公开(公告)号：US06404023B1

公开(公告)日：2002-06-11

申请号：US09758388

申请日：2001-01-12

申请人： Katsumi Mori ,  Kei Kawahara ,  Yoshikazu Kasuya

发明人： Katsumi Mori ,  Kei Kawahara ,  Yoshikazu Kasuya

IPC分类号： H01L2976

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903

摘要： A semiconductor device comprising a peripheral circuit portion and a memory cell portion including a plurality of memory cells. Each memory cell has first and second gate-gate connecting layers, first and second drain-drain connecting layers, and first and second drain-gate connecting layers. The first and second gate-gate connecting layers respectively connect the gates of driver transistors to the gates of load transistors. The first and second drain-drain connecting layers are formed over a first interlayer dielectric and respectively connect the drains of driver transistors to the drains of load transistors. The first and second drain-gate connecting layers are formed over a second interlayer dielectric and respectively connect the first drain-drain connecting layer to the second gate-gate connecting layer and the second drain-drain connecting layer to the first gate-gate connecting layer.

摘要翻译： 一种半导体器件，包括外围电路部分和包括多个存储单元的存储单元部分。 每个存储单元具有第一和第二栅极栅极连接层，第一和第二漏极 - 漏极连接层以及第一和第二漏极 - 栅极连接层。 第一和第二栅极连接层分别将驱动晶体管的栅极连接到负载晶体管的栅极。 第一和第二漏极 - 漏极连接层形成在第一层间电介质上，并分别将驱动晶体管的漏极连接到负载晶体管的漏极。 第一和第二漏极 - 栅极连接层形成在第二层间电介质上，并且将第一漏极 - 漏极连接层与第二栅极 - 栅极连接层和第二漏极 - 漏极连接层分别连接到第一栅极 - 栅极连接层 。

公开(公告)号：US5587335A

公开(公告)日：1996-12-24

申请号：US501660

申请日：1995-07-12

申请人： Katsumi Mori ,  Tatsuya Asaka ,  Hideaki Iwano ,  Takayuki Kondo

发明人： Katsumi Mori ,  Tatsuya Asaka ,  Hideaki Iwano ,  Takayuki Kondo

IPC分类号： H01L33/00 ,  H01S5/183 ,  H01S5/42 ,  H01L21/20

CPC分类号： H01S5/18369 ,  H01L33/0062 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/18 ,  H01S5/18308 ,  H01S5/18338 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/2211 ,  H01S5/2224 ,  H01S5/4068

摘要： In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.

摘要翻译： 为了制造表面发射型半导体激光器，通过有机金属蒸气生长法在衬底上依次形成包括多层半导体镜，包层，有源层等的多个半导体层。 然后在半导体层上形成光致抗蚀剂掩模。 至少通过使用光致抗蚀剂掩模对半导体层中的包覆层进行各向异性蚀刻。 因此，至少一个柱状部分形成为具有垂直于衬底延伸的侧壁并且在垂直于衬底的方向上引导光。 此后，在柱状部分周围形成包括在至少覆盖柱状部分的侧壁的区域上形成的单层的埋层。 在其出射端的柱状部分中沉积多层电介质镜。 多层电介质反射镜设置在光出射侧电极的光出射口。 为了增加光出射侧电极之下的反射率，可以在比包层更靠近光出射侧的位置的柱状部分中形成多层半导体镜。

公开(公告)号：US5295148A

公开(公告)日：1994-03-15

申请号：US13024

申请日：1993-02-02

申请人： Katsumi Mori ,  Tatsuya Asaka ,  Hideaki Iwano ,  Takayuki Kondo

发明人： Katsumi Mori ,  Tatsuya Asaka ,  Hideaki Iwano ,  Takayuki Kondo

IPC分类号： H01L33/00 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01L33/0062 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/423 ,  H01S2301/166 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/2211 ,  H01S5/2224 ,  H01S5/4068

摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.

摘要翻译： 表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状 在垂直于半导体衬底的方向延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。 柱状部分在与半导体衬底平行的平面中具有矩形横截面并且具有较长和较短的侧面，由此所述发射的激光束的偏振面平行于所述短边的方向。

公开(公告)号：US20120144644A1

公开(公告)日：2012-06-14

申请号：US13391113

申请日：2010-06-25

申请人： Kazumi Kurayoshi ,  Ryo Kato ,  Katsumi Mori ,  Yoshihito Doi

发明人： Kazumi Kurayoshi ,  Ryo Kato ,  Katsumi Mori ,  Yoshihito Doi

IPC分类号： B23P19/00

CPC分类号： F27D1/1694 ,  C21B7/06 ,  C21B9/04 ,  C21B9/06 ,  Y02P10/212 ,  Y10T29/4935 ,  Y10T29/49352 ,  Y10T29/49721 ,  Y10T29/49726 ,  Y10T29/4973 ,  Y10T29/49815 ,  Y10T29/49819 ,  Y10T29/49822

