Wafer holder for simox processing
    1.
    发明授权
    Wafer holder for simox processing 失效
    晶圆支架用于simox处理

    公开(公告)号:US06423975B1

    公开(公告)日:2002-07-23

    申请号:US09376505

    申请日:1999-08-18

    IPC分类号: G21K510

    CPC分类号: H01L21/687

    摘要: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译: 晶片保持器组件包括第一和第二主要结构构件,第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径,用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件,用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性,而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量,以减少从晶片到引脚的电弧的可能性。

    Wafer holding pin
    2.
    发明授权
    Wafer holding pin 失效
    晶圆固定销

    公开(公告)号:US06452195B1

    公开(公告)日:2002-09-17

    申请号:US09376506

    申请日:1999-08-18

    IPC分类号: H01J3720

    CPC分类号: H01L21/687

    摘要: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译: 晶片保持器组件包括第一和第二主要结构构件,第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径,用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件,用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性,而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量,以减少从晶片到引脚的电弧的可能性。

    Arc inhibiting wafer holder assembly
    3.
    发明授权
    Arc inhibiting wafer holder assembly 失效
    防弧晶片保持器组件

    公开(公告)号:US6155436A

    公开(公告)日:2000-12-05

    申请号:US376799

    申请日:1999-08-18

    摘要: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译: 晶片保持器组件包括第一和第二主要结构构件,第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径,用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件,用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性,而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量,以减少从晶片到引脚的电弧的可能性。

    A D.C. Charged Particle Accelerator, A Method of Accelerating Charged Particles Using D.C. Voltages and a High Voltage Power Supply Apparatus for use Therewith
    4.
    发明申请
    A D.C. Charged Particle Accelerator, A Method of Accelerating Charged Particles Using D.C. Voltages and a High Voltage Power Supply Apparatus for use Therewith 有权
    直流电荷粒子加速器,使用直流电压加速带电粒子的方法和用于其的高压电源装置

    公开(公告)号:US20120146554A1

    公开(公告)日:2012-06-14

    申请号:US12962723

    申请日:2010-12-08

    IPC分类号: H05H7/22 H02K16/00

    摘要: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d. c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

    摘要翻译: 广告。 C。 带电粒子加速器包括通过绝缘垫片间隔开的加速器电极,其限定相邻电极对之间的加速间 单独调节的间隙电压施加在每个相邻的加速器电极对之间。 在实施例中,单独调节的间隙电压由安装在由电动机驱动的公共转子轴上的电隔离交流发电机产生。 交流发电机的交流电源输出为单独调节的d提供输入。 C。 电源产生间隙电压。 电源是电隔离的,并且具有串联连接成对的加速器电极的输出。 所描述的实施例使得能够将离子束加速到高能量和高束流,具有良好的加速器稳定性。

    Hydrogen implantation with reduced radiation
    5.
    发明授权
    Hydrogen implantation with reduced radiation 有权
    氢放电减少辐射

    公开(公告)号:US08101488B1

    公开(公告)日:2012-01-24

    申请号:US12978558

    申请日:2010-12-25

    IPC分类号: H01L21/336 H01L21/425

    摘要: Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

    摘要翻译: 本发明的实施例提供一种用于加速氢离子的系统。 保持供水的氢发生器被配置为从水的供应产生氢气流。 离子源结构被配置为从氢气流中产生多个氢离子。 加速管构造成加速多个氢离子。 水的供应与氘的同位素比值小于维也纳标准平均海水中氘的同位素比。

    ION IMPLANTATION APPARATUS AND A METHOD
    6.
    发明申请
    ION IMPLANTATION APPARATUS AND A METHOD 有权
    离子植入装置和方法

    公开(公告)号:US20100327190A1

    公开(公告)日:2010-12-30

    申请号:US12494270

    申请日:2009-06-30

    IPC分类号: H01J37/08

    摘要: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

    摘要翻译: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生,提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正,以补偿与轮轴的径向距离对晶圆部分通过带状束的速度的依赖性。

    Method of scanning a substrate in an ion implanter
    7.
    发明授权
    Method of scanning a substrate in an ion implanter 有权
    在离子注入机中扫描基板的方法

    公开(公告)号:US07582883B2

    公开(公告)日:2009-09-01

    申请号:US11652645

    申请日:2007-01-12

    IPC分类号: G21K5/10

    摘要: This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.

