelectric substrate in which a LiNbO3 single-crystal plate having Euler angles (0°, 67° to 160°, −5° to +5°) or (90°, 51° to 133°, −5° to +5°) is provided on a high acoustic-velocity substrate in which an acoustic velocity of a transverse wave is in a range of about 5400 m/sec to about 8660 m/sec or lower, and an electrode provided on the piezoelectric substrate and made of metal.
摘要:
A surface acoustic wave sensor is capable of detecting a specific detection object with high accuracy and is excellent in economy. The surface acoustic wave sensor includes a piezoelectric substrate and a comb shaped electrode disposed on the piezoelectric substrate to detect a specific detection object on the basis of a change in output signal. At least a portion of the comb shaped electrode is electrically conductive and is made of a sensitive material which responds to the above-described specific detection object.
摘要:
A surface acoustic wave device includes a LiTaO3 substrate, and an IDT having a high reflection coefficient, which has a relatively high electromechanical coupling coefficient k2, and which can obtain superior resonance characteristics and/or filter characteristics. In a surface acoustic wave device in which a plurality of grooves is provided in an upper surface of a LiTaO3 substrate and an IDT having a plurality of electrode fingers made of a metal filled in the plurality of grooves, the following equation is satisfied:(ρ3×C44)1/2>1.95×1011, where ρ represents the density of the metal defining the IDT, and C44 represents the stiffness thereof.
摘要:
A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.
摘要:
A surface acoustic wave device includes a LiNbO3 substrate with a Euler angle in an area defined by a rectangle having four corners with coordinates (1) (0°, 7°, 101°), (2) (0°, 23°, 79°), (3) (0°, 23°, 79°), and (4) (0°, 7°, 79°), for example, and an electrode film made of Au, wherein surface acoustic waves including a longitudinal wave component as a main component are propagated thereon. The surface acoustic wave device uses longitudinal surface acoustic waves having a phase speed greater than with the “slow transverse wave”, and has a great electromechanical coupling coefficient and small propagation loss, and is suitable for handling high-frequency signals.
摘要:
A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要:
A method for detecting a substance in a liquid with high accuracy and high sensitivity includes recording frequency drifts of output frequencies of oscillator circuit outputs of m sensing oscillator circuits respectively including sensing SAW elements and frequency drifts of output frequencies of oscillator circuit outputs of n reference oscillator circuits respectively including reference SAW elements; determining at least one of the sensing oscillator circuits whose frequency drifts fall within a predetermined range and at least one of the reference oscillator circuits whose frequency drifts fall within the predetermined range to be acceptable; selecting at least one of the sensing oscillator circuits from among the acceptable sensing oscillator circuits and at least one of the reference oscillator circuits from among the acceptable reference oscillator circuits; and comparing an oscillator circuit output of the selected at least one of sensing oscillator circuits with an oscillator circuit output of the selected at least one of reference oscillator circuits to thereby detect a detection target substance.
摘要:
A sensor for detecting a substance in liquid includes a sensing circuit including a sensing surface acoustic wave (SAW) element in which a reaction film to react with a substance in liquid, a reference circuit including a reference SAW element including an IDT and not including a reaction film, a first signal source driving the sensing circuit, a second signal source driving the reference circuit and being independent of the first signal source, and a differential circuit arranged to output a differential output between an output of the sensing circuit and an output of the reference circuit. The frequency of a first frequency signal output from the first signal source is different from the frequency of a second frequency signal output from the second signal source, thereby making a driving frequency for the sensing SAW element and a driving frequency for the reference SAW element substantially the same as or different from one another.