摘要： A method for dismantling a furnace having a multilayered refractory structure including: a furnace shell; a containing layer that is formed of a containing refractory that contains asbestos, and covers the inner side of the furnace shell; and a multilayered non-containing layer that is formed of a non-containing refractory that contains no asbestos, and covers the inner side of the containing layer, the method includes: a primary dismantling process; and a secondary dismantling process conducted after the primary dismantling process. In the primary dismantling process, the non-containing layer is dismantled from a furnace-core side thereof but the containing layer and at least one layer of the layers forming the non-containing layer, which is in contact with the containing layer, are left as a remnant. In the secondary dismantling process, the remnant is dismantled while asbestos measures are implemented.

摘要翻译： 一种用于拆卸具有多层耐火结构的炉的方法，包括：炉壳; 由含有石棉的含有耐火材料形成并覆盖炉壳的内侧的容纳层; 以及由含有不含石棉的不含有耐火材料形成并且覆盖所述含有层的内侧的多层非含水层，所述方法包括：主要拆解工序; 并在主要拆解过程之后进行二次拆除。 在主要的拆除过程中，从其炉芯侧拆下非含水层，但是留下与含有层接触的含有层和至少一层形成不含层的层 作为残余物。 在二次拆除过程中，残余物被拆除，石棉措施得到实施。

公开(公告)号：US08122811B2

公开(公告)日：2012-02-28

申请号：US12259383

申请日：2008-10-28

申请人： Satoru Takamizawa ,  Katsumi Mori ,  Atsushi Sano ,  Takafumi Naitou

发明人： Satoru Takamizawa ,  Katsumi Mori ,  Atsushi Sano ,  Takafumi Naitou

IPC分类号： F02M59/44 ,  F04B9/04

CPC分类号： F02M59/44 ,  F02M59/06 ,  F04B1/0404 ,  F04B1/0413 ,  F04B53/22

摘要： A housing has a cylinder and a compression chamber. A plunger is slidable in the cylinder and configured to pressurize fuel in the compression chamber. A cam is eccentric with respect to a shaft center axis of a camshaft and integrally rotatable with the camshaft. A sliding member is slidable around an outer circumferential periphery of the cam and configured to revolve around the shaft center axis in conjunction with rotation of the camshaft. The plunger is slidable on the sliding member and configured to convert the revolution into a linear movement. The cam and the sliding member are accommodated in the housing. The sliding member has an opening through which the outer circumferential periphery is partially exposed.

摘要翻译： 壳体具有气缸和压缩室。 柱塞可在气缸中滑动并且构造成对压缩室中的燃料加压。 凸轮相对于凸轮轴的轴中心轴是偏心的，并且与凸轮轴一体地可旋转。 滑动构件能够围绕凸轮的外圆周滑动，并被构造成与凸轮轴的旋转一起围绕轴中心轴线旋转。 柱塞可在滑动构件上滑动并且构造成将旋转转换成线性运动。 凸轮和滑动构件容纳在壳体中。 滑动构件具有外周边部分露出的开口。

公开(公告)号：US07343901B2

公开(公告)日：2008-03-18

申请号：US11329106

申请日：2006-01-11

申请人： Katsumi Mori ,  Akihiro Kuroda

发明人： Katsumi Mori ,  Akihiro Kuroda

IPC分类号： F02M33/02 ,  F02M63/00

CPC分类号： F02M37/22 ,  F02M37/0047 ,  F02M59/34 ,  F02M63/0225 ,  F02M2037/226

摘要： A fuel filter is located downstream of a feed pump to filter fuel discharged from the feed pump. An orifice is located between the fuel filter and a suction quantity control valve to restrict a flow rate of the fuel passing through the fuel filter. A positive pressure of the feed pump is applied to the fuel filter, and a passing pressure at the fuel filter increases. Even if viscosity of the fuel increases and the fuel becomes wax-like at low temperature, clogging of the fuel filter or an insufficient flow rate can be inhibited. The orifice restricts the flow rate of the fuel passing through the fuel filter. Accordingly, an increase in size of the fuel filter can be prevented even if the fuel filter is located downstream of the feed pump.

摘要翻译： 燃料过滤器位于进料泵的下游，以过滤从进料泵排出的燃料。 在燃料过滤器和抽吸量控制阀之间设有孔口，以限制通过燃料过滤器的燃料的流量。 供给泵的正压被施加到燃料过滤器，并且燃料过滤器上的通过压力增加。 即使燃料的粘度升高，燃料在低温下变为蜡状，也能够抑制燃料过滤器的堵塞或流量不足。 孔口限制通过燃料过滤器的燃料的流量。 因此，即使燃料过滤器位于供给泵的下游，也能够防止燃料过滤器的尺寸增大。

公开(公告)号：US07271490B2

公开(公告)日：2007-09-18

申请号：US10999290

申请日：2004-11-29

申请人： Katsumi Mori ,  Kei Kawahara ,  Yoshikazu Kasuya

发明人： Katsumi Mori ,  Kei Kawahara ,  Yoshikazu Kasuya

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L27/0207 ,  G06F17/5077 ,  G06F17/5081 ,  H01L21/76816 ,  H01L21/76819 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

摘要： A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.