    摘要翻译: 本发明涉及一种通过离子注入机中的离子束扫描基底以提供基底的均匀计量的方法。 该方法包括引起衬底和离子束之间的相对运动,使得离子束通过所有衬底并且基本上围绕其中心旋转衬底,同时引起相对运动。 旋转衬底同时导致衬底和离子束之间的相对运动具有几个优点,包括避免有问题的角度影响,增加均匀性,增加生产量并允许允许更大范围的离子束分布。

    Fluid bearing vacuum seal assembly
    8.
    发明授权
    Fluid bearing vacuum seal assembly 有权
    流体轴承真空密封组件

    公开(公告)号:US06274875B1

    公开(公告)日:2001-08-14

    申请号:US09293941

    申请日:1999-04-19

    IPC分类号: H01J3720

    摘要: A fluid bearing vacuum seal assembly comprises an annular stator with first and second opposed surfaces, at least part of the first surface defining a first bearing surface. The stator also defines an aperture having a wall extending between the first and second surfaces. The assembly also comprises a rotor with first and second opposed surfaces, the second surface defining in part a second bearing surface which is supported relative to the first bearing surface in use so that the rotor is rotatable relative to the stator. A cylindrical wall projects axially from the second surface of the rotor through the aperture in the stator. An annular flange projects radially outwardly from the cylindrical wall adjacent to the second surface of the stator. At least one annular differential pumping channel is defined in each of the first and second surfaces of the stator and the wall which connects the first and second surfaces. This configuration allows the differential pumping channels to be spaced apart to a greater extent, improving the performance of the vacuum seal and allowing a better vacuum to be achieved.

    摘要翻译: 流体轴承真空密封组件包括具有第一和第二相对表面的环形定子,所述第一表面的至少一部分限定第一支承表面。 定子还限定了具有在第一和第二表面之间延伸的壁的孔。 组件还包括具有第一和第二相对表面的转子,第二表面部分地限定第二支承表面,该第二支承表面在使用中相对于第一支承表面支撑,使得转子可相对于定子旋转。 圆柱形壁从转子的第二表面通过定子中的孔轴向突出。 环形凸缘从与定子的第二表面相邻的圆柱形壁径向向外突出。 至少一个环形差动泵送通道限定在定子和连接第一和第二表面的壁的第一和第二表面中的每一个中。 这种构造允许差分泵送通道在更大程度上间隔开,从而改善了真空密封件的性能并且实现了更好的真空。

    Apparatus and method for reducing heating of a workpiece in ion implantation
    9.
    发明授权
    Apparatus and method for reducing heating of a workpiece in ion implantation 有权
    用于减少离子注入中工件加热的装置和方法

    公开(公告)号:US06268609B1

    公开(公告)日:2001-07-31

    申请号:US09293938

    申请日:1999-04-19

    IPC分类号: H01J37317

    CPC分类号: H01J37/3171

    摘要: An apparatus and method for reducing heating of a workpiece during ion implantation. The method comprises generating an ion beam for implantation of ions into a workpiece is, the workpiece having a surface defining a plane; scanning the ion beam relative to the surface of the workpiece in a first direction in the plane; repeatedly reciprocating the workpiece in a second direction transverse to the first direction to traverse to and from through the scanned ion beam; and rotating the workpiece 180 degrees about a central axis of the workpiece between each successive traverse of the wafer through the scanned ion beam, so that the wafer always presents the same leading edge to the beam on each traverse.

    摘要翻译: 一种用于在离子注入期间减少工件加热的装置和方法。 所述方法包括产生用于将离子注入工件的离子束,所述工件具有限定平面的表面; 在所述平面中沿着第一方向相对于所述工件的表面扫描所述离子束; 在横向于第一方向的第二方向上重复地使工件往复运动,以横穿扫描的离子束; 并且通过扫描的离子束在晶片的每个连续横越之间使工件围绕工件的中心轴线旋转180度,使得晶片在每个横越上总是呈现与波束相同的前缘。

    Method and apparatus for controlling a workpiece in a vacuum chamber

    公开(公告)号:US6163033A

    公开(公告)日:2000-12-19

    申请号:US272981

    申请日:1999-03-19

    摘要: An apparatus used to control a workpiece inside a vacuum chamber. The workpiece is supported on a workpiece holder in the vacuum chamber. The workpiece is isolated from the atmosphere outside of the vacuum chamber by differentially pumped vacuum seals and an integral air bearing support. The differentially pumped vacuum seals and integral air bearing support allow for multiple independent motions to be transmitted to the workpiece supported by the workpiece holder. The workpiece holder motions provided are (1) rotation about the X axis, (2) translation back and forth along the Y direction of an X-Y plane on the surface of the workpiece holder, and (3) rotation of the workpiece in the X-Y plane about its Z axis. Concentric seals, oval for the translation motion and circular for the rotational motion, are differentially pumped through common ports to provide successively decreasing pressure and gas flow in order to reduce the gas load into the vacuum vessel to a negligible rate.