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    Ion implanter and a method of implanting ions
    33.
    发明授权
    Ion implanter and a method of implanting ions 失效
    离子注入机和离子注入方法

    公开(公告)号：US06903349B2

    公开(公告)日：2005-06-07

    申请号：US10703164

    申请日：2003-11-07

    申请人： Robert Mitchell ,  John Gordon ,  Keith Relleen ,  Ronald F. Horner ,  Theodore H. Smick

    发明人： Robert Mitchell ,  John Gordon ,  Keith Relleen ,  Ronald F. Horner ,  Theodore H. Smick

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J2237/04735

    摘要： An ion implanter incorporates an r.f. accelerator assembly to provide ions for implant at high energies. The accelerator assembly includes electrodes mounted in the vacuum chamber so as to be movable between an operational position for generating and accelerating electric field and a non operational position within the vacuum chamber displaced clear of the beam path. An Actuator moves the electrode between the operational and non operation positions. For energy implanting, the electrodes are in the operational position and for low energy implants the actuator moves the electrodes to the non operational position clear of the beam path.

    摘要翻译： 离子注入机包含一个r.f. 加速器组件以在高能量下提供用于植入物的离子。 加速器组件包括安装在真空室中的电极，以便在用于产生和加速电场的操作位置和在离开光束路径的位置之外的真空室内的非操作位置之间可移动。 执行器在操作位置和非操作位置之间移动电极。 对于能量注入，电极处于操作位置，对于低能量注入，致动器将电极移动到远离光束路径的非操作位置。

    Ion implanter
    34.
    发明授权
    Ion implanter 有权
    离子注入机

    公开(公告)号：US06207959B1

    公开(公告)日：2001-03-27

    申请号：US09294995

    申请日：1999-04-20

    申请人： Shu Satoh ,  Theodore H. Smick

    发明人： Shu Satoh ,  Theodore H. Smick

    IPC分类号： H01J3700

    CPC分类号： H01J37/3171 ,  H01J2237/20228

    摘要： An ion implanter for sequentially processing single semiconductor wafers includes a scanning arm extending along a first axis. A wafer holder is mounted on a free end of the arm so as to be rotatable about a second axis centered on and perpendicular to the plane of the wafer. The wafer can be scanned through an ion beam by reciprocating the arm transversely of the first axis. A rotary motor is mounted in the scanning arm near the free end with its axis of rotation parallel to the first axis and perpendicular to the second axis. A right angle rotary drive connects the motor to the wafer holder. A hard stop is provided on the motor to prevent the wafer from being rotated by more than 360°. Connections to the wafer on the holder are provided by a flexible circuit coiled about the second axis. The scanning mechanism can itself be rotated about an axis parallel to the arm so as to tilt the scanning direction, the wafer holder is itself further rotatable about the arm axis relative to the scanning mechanism. This enables the wafer to be rotated to the horizontal when the mechanical scanning mechanism holds the arm with the wafer above the beam.

    摘要翻译： 用于顺序处理单个半导体晶片的离子注入机包括沿着第一轴延伸的扫描臂。 晶片保持器安装在臂的自由端上，以便围绕中心于晶片平面的第二轴可旋转。 可以通过横跨第一轴线的臂往复移动离子束来扫描晶片。 旋转马达安装在自由端附近的扫描臂中，其旋转轴线平行于第一轴线并垂直于第二轴线。 直角旋转驱动器将电机连接到晶片架。 在电机上设置了一个硬停止，以防止晶片旋转超过360°。 通过围绕第二轴线卷绕的柔性电路提供与支架上的晶片的连接。 扫描机构本身可以围绕平行于臂的轴线旋转以便使扫描方向倾斜，晶片保持器本身可相对于扫描机构围绕臂轴线进一步旋转。 这使得当机械扫描机构将晶片保持在晶片上方时，晶片能够旋转到水平线。

    Ion implantation apparatus
    36.
    发明授权
    Ion implantation apparatus 有权
    离子注入装置

    公开(公告)号：US08324599B2

    公开(公告)日：2012-12-04

    申请号：US12568923

    申请日：2009-09-29

    申请人： Theodore H. Smick ,  Joseph Daniel Gillespie

    发明人： Theodore H. Smick ,  Joseph Daniel Gillespie

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/2001

    摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

    摘要翻译： 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 每个载体上的相应的晶片提升结构可在第一和第二位置之间移动，晶片分别与散热器间隔开并与散热片热接触。 电梯结构被操作以在植入物旋转的第一和第二位置轮之间移动。 这允许通过调整晶片和散热器之间的热接触来控制植入过程中的晶片温度。

    Wafer holding pin
    37.
    发明授权
    Wafer holding pin 失效
    晶圆固定销

    公开(公告)号：US06452195B1

    公开(公告)日：2002-09-17

    申请号：US09376506

    申请日：1999-08-18

    申请人： Theodore H. Smick ,  Robert S. Andrews ,  Bernhard F. Cordts, III

    发明人： Theodore H. Smick ,  Robert S. Andrews ,  Bernhard F. Cordts, III

    IPC分类号： H01J3720

    CPC分类号： H01L21/687

    摘要： A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译： 晶片保持器组件包括第一和第二主要结构构件，第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径，用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件，用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性，而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量，以减少从晶片到引脚的电弧的可能性。

    Arc inhibiting wafer holder assembly
    38.
    发明授权
    Arc inhibiting wafer holder assembly 失效
    防弧晶片保持器组件

    公开(公告)号：US6155436A

    公开(公告)日：2000-12-05

    申请号：US376799

    申请日：1999-08-18

    申请人： Theodore H. Smick ,  Robert S. Andrews ,  Bernhard F. Cordts, III

    发明人： Theodore H. Smick ,  Robert S. Andrews ,  Bernhard F. Cordts, III

    IPC分类号： C23C14/50 ,  C23C14/56 ,  H01L21/687 ,  A47G19/08

    CPC分类号： H01L21/68707 ,  C23C14/50 ,  C23C14/564

    摘要： A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译： 晶片保持器组件包括第一和第二主要结构构件，第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径，用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件，用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性，而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量，以减少从晶片到引脚的电弧的可能性。

    ION IMPLANTATION APPARATUS
    40.
    发明申请
    ION IMPLANTATION APPARATUS 有权
    离子植入装置

    公开(公告)号：US20110073779A1

    公开(公告)日：2011-03-31

    申请号：US12568923

    申请日：2009-09-29

    申请人： Theodore H. Smick ,  Joseph Daniel Gillespie

    发明人： Theodore H. Smick ,  Joseph Daniel Gillespie

    IPC分类号： H01L21/265

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/2001

    摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

    摘要翻译： 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 每个载体上的相应的晶片提升结构可在第一和第二位置之间移动，晶片分别与散热器间隔开并与散热片热接触。 电梯结构被操作以在植入物旋转的第一和第二位置轮之间移动。 这允许通过调整晶片和散热器之间的热接触来控制植入过程中的晶片温度。