摘要翻译： 半导体器件具有设置在与第一布线层30相同的层上的第一布线层30和多个伪布线层32。 半导体器件限定行方向，并且在沿着行方向的方向上延伸的第一虚拟线性线L 1。 行方向和第一虚拟线性线L 1限定为2-40度的角度，虚拟布线层32以位于第一假想线状线L 1上的方式配置。 半导体器件还限定垂直于行方向的列方向，以及在沿着列方向的方向上延伸的第二虚拟线性线L 2。 列方向和第二虚拟线性线L 2限定为2-40度的角度，并且虚设布线层32以位于第二虚拟线性线L 2上的方式设置。

公开(公告)号：US07007265B2

公开(公告)日：2006-02-28

申请号：US10236457

申请日：2002-09-06

申请人： Katsumi Mori

发明人： Katsumi Mori

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/5068 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for generating mask data that is used for a method of manufacturing semiconductor devices is provided. The semiconductor device includes wiring layers disposed in a specified pattern on a base and stress relieving layers disposed in a specified pattern over the base. The method for generating mask data comprises a step of forming resized patterns 130 by resizing wiring layer patterns 120 with a positive (+) resizing amount, a step of deleting, among the resized patterns 130, resized patterns having portions that mutually overlap, and a step of forming stress relieving layer patterns having a specified width outside the resized patterns.

公开(公告)号：US20050029567A1

公开(公告)日：2005-02-10

申请号：US10876560

申请日：2004-06-28

申请人： Katsumi Mori

发明人： Katsumi Mori

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/66833 ,  H01L21/28282 ,  H01L29/792

摘要： A semiconductor storage device showing a good memory characteristic, and a manufacturing method thereof, includes a semiconductor layer, a stacked body including a first insulating layer, a charge trapping layer, and a second insulating layer that are provided above the semiconductor layer, a gate electrode provided above the stacked body, a side wall insulating layer provided at the side of the gate electrode, and impurity regions and provided in the semiconductor layer. The end surface of the stacked body is positioned outside the end surface of the gate electrode.

摘要翻译： 显示良好的存储特性的半导体存储器件及其制造方法包括半导体层，设置在半导体层上方的包括第一绝缘层，电荷俘获层和第二绝缘层的层叠体，栅极 设置在层叠体的上方的电极，设置在栅极侧的侧壁绝缘层，以及设置在半导体层中的杂质区域。 层叠体的端面位于栅电极的端面的外侧。

公开(公告)号：US06780760B2

公开(公告)日：2004-08-24

申请号：US10176069

申请日：2002-06-21

申请人： Katsumi Mori

发明人： Katsumi Mori

IPC分类号： H01L214763

CPC分类号： H01L21/76804 ,  H01L21/7684

摘要： A method for manufacturing a semiconductor device that maintains good embedding property of plug metal, and expands the short margin of upper wiring layers to be connected to plugs, may include enlarging an end region 18 of a hole 12, such that embedding of a barrier metal 13 and a plug metal 14 in the hole 12 that is given a high aspect ratio is facilitated. Next, a planarization step is conducted against deposited surfaces of the plug metal 14 by a chemical mechanical polishing (CMP) process. In this step, a part of the interlayer dielectric layer 11 is removed together with an unnecessary portion of the plug metal 14 to a level where the end region (having a diameter d2) that is greater than a practical diameter d1 of the hole 12 disappears. Then, an upper wiring layer 15 is patterned, using a lithography technique, on the planarized interlayer dielectric layer 11 having an exposed portion of the plug metal 14 that has the practical diameter of the hole.

摘要翻译： 一种制造半导体器件的方法，其保持插塞金属具有良好的嵌入性能，并且扩大连接到插头的上部布线层的短边缘，可以包括扩大孔12的端部区域18，使得嵌入阻挡金属 13和孔12中的插头金属14被赋予高纵横比。 接下来，通过化学机械抛光（CMP）工艺对插塞金属14的沉积表面进行平坦化步骤。 在该步骤中，将层间电介质层11的一部分与插塞金属14的不需要部分一起去除到大于孔12的实际直径d1的端部区域（直径d2）消失的水平 。 然后，使用光刻技术将上部布线层15图案化为具有孔的实际直径的插塞金属14的露出部分的平坦化层间电介质层